JPS55105324A - Manufacturing method and apparatus of semiconductor device - Google Patents

Manufacturing method and apparatus of semiconductor device

Info

Publication number
JPS55105324A
JPS55105324A JP1245979A JP1245979A JPS55105324A JP S55105324 A JPS55105324 A JP S55105324A JP 1245979 A JP1245979 A JP 1245979A JP 1245979 A JP1245979 A JP 1245979A JP S55105324 A JPS55105324 A JP S55105324A
Authority
JP
Japan
Prior art keywords
region
impurity
substrate
invading
injected
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1245979A
Other languages
Japanese (ja)
Other versions
JPS6142850B2 (en
Inventor
Junichi Nishizawa
Keishiro Takahashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Research Foundation
Original Assignee
Semiconductor Research Foundation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Research Foundation filed Critical Semiconductor Research Foundation
Priority to JP1245979A priority Critical patent/JPS55105324A/en
Publication of JPS55105324A publication Critical patent/JPS55105324A/en
Publication of JPS6142850B2 publication Critical patent/JPS6142850B2/ja
Granted legal-status Critical Current

Links

Abstract

PURPOSE: To facilitate the formation of the region such as buried region by a method wherein the impurity region is formed beneath the region which has no impurity by injecting high energy impurity particle in the skew direction to the surface of semiconductor.
CONSTITUTION: The mask 2 which has the opening 3 on the substrate 1 is disposed and the impurity ion is injected from the arrowed direction which has the angle θ referred to normal direction of the substrate and the impurity region 15 which has invading length l depth d that is lcosθ is formed. Thus the tip of region 15 situates beneath the others. When the same process is performed from the reverse direction the invading region 16 of the same type is obtained, and the injected region which has pointed parts at both side is possible. Furthermore disposing V or U-shaped hole on the substrate 1 at the opening 3, the area 15 and 16 on the wall of the hole is possible by the same process. By this method injection of impurity to the expected area in the substrate is made to be remoarkably facile.
COPYRIGHT: (C)1980,JPO&Japio
JP1245979A 1979-02-05 1979-02-05 Manufacturing method and apparatus of semiconductor device Granted JPS55105324A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1245979A JPS55105324A (en) 1979-02-05 1979-02-05 Manufacturing method and apparatus of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1245979A JPS55105324A (en) 1979-02-05 1979-02-05 Manufacturing method and apparatus of semiconductor device

Publications (2)

Publication Number Publication Date
JPS55105324A true JPS55105324A (en) 1980-08-12
JPS6142850B2 JPS6142850B2 (en) 1986-09-24

Family

ID=11805923

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1245979A Granted JPS55105324A (en) 1979-02-05 1979-02-05 Manufacturing method and apparatus of semiconductor device

Country Status (1)

Country Link
JP (1) JPS55105324A (en)

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0055411A2 (en) * 1980-12-29 1982-07-07 Rockwell International Corporation Extremely small area NPN lateral transistor and method
EP0059264A1 (en) * 1981-03-02 1982-09-08 Rockwell International Corporation NPN Type lateral transistor with minimal substrate operation interference and method for producing same
JPS61121470A (en) * 1984-11-19 1986-06-09 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device
JPS61202426A (en) * 1985-03-05 1986-09-08 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device
JPS6276147A (en) * 1985-09-28 1987-04-08 Nec Kansai Ltd Ion implanting apparatus
JPS62115638A (en) * 1985-11-14 1987-05-27 Nissin Electric Co Ltd Ion implanting apparatus
JPS62222558A (en) * 1986-03-22 1987-09-30 Nissin Electric Co Ltd Ion processing device
JPS62281248A (en) * 1986-05-28 1987-12-07 Tokyo Electron Ltd Ion implantation method
JPS62285355A (en) * 1986-06-03 1987-12-11 Mitsubishi Electric Corp Ion implanter
JPS62291955A (en) * 1986-06-12 1987-12-18 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device
US5112762A (en) * 1990-12-05 1992-05-12 Anderson Dirk N High angle implant around top of trench to reduce gated diode leakage
US5183768A (en) * 1989-04-04 1993-02-02 Matsushita Electric Industrial Co., Ltd. Method of fabricating semiconductor device by forming doped regions that limit width of the base

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0055411A2 (en) * 1980-12-29 1982-07-07 Rockwell International Corporation Extremely small area NPN lateral transistor and method
EP0059264A1 (en) * 1981-03-02 1982-09-08 Rockwell International Corporation NPN Type lateral transistor with minimal substrate operation interference and method for producing same
JPS61121470A (en) * 1984-11-19 1986-06-09 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device
JPH0571128B2 (en) * 1985-03-05 1993-10-06 Matsushita Electric Ind Co Ltd
JPS61202426A (en) * 1985-03-05 1986-09-08 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device
JPS6276147A (en) * 1985-09-28 1987-04-08 Nec Kansai Ltd Ion implanting apparatus
JPS62115638A (en) * 1985-11-14 1987-05-27 Nissin Electric Co Ltd Ion implanting apparatus
JPS62222558A (en) * 1986-03-22 1987-09-30 Nissin Electric Co Ltd Ion processing device
JPS62281248A (en) * 1986-05-28 1987-12-07 Tokyo Electron Ltd Ion implantation method
JPS62285355A (en) * 1986-06-03 1987-12-11 Mitsubishi Electric Corp Ion implanter
JPS62291955A (en) * 1986-06-12 1987-12-18 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device
US5183768A (en) * 1989-04-04 1993-02-02 Matsushita Electric Industrial Co., Ltd. Method of fabricating semiconductor device by forming doped regions that limit width of the base
US5112762A (en) * 1990-12-05 1992-05-12 Anderson Dirk N High angle implant around top of trench to reduce gated diode leakage

Also Published As

Publication number Publication date
JPS6142850B2 (en) 1986-09-24

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