JPS55108733A - Method of manufacture of semiconductor device - Google Patents

Method of manufacture of semiconductor device

Info

Publication number
JPS55108733A
JPS55108733A JP14262579A JP14262579A JPS55108733A JP S55108733 A JPS55108733 A JP S55108733A JP 14262579 A JP14262579 A JP 14262579A JP 14262579 A JP14262579 A JP 14262579A JP S55108733 A JPS55108733 A JP S55108733A
Authority
JP
Japan
Prior art keywords
layer
irradiated
substrate
evaporation
soldering
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14262579A
Other languages
Japanese (ja)
Other versions
JPS5756206B2 (en
Inventor
Hirotsugu Hattori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Priority to JP14262579A priority Critical patent/JPS55108733A/en
Publication of JPS55108733A publication Critical patent/JPS55108733A/en
Publication of JPS5756206B2 publication Critical patent/JPS5756206B2/ja
Granted legal-status Critical Current

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  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE: To form easily an electrode suitable for soldering by the electron beam evaporation method and make it possible to use favorable solder bonding by means of a laminated film utilizing effectively the physical properties of Cr and Ag.
CONSTITUTION: Evaporation source vessel 1, filled with Cr, is irradiated an electron beam, and thereby a Cr evaporation layer is obtained. Next, evaporation source vessel 3, filled with Ag 4, and mounted with Cr particles 5 on the exposed Ag surface, is irradiated the beam. Under this condition when the beam output is increased from 1kW to 5kW based upon prescribed program, the layer whose composition continuously varies from a layer having a large amount of Cr to a layer having a large amount of Ag is formed on the substrate. Finally, the beam is irradiated on the surface of Ag, and thereby an Ag layer is formed. As a result, the topmost layer of this multi-metal layer film is an Ag layer, and this is most suitable for soldering. The lowest Cr layer has a strong bonding force with respect to the semiconductor substrate. Hence, the electrode does not peel off from the substrate.
COPYRIGHT: (C)1980,JPO&Japio
JP14262579A 1979-11-01 1979-11-01 Method of manufacture of semiconductor device Granted JPS55108733A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14262579A JPS55108733A (en) 1979-11-01 1979-11-01 Method of manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14262579A JPS55108733A (en) 1979-11-01 1979-11-01 Method of manufacture of semiconductor device

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP1345076A Division JPS5296867A (en) 1976-02-10 1976-02-10 Semiconductor unit and its manufacture

Publications (2)

Publication Number Publication Date
JPS55108733A true JPS55108733A (en) 1980-08-21
JPS5756206B2 JPS5756206B2 (en) 1982-11-29

Family

ID=15319685

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14262579A Granted JPS55108733A (en) 1979-11-01 1979-11-01 Method of manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS55108733A (en)

Also Published As

Publication number Publication date
JPS5756206B2 (en) 1982-11-29

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