JPS6142850B2 - - Google Patents
Info
- Publication number
- JPS6142850B2 JPS6142850B2 JP54012459A JP1245979A JPS6142850B2 JP S6142850 B2 JPS6142850 B2 JP S6142850B2 JP 54012459 A JP54012459 A JP 54012459A JP 1245979 A JP1245979 A JP 1245979A JP S6142850 B2 JPS6142850 B2 JP S6142850B2
- Authority
- JP
- Japan
- Prior art keywords
- region
- mask
- gate
- ion implantation
- impurity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000000034 method Methods 0.000 claims description 34
- 239000004065 semiconductor Substances 0.000 claims description 32
- 239000012535 impurity Substances 0.000 claims description 20
- 150000002500 ions Chemical class 0.000 claims description 18
- 238000004519 manufacturing process Methods 0.000 claims description 13
- 238000005468 ion implantation Methods 0.000 description 29
- 239000002245 particle Substances 0.000 description 10
- 239000000758 substrate Substances 0.000 description 10
- 238000010884 ion-beam technique Methods 0.000 description 9
- 229910004298 SiO 2 Inorganic materials 0.000 description 8
- 239000007787 solid Substances 0.000 description 8
- 238000005530 etching Methods 0.000 description 7
- 238000009792 diffusion process Methods 0.000 description 6
- 230000006698 induction Effects 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 230000008569 process Effects 0.000 description 5
- 230000003068 static effect Effects 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000001133 acceleration Effects 0.000 description 3
- 238000002513 implantation Methods 0.000 description 3
- 239000012212 insulator Substances 0.000 description 3
- 230000035515 penetration Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 238000002048 anodisation reaction Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 150000003377 silicon compounds Chemical class 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000010408 sweeping Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1245979A JPS55105324A (en) | 1979-02-05 | 1979-02-05 | Manufacturing method and apparatus of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1245979A JPS55105324A (en) | 1979-02-05 | 1979-02-05 | Manufacturing method and apparatus of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS55105324A JPS55105324A (en) | 1980-08-12 |
| JPS6142850B2 true JPS6142850B2 (enExample) | 1986-09-24 |
Family
ID=11805923
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1245979A Granted JPS55105324A (en) | 1979-02-05 | 1979-02-05 | Manufacturing method and apparatus of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS55105324A (enExample) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0059264A1 (en) * | 1981-03-02 | 1982-09-08 | Rockwell International Corporation | NPN Type lateral transistor with minimal substrate operation interference and method for producing same |
| JPS61121470A (ja) * | 1984-11-19 | 1986-06-09 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法 |
| JPS61202426A (ja) * | 1985-03-05 | 1986-09-08 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法 |
| JPS6276147A (ja) * | 1985-09-28 | 1987-04-08 | Nec Kansai Ltd | イオン注入装置 |
| JPS62115638A (ja) * | 1985-11-14 | 1987-05-27 | Nissin Electric Co Ltd | イオン注入装置 |
| JPH0793122B2 (ja) * | 1986-03-22 | 1995-10-09 | 日新電機株式会社 | イオン処理装置 |
| JPH0834093B2 (ja) * | 1986-05-28 | 1996-03-29 | 東京エレクトロン株式会社 | イオン注入方法 |
| JPS62285355A (ja) * | 1986-06-03 | 1987-12-11 | Mitsubishi Electric Corp | イオン注入装置 |
| JPS62291955A (ja) * | 1986-06-12 | 1987-12-18 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法 |
| US5183768A (en) * | 1989-04-04 | 1993-02-02 | Matsushita Electric Industrial Co., Ltd. | Method of fabricating semiconductor device by forming doped regions that limit width of the base |
| US5112762A (en) * | 1990-12-05 | 1992-05-12 | Anderson Dirk N | High angle implant around top of trench to reduce gated diode leakage |
-
1979
- 1979-02-05 JP JP1245979A patent/JPS55105324A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS55105324A (en) | 1980-08-12 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5158903A (en) | Method for producing a field-effect type semiconductor device | |
| US4925805A (en) | Method of manufacturing a semiconductor device having an SOI structure using selectable etching | |
| US4442589A (en) | Method for manufacturing field effect transistors | |
| USRE37228E1 (en) | Method of fabricating semiconductor device | |
| JPH0130312B2 (enExample) | ||
| US6150693A (en) | Short channel non-self aligned VMOS field effect transistor | |
| US4497107A (en) | Method of making self-aligned high-frequency static induction transistor | |
| JPS6142850B2 (enExample) | ||
| US20200303517A1 (en) | Process method and structure for high voltage mosfets | |
| JPH0571134B2 (enExample) | ||
| US6593175B2 (en) | Method of controlling a shape of an oxide layer formed on a substrate | |
| US4037307A (en) | Methods for making transistor structures | |
| JPH05251709A (ja) | ソース・ベース間短絡部を有する電力用ｍｏｓ−ｆｅｔおよびその製造方法 | |
| US4261761A (en) | Method of manufacturing sub-micron channel width MOS transistor | |
| US4217599A (en) | Narrow channel MOS devices and method of manufacturing | |
| US9748364B2 (en) | Method for fabricating three dimensional device | |
| KR20020010918A (ko) | 이중 게이트 모스펫 트랜지스터 및 그 제조 방법 | |
| JP2904090B2 (ja) | 単一電子素子 | |
| US20070075342A1 (en) | Semiconductor device with fin structure and method of manufacturing the same | |
| EP0201713A1 (en) | Method of making a FET gate by angled evaporation | |
| US4468682A (en) | Self-aligned high-frequency static induction transistor | |
| JP2001036071A (ja) | 半導体装置の製造方法 | |
| US10381465B2 (en) | Method for fabricating asymmetrical three dimensional device | |
| JPS6126264A (ja) | 半導体装置の製造方法 | |
| JPS59119870A (ja) | 半導体装置の製造方法 |