JPS55105324A - Manufacturing method and apparatus of semiconductor device - Google Patents

Manufacturing method and apparatus of semiconductor device

Info

Publication number
JPS55105324A
JPS55105324A JP1245979A JP1245979A JPS55105324A JP S55105324 A JPS55105324 A JP S55105324A JP 1245979 A JP1245979 A JP 1245979A JP 1245979 A JP1245979 A JP 1245979A JP S55105324 A JPS55105324 A JP S55105324A
Authority
JP
Japan
Prior art keywords
region
impurity
substrate
invading
injected
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1245979A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6142850B2 (enExample
Inventor
Junichi Nishizawa
Keishiro Takahashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Research Foundation
Original Assignee
Semiconductor Research Foundation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Research Foundation filed Critical Semiconductor Research Foundation
Priority to JP1245979A priority Critical patent/JPS55105324A/ja
Publication of JPS55105324A publication Critical patent/JPS55105324A/ja
Publication of JPS6142850B2 publication Critical patent/JPS6142850B2/ja
Granted legal-status Critical Current

Links

JP1245979A 1979-02-05 1979-02-05 Manufacturing method and apparatus of semiconductor device Granted JPS55105324A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1245979A JPS55105324A (en) 1979-02-05 1979-02-05 Manufacturing method and apparatus of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1245979A JPS55105324A (en) 1979-02-05 1979-02-05 Manufacturing method and apparatus of semiconductor device

Publications (2)

Publication Number Publication Date
JPS55105324A true JPS55105324A (en) 1980-08-12
JPS6142850B2 JPS6142850B2 (enExample) 1986-09-24

Family

ID=11805923

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1245979A Granted JPS55105324A (en) 1979-02-05 1979-02-05 Manufacturing method and apparatus of semiconductor device

Country Status (1)

Country Link
JP (1) JPS55105324A (enExample)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0059264A1 (en) * 1981-03-02 1982-09-08 Rockwell International Corporation NPN Type lateral transistor with minimal substrate operation interference and method for producing same
JPS61121470A (ja) * 1984-11-19 1986-06-09 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
JPS61202426A (ja) * 1985-03-05 1986-09-08 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
JPS6276147A (ja) * 1985-09-28 1987-04-08 Nec Kansai Ltd イオン注入装置
JPS62115638A (ja) * 1985-11-14 1987-05-27 Nissin Electric Co Ltd イオン注入装置
JPS62222558A (ja) * 1986-03-22 1987-09-30 Nissin Electric Co Ltd イオン処理装置
JPS62281248A (ja) * 1986-05-28 1987-12-07 Tokyo Electron Ltd イオン注入方法
JPS62285355A (ja) * 1986-06-03 1987-12-11 Mitsubishi Electric Corp イオン注入装置
JPS62291955A (ja) * 1986-06-12 1987-12-18 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
US5112762A (en) * 1990-12-05 1992-05-12 Anderson Dirk N High angle implant around top of trench to reduce gated diode leakage
US5183768A (en) * 1989-04-04 1993-02-02 Matsushita Electric Industrial Co., Ltd. Method of fabricating semiconductor device by forming doped regions that limit width of the base

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0059264A1 (en) * 1981-03-02 1982-09-08 Rockwell International Corporation NPN Type lateral transistor with minimal substrate operation interference and method for producing same
JPS61121470A (ja) * 1984-11-19 1986-06-09 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
JPS61202426A (ja) * 1985-03-05 1986-09-08 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
JPS6276147A (ja) * 1985-09-28 1987-04-08 Nec Kansai Ltd イオン注入装置
JPS62115638A (ja) * 1985-11-14 1987-05-27 Nissin Electric Co Ltd イオン注入装置
JPS62222558A (ja) * 1986-03-22 1987-09-30 Nissin Electric Co Ltd イオン処理装置
JPS62281248A (ja) * 1986-05-28 1987-12-07 Tokyo Electron Ltd イオン注入方法
JPS62285355A (ja) * 1986-06-03 1987-12-11 Mitsubishi Electric Corp イオン注入装置
JPS62291955A (ja) * 1986-06-12 1987-12-18 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
US5183768A (en) * 1989-04-04 1993-02-02 Matsushita Electric Industrial Co., Ltd. Method of fabricating semiconductor device by forming doped regions that limit width of the base
US5112762A (en) * 1990-12-05 1992-05-12 Anderson Dirk N High angle implant around top of trench to reduce gated diode leakage

Also Published As

Publication number Publication date
JPS6142850B2 (enExample) 1986-09-24

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