JPS55117282A - 3[5 group compound semiconductor mosfet - Google Patents

3[5 group compound semiconductor mosfet

Info

Publication number
JPS55117282A
JPS55117282A JP2457379A JP2457379A JPS55117282A JP S55117282 A JPS55117282 A JP S55117282A JP 2457379 A JP2457379 A JP 2457379A JP 2457379 A JP2457379 A JP 2457379A JP S55117282 A JPS55117282 A JP S55117282A
Authority
JP
Japan
Prior art keywords
composition
forbidden band
inp
mosfet
channel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2457379A
Other languages
English (en)
Other versions
JPS6321354B2 (ja
Inventor
Takeshi Kobayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP2457379A priority Critical patent/JPS55117282A/ja
Publication of JPS55117282A publication Critical patent/JPS55117282A/ja
Publication of JPS6321354B2 publication Critical patent/JPS6321354B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)
  • Junction Field-Effect Transistors (AREA)
JP2457379A 1979-03-05 1979-03-05 3[5 group compound semiconductor mosfet Granted JPS55117282A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2457379A JPS55117282A (en) 1979-03-05 1979-03-05 3[5 group compound semiconductor mosfet

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2457379A JPS55117282A (en) 1979-03-05 1979-03-05 3[5 group compound semiconductor mosfet

Publications (2)

Publication Number Publication Date
JPS55117282A true JPS55117282A (en) 1980-09-09
JPS6321354B2 JPS6321354B2 (ja) 1988-05-06

Family

ID=12141902

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2457379A Granted JPS55117282A (en) 1979-03-05 1979-03-05 3[5 group compound semiconductor mosfet

Country Status (1)

Country Link
JP (1) JPS55117282A (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01119065A (ja) * 1987-10-30 1989-05-11 Sharp Corp ３−５族化合物半導体電界効果トランジスタ

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2505502Y2 (ja) * 1991-02-08 1996-07-31 株式会社ノダ 装飾壁

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01119065A (ja) * 1987-10-30 1989-05-11 Sharp Corp ３−５族化合物半導体電界効果トランジスタ

Also Published As

Publication number Publication date
JPS6321354B2 (ja) 1988-05-06

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