JPS55108733A - Method of manufacture of semiconductor device - Google Patents
Method of manufacture of semiconductor deviceInfo
- Publication number
- JPS55108733A JPS55108733A JP14262579A JP14262579A JPS55108733A JP S55108733 A JPS55108733 A JP S55108733A JP 14262579 A JP14262579 A JP 14262579A JP 14262579 A JP14262579 A JP 14262579A JP S55108733 A JPS55108733 A JP S55108733A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- irradiated
- substrate
- evaporation
- soldering
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE: To form easily an electrode suitable for soldering by the electron beam evaporation method and make it possible to use favorable solder bonding by means of a laminated film utilizing effectively the physical properties of Cr and Ag.
CONSTITUTION: Evaporation source vessel 1, filled with Cr, is irradiated an electron beam, and thereby a Cr evaporation layer is obtained. Next, evaporation source vessel 3, filled with Ag 4, and mounted with Cr particles 5 on the exposed Ag surface, is irradiated the beam. Under this condition when the beam output is increased from 1kW to 5kW based upon prescribed program, the layer whose composition continuously varies from a layer having a large amount of Cr to a layer having a large amount of Ag is formed on the substrate. Finally, the beam is irradiated on the surface of Ag, and thereby an Ag layer is formed. As a result, the topmost layer of this multi-metal layer film is an Ag layer, and this is most suitable for soldering. The lowest Cr layer has a strong bonding force with respect to the semiconductor substrate. Hence, the electrode does not peel off from the substrate.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14262579A JPS55108733A (en) | 1979-11-01 | 1979-11-01 | Method of manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14262579A JPS55108733A (en) | 1979-11-01 | 1979-11-01 | Method of manufacture of semiconductor device |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1345076A Division JPS5296867A (en) | 1976-02-10 | 1976-02-10 | Semiconductor unit and its manufacture |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS55108733A true JPS55108733A (en) | 1980-08-21 |
JPS5756206B2 JPS5756206B2 (en) | 1982-11-29 |
Family
ID=15319685
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14262579A Granted JPS55108733A (en) | 1979-11-01 | 1979-11-01 | Method of manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS55108733A (en) |
-
1979
- 1979-11-01 JP JP14262579A patent/JPS55108733A/en active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS5756206B2 (en) | 1982-11-29 |
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