JPS5524471A - Formation of electrodes - Google Patents
Formation of electrodesInfo
- Publication number
- JPS5524471A JPS5524471A JP9731178A JP9731178A JPS5524471A JP S5524471 A JPS5524471 A JP S5524471A JP 9731178 A JP9731178 A JP 9731178A JP 9731178 A JP9731178 A JP 9731178A JP S5524471 A JPS5524471 A JP S5524471A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- weight
- heating
- substrate
- spattering method
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Conductive Materials (AREA)
- Physical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE:When forming electrodes of Al-Si by spattering method, to give the larger contents than 2.0% by weight to Al and to spatter without heating a substrate so that pattern is made fine and the life of said electrode is elngated. CONSTITUTION:When an electrode is formed of Al-Si by magnetron spattering method, a larger quantity of Si than 2.0% by weight is added to Al as one of electrode materials. The substrate on which said electrode is to be formed is treated without heating. Thereby, if 3.0% by weight of Si is contained in Al, the grain diameter of Al-Si film becomes so small as about 800Angstrom . Thus, the fine pattern obtained by chemical etching with photo-resist is suitable for LSI wiring.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9731178A JPS5524471A (en) | 1978-08-11 | 1978-08-11 | Formation of electrodes |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9731178A JPS5524471A (en) | 1978-08-11 | 1978-08-11 | Formation of electrodes |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5524471A true JPS5524471A (en) | 1980-02-21 |
Family
ID=14188935
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9731178A Pending JPS5524471A (en) | 1978-08-11 | 1978-08-11 | Formation of electrodes |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5524471A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62211936A (en) * | 1986-03-12 | 1987-09-17 | Fujitsu Ltd | Formation of interconnection layer |
JPS6461935A (en) * | 1987-09-02 | 1989-03-08 | Mitsubishi Electric Corp | Semiconductor device |
JPH0216735A (en) * | 1988-05-02 | 1990-01-19 | Motorola Inc | Metallization process of semiconductor device |
-
1978
- 1978-08-11 JP JP9731178A patent/JPS5524471A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62211936A (en) * | 1986-03-12 | 1987-09-17 | Fujitsu Ltd | Formation of interconnection layer |
JPS6461935A (en) * | 1987-09-02 | 1989-03-08 | Mitsubishi Electric Corp | Semiconductor device |
JPH0216735A (en) * | 1988-05-02 | 1990-01-19 | Motorola Inc | Metallization process of semiconductor device |
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