JPS55121685A - Manufacture of photovoltaic device - Google Patents
Manufacture of photovoltaic deviceInfo
- Publication number
- JPS55121685A JPS55121685A JP2892279A JP2892279A JPS55121685A JP S55121685 A JPS55121685 A JP S55121685A JP 2892279 A JP2892279 A JP 2892279A JP 2892279 A JP2892279 A JP 2892279A JP S55121685 A JPS55121685 A JP S55121685A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- film
- photovoltaic device
- forming
- light transmitting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 2
- 229910021417 amorphous silicon Inorganic materials 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 239000011521 glass Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
- H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP54028922A JPS5846074B2 (ja) | 1979-03-12 | 1979-03-12 | 光起電力装置の製造方法 |
US06/116,402 US4281208A (en) | 1979-02-09 | 1980-01-29 | Photovoltaic device and method of manufacturing thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP54028922A JPS5846074B2 (ja) | 1979-03-12 | 1979-03-12 | 光起電力装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS55121685A true JPS55121685A (en) | 1980-09-18 |
JPS5846074B2 JPS5846074B2 (ja) | 1983-10-14 |
Family
ID=12261887
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP54028922A Expired JPS5846074B2 (ja) | 1979-02-09 | 1979-03-12 | 光起電力装置の製造方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5846074B2 (ja) |
Cited By (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5790981A (en) * | 1980-11-27 | 1982-06-05 | Mitsubishi Electric Corp | Semiconductor device |
JPS57157578A (en) * | 1981-03-23 | 1982-09-29 | Sumitomo Electric Ind Ltd | Active crystalline silicon thin film photovoltaic element |
JPS5878474A (ja) * | 1981-11-05 | 1983-05-12 | Seiko Epson Corp | 薄膜太陽電池 |
JPS58111379A (ja) * | 1981-12-24 | 1983-07-02 | Seiko Epson Corp | 薄膜太陽電池 |
JPS58112375A (ja) * | 1981-12-25 | 1983-07-04 | Fuji Electric Corp Res & Dev Ltd | 光起電力装置の製造方法 |
JPS58112374A (ja) * | 1981-12-25 | 1983-07-04 | Fuji Electric Corp Res & Dev Ltd | 光起電力装置の製造方法 |
JPS5955080A (ja) * | 1982-09-22 | 1984-03-29 | Fuji Electric Corp Res & Dev Ltd | 薄膜光電変換装置 |
JPS59167071A (ja) * | 1983-03-12 | 1984-09-20 | Agency Of Ind Science & Technol | アモルフアスシリコン太陽電池 |
JPS59227173A (ja) * | 1983-06-08 | 1984-12-20 | Fuji Xerox Co Ltd | 光電変換素子およびその製造方法 |
JPS60101978A (ja) * | 1983-11-07 | 1985-06-06 | Taiyo Yuden Co Ltd | 非晶質半導体太陽電池 |
JPS61159771A (ja) * | 1985-01-07 | 1986-07-19 | Sanyo Electric Co Ltd | 光起電力装置 |
JPH06342925A (ja) * | 1993-09-22 | 1994-12-13 | Fuji Electric Co Ltd | アモルファスシリコン太陽電池の製造方法 |
JPH0758354A (ja) * | 1981-11-16 | 1995-03-03 | Univ Delaware | 薄膜光電池デバイスの製造方法 |
WO1999038216A1 (fr) * | 1998-01-22 | 1999-07-29 | Citizen Watch Co., Ltd. | Dispositif de cellule solaire et son procede de production |
JP2010225735A (ja) * | 2009-03-23 | 2010-10-07 | Mitsubishi Electric Corp | フォトセンサー及びその製造方法 |
-
1979
- 1979-03-12 JP JP54028922A patent/JPS5846074B2/ja not_active Expired
Cited By (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5790981A (en) * | 1980-11-27 | 1982-06-05 | Mitsubishi Electric Corp | Semiconductor device |
JPS57157578A (en) * | 1981-03-23 | 1982-09-29 | Sumitomo Electric Ind Ltd | Active crystalline silicon thin film photovoltaic element |
JPS6152992B2 (ja) * | 1981-03-23 | 1986-11-15 | Sumitomo Electric Industries | |
JPS5878474A (ja) * | 1981-11-05 | 1983-05-12 | Seiko Epson Corp | 薄膜太陽電池 |
JPH0758354A (ja) * | 1981-11-16 | 1995-03-03 | Univ Delaware | 薄膜光電池デバイスの製造方法 |
JPS58111379A (ja) * | 1981-12-24 | 1983-07-02 | Seiko Epson Corp | 薄膜太陽電池 |
JPS58112375A (ja) * | 1981-12-25 | 1983-07-04 | Fuji Electric Corp Res & Dev Ltd | 光起電力装置の製造方法 |
JPS58112374A (ja) * | 1981-12-25 | 1983-07-04 | Fuji Electric Corp Res & Dev Ltd | 光起電力装置の製造方法 |
JPS6246075B2 (ja) * | 1981-12-25 | 1987-09-30 | Fuji Denki Sogo Kenkyusho Kk | |
JPS6246074B2 (ja) * | 1981-12-25 | 1987-09-30 | Fuji Denki Sogo Kenkyusho Kk | |
JPS5955080A (ja) * | 1982-09-22 | 1984-03-29 | Fuji Electric Corp Res & Dev Ltd | 薄膜光電変換装置 |
JPS639756B2 (ja) * | 1982-09-22 | 1988-03-01 | Fuji Denki Sogo Kenkyusho Kk | |
JPS59167071A (ja) * | 1983-03-12 | 1984-09-20 | Agency Of Ind Science & Technol | アモルフアスシリコン太陽電池 |
JPS59227173A (ja) * | 1983-06-08 | 1984-12-20 | Fuji Xerox Co Ltd | 光電変換素子およびその製造方法 |
JPS60101978A (ja) * | 1983-11-07 | 1985-06-06 | Taiyo Yuden Co Ltd | 非晶質半導体太陽電池 |
JPS61159771A (ja) * | 1985-01-07 | 1986-07-19 | Sanyo Electric Co Ltd | 光起電力装置 |
JPH06342925A (ja) * | 1993-09-22 | 1994-12-13 | Fuji Electric Co Ltd | アモルファスシリコン太陽電池の製造方法 |
WO1999038216A1 (fr) * | 1998-01-22 | 1999-07-29 | Citizen Watch Co., Ltd. | Dispositif de cellule solaire et son procede de production |
US6333456B1 (en) | 1998-01-22 | 2001-12-25 | Citizen Watch Co., Ltd. | Solar cell device and method of producing the same |
JP2010225735A (ja) * | 2009-03-23 | 2010-10-07 | Mitsubishi Electric Corp | フォトセンサー及びその製造方法 |
Also Published As
Publication number | Publication date |
---|---|
JPS5846074B2 (ja) | 1983-10-14 |
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