JPS53138284A - Manufacture for semiconductor part - Google Patents
Manufacture for semiconductor partInfo
- Publication number
- JPS53138284A JPS53138284A JP5281977A JP5281977A JPS53138284A JP S53138284 A JPS53138284 A JP S53138284A JP 5281977 A JP5281977 A JP 5281977A JP 5281977 A JP5281977 A JP 5281977A JP S53138284 A JPS53138284 A JP S53138284A
- Authority
- JP
- Japan
- Prior art keywords
- manufacture
- semiconductor part
- window
- mask material
- manufacture process
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Semiconductor Memories (AREA)
- Read Only Memory (AREA)
Abstract
PURPOSE: To obtain a memory cell with small cell area through a simple manufacture process by injecting ions via the window of a mask material.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5281977A JPS53138284A (en) | 1977-05-09 | 1977-05-09 | Manufacture for semiconductor part |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5281977A JPS53138284A (en) | 1977-05-09 | 1977-05-09 | Manufacture for semiconductor part |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS53138284A true JPS53138284A (en) | 1978-12-02 |
Family
ID=12925440
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP5281977A Pending JPS53138284A (en) | 1977-05-09 | 1977-05-09 | Manufacture for semiconductor part |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS53138284A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5992562A (en) * | 1982-11-18 | 1984-05-28 | Matsushita Electric Ind Co Ltd | Formation of buried channel |
JPS63147316A (en) * | 1986-12-11 | 1988-06-20 | Nec Ic Microcomput Syst Ltd | Integrated circuit device |
JPH04239173A (en) * | 1991-01-14 | 1992-08-27 | Sharp Corp | Manufacture of solid-state image sensing device |
US5491105A (en) * | 1992-03-25 | 1996-02-13 | Texas Instruments Incorporated | LDMOS transistor with self-aligned source/backgate and photo-aligned gate |
-
1977
- 1977-05-09 JP JP5281977A patent/JPS53138284A/en active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5992562A (en) * | 1982-11-18 | 1984-05-28 | Matsushita Electric Ind Co Ltd | Formation of buried channel |
JPS63147316A (en) * | 1986-12-11 | 1988-06-20 | Nec Ic Microcomput Syst Ltd | Integrated circuit device |
JPH04239173A (en) * | 1991-01-14 | 1992-08-27 | Sharp Corp | Manufacture of solid-state image sensing device |
US5491105A (en) * | 1992-03-25 | 1996-02-13 | Texas Instruments Incorporated | LDMOS transistor with self-aligned source/backgate and photo-aligned gate |
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