JPS56112728A - Manufacture of exposure mask - Google Patents

Manufacture of exposure mask

Info

Publication number
JPS56112728A
JPS56112728A JP1487580A JP1487580A JPS56112728A JP S56112728 A JPS56112728 A JP S56112728A JP 1487580 A JP1487580 A JP 1487580A JP 1487580 A JP1487580 A JP 1487580A JP S56112728 A JPS56112728 A JP S56112728A
Authority
JP
Japan
Prior art keywords
membrane
pattern
ray
absorbing material
exposure mask
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1487580A
Other languages
Japanese (ja)
Inventor
Seiichi Iwamatsu
Kenichi Asanami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Original Assignee
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHIYOU LSI GIJUTSU KENKYU KUMIAI, CHO LSI GIJUTSU KENKYU KUMIAI filed Critical CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority to JP1487580A priority Critical patent/JPS56112728A/en
Publication of JPS56112728A publication Critical patent/JPS56112728A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)

Abstract

PURPOSE:To prevent the deformation of an X-ray absorber or membrane by irradiating beforehand a mask material before the pattern transfer treatment with the X-ray when the pattern is formed with the X-ray absorbing material on a thin membrane. CONSTITUTION:The membrane 2 such as, polyimide, Praylene or SiO2 is formed on an Si wafer 4, the X-ray is irradiated thereto, and the modification of the membrane 2 is saturated beforehand. The X-ray absorbing material 3 such as Au, Si or the like is then evaporated thereon, and the pattern of desired shape is formed. Further, the Si wafer is selectively etched and removed to form a frame, and the exposure mask is thus formed. Since the membrane or X-ray absorbing material does not modify at the time of transferring the pattern with the above configuration, highly precise pattern can be formed.
JP1487580A 1980-02-12 1980-02-12 Manufacture of exposure mask Pending JPS56112728A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1487580A JPS56112728A (en) 1980-02-12 1980-02-12 Manufacture of exposure mask

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1487580A JPS56112728A (en) 1980-02-12 1980-02-12 Manufacture of exposure mask

Publications (1)

Publication Number Publication Date
JPS56112728A true JPS56112728A (en) 1981-09-05

Family

ID=11873181

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1487580A Pending JPS56112728A (en) 1980-02-12 1980-02-12 Manufacture of exposure mask

Country Status (1)

Country Link
JP (1) JPS56112728A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4606803A (en) * 1983-11-02 1986-08-19 U.S. Philips Corporation Method of manufacturing a mask for the production of patterns in lacquer layers by means of X-ray lithography

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5212002A (en) * 1975-06-30 1977-01-29 Ibm Method of high aspect ratio mask
JPS53146623A (en) * 1977-05-26 1978-12-20 Nec Corp Photoetching mask

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5212002A (en) * 1975-06-30 1977-01-29 Ibm Method of high aspect ratio mask
JPS53146623A (en) * 1977-05-26 1978-12-20 Nec Corp Photoetching mask

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4606803A (en) * 1983-11-02 1986-08-19 U.S. Philips Corporation Method of manufacturing a mask for the production of patterns in lacquer layers by means of X-ray lithography

Similar Documents

Publication Publication Date Title
JPS56112728A (en) Manufacture of exposure mask
JPS5226171A (en) Mask creation method
JPS5394770A (en) Photo mask
JPS5314568A (en) Photolithography treatment system device
JPS52117558A (en) Soft x-ray exposure mask and its manufacturing method
JPS52149978A (en) Developing treatment method of photoresist film
JPS5349953A (en) Soft x-ray transcription mask
JPS5652751A (en) Photomask correcting method
JPS57103318A (en) Method for patterning
JPS5442979A (en) Electron beam exposure device
JPS5267977A (en) Micro pattern fixation method for semiconductor unit
JPS5712522A (en) Forming method of pattern
JPS53135580A (en) Electron beam exposing method
JPS5413334A (en) Exposure
JPS53114676A (en) Electron beam exposure method
JPS56110232A (en) Pattern formation with soft x-ray
JPS5295177A (en) Electronic beam mask and manufacture
JPS5655943A (en) Pattern forming method
JPS5357974A (en) Electron beam exposure method
JPS5718326A (en) Pattern formation
JPS56114942A (en) High energy beam sensitive resist material and its using method
JPS55102232A (en) Soft x-rays mask and its manufacturing method
JPS5357973A (en) Preparation of photo mask
JPS6479743A (en) Pattern forming method by dry developing
JPS5588331A (en) X-ray exposing mask