KR950033523A - 투광성 전기 전도 산화막 및 이것의 형성 방법 - Google Patents

투광성 전기 전도 산화막 및 이것의 형성 방법 Download PDF

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KR950033523A
KR950033523A KR1019950005697A KR19950005697A KR950033523A KR 950033523 A KR950033523 A KR 950033523A KR 1019950005697 A KR1019950005697 A KR 1019950005697A KR 19950005697 A KR19950005697 A KR 19950005697A KR 950033523 A KR950033523 A KR 950033523A
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oxide film
gas
electrically conductive
fluorine
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KR1019950005697A
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티. 트란 낭
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캐롤린 앨리스 베이츠
미네소타 마이닝 앤드 매뉴팩츄어링 컴패니
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Publication of KR950033523A publication Critical patent/KR950033523A/ko

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Molecular Biology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Non-Insulated Conductors (AREA)
  • Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

주석과 Ⅱ족 원소를 함유한 투광성 전기 전도 산화물은 Ⅲ족 원소 및 하나 이상의 수소 또는 불소로 도핑된다. 산화물은 25~350℃온도에서의 스퍼터링에 의해 증착되거나 80~400℃온도에서의 화학적 증기 증착에 의해 증착될 수 있다.

Description

투광성 전기 전도 산화막 및 이것의 형성 방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 약400~800㎚파장 사이에서의 SnO2;Sb(A로 표시)와 ZnSnO:Al:H:F(B로 표시)의 근사 투과율을 비교하는 그래프, 제2도는 검출 장치용으로 적합한 본 발명의 실시예.

Claims (5)

  1. 주석과 Ⅱ족 원소를 함유한 투광성 전기 전도 산화막에 있어서, 상기 산화막은 Ⅲ족 원소로 도핑되고, 수소와 불소 및 이들의 혼합물로 이루어진 군에서 선택된 불순물로 도핑되는 것을 특징으로 하는 투광성 전기전도 산화막.
  2. 제1항에 있어서, 상기 Ⅲ족 원소는 알루미늄, 붕소 및 이들의 혼합물로 이루어진 군에서 선택되는 것을 특징으로 하는 투광성 전기 전도 산화막.
  3. 투광성 전기 전도 산화막을 기판상에 증착시키기 위한 방법에 있어서, 상기 증착 방법은 불활성 기체와 하나 이상의 수소 함유 기체나 불소 함유 기체를 함유한 기체 혼합물에서 타겟을 스퍼터링하여 상기 타겟에서 추출된 주석 및 상기 타겟에서 추출된 적어도 하나의 Ⅱ족 원소를 함유한 산화막을 상기 기판 상에 증칙시키는 단계를 포함하는데, 상기 산화물은 상기 타겟 및/또는 상기 기체 혼합물에서 추출된 Ⅲ족 원소로 도핑되고 수소, 불소 및 이들의 혼합물로 이루어진 군에서 선택된 상기 기체 혼합물에서 추출된 불순물로도 도핑되는 것을 특징으로 하는 투광성 전기 전도 산화막의 증착 방법.
  4. 투광성 전기 전도 산화막을 형성하는 방법에 있어서, 불활성 기체, 주석 함유 화합물, Ⅱ족 원소 화합물, 산소 함유 화합물, Ⅲ족 원소 함유 화합물 및 수소 함유 기체 및/또는 불소 함유 화합물로 이루어진 기체와 증기 혼합물을 형성하는 단계와; 상기 기체와 증기 혼합물을 가열된 기판에 노출시켜 상기 기판상에 주석과 적어도 하나의 Ⅱ족 원소를 함유한 산화막을 증착시키는 단계를 포함하는데, 상기 산화막은 수소와 불소와 이들의 혼합물로 이루어진 군에서 선택된 불순물 및 Ⅲ족 원소로 도핑되는 것을 특징으로 하는 투광성 전기 전도 산화막의 증착 형성 방법.
  5. 검출 소자에 있어서, a)전지 자기 방사선에 노출되는 동시에 전기 신호를 발생할 수 있는 에너지 감지 재료를 함유한 막과; b)상기 막의 측면과 전기 접촉하는 투광성 전기 전도층과; c)상기 투광형 전기 전도 재료와 전기 접촉하여 검출 소자를 외부 회로에 접속시키는 접속 수단을 구비하며, 상기 투광형 전기 전도층은 주석과 Ⅱ족 원소를 포함한 산화물을 함유하는데, 상기 산화물은 수소와 불소와 이들의 혼합물로 이루어진 군에서 선택된 불순물 및 Ⅲ족 원소로 도핑되는 것을 특징으로 하는 검출소자.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019950005697A 1994-03-24 1995-03-18 투광성 전기 전도 산화막 및 이것의 형성 방법 KR950033523A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/217,425 US5397920A (en) 1994-03-24 1994-03-24 Light transmissive, electrically-conductive, oxide film and methods of production
US8/217,425 1994-03-24

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US (1) US5397920A (ko)
EP (1) EP0675550A3 (ko)
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EP0675550A3 (en) 1997-09-03
EP0675550A2 (en) 1995-10-04
US5397920A (en) 1995-03-14
JPH07291628A (ja) 1995-11-07

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