JPS5474677A - Surface stabilizing method of semiconcuctor element using polyimide silicone - Google Patents

Surface stabilizing method of semiconcuctor element using polyimide silicone

Info

Publication number
JPS5474677A
JPS5474677A JP14162577A JP14162577A JPS5474677A JP S5474677 A JPS5474677 A JP S5474677A JP 14162577 A JP14162577 A JP 14162577A JP 14162577 A JP14162577 A JP 14162577A JP S5474677 A JPS5474677 A JP S5474677A
Authority
JP
Japan
Prior art keywords
polyimide silicone
film
coated
minutes
hours
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14162577A
Other languages
Japanese (ja)
Other versions
JPS616540B2 (en
Inventor
Takashi Yokoyama
Hiroshi Suzuki
Hideyuki Yagi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP14162577A priority Critical patent/JPS5474677A/en
Publication of JPS5474677A publication Critical patent/JPS5474677A/en
Publication of JPS616540B2 publication Critical patent/JPS616540B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Thyristors (AREA)
  • Formation Of Insulating Films (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

PURPOSE: To make stable the surface of element, by convertging the semiconductor element into polyimide silicone resin, through the coating of organic solvent solution of the copolymer of polyamidic acid-polyamidic acid siloxan on the surface of semiconductor element.
CONSTITUTION: The exposed surface J of the PN junction of the element consisting of the semiconductor substrate 1, electrode 2, and support electrode 3 is etched with etching solution of fluoric acid geoup, and it is dried in nitrogen after water cleaning and dewatering with acetone. Next, varnish is coated on the exposed surface J, and it is heated in dried nitrogen at 140°C for 30 minuted, at 180°C for 60 minutes, and at 225°C for 5 hours and further, at 250°c for 5 minutes, forming the passivation film consisting of the polyimide silicone resin film 6 μm in average thickness. After that, the silicone of additinal type is coated on the film for discharge-proof and it is heated at 150°c for 4 hours, forming the protective film.
COPYRIGHT: (C)1979,JPO&Japio
JP14162577A 1977-11-28 1977-11-28 Surface stabilizing method of semiconcuctor element using polyimide silicone Granted JPS5474677A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14162577A JPS5474677A (en) 1977-11-28 1977-11-28 Surface stabilizing method of semiconcuctor element using polyimide silicone

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14162577A JPS5474677A (en) 1977-11-28 1977-11-28 Surface stabilizing method of semiconcuctor element using polyimide silicone

Publications (2)

Publication Number Publication Date
JPS5474677A true JPS5474677A (en) 1979-06-14
JPS616540B2 JPS616540B2 (en) 1986-02-27

Family

ID=15296381

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14162577A Granted JPS5474677A (en) 1977-11-28 1977-11-28 Surface stabilizing method of semiconcuctor element using polyimide silicone

Country Status (1)

Country Link
JP (1) JPS5474677A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59113035A (en) * 1983-12-05 1984-06-29 Nitto Electric Ind Co Ltd Method for forming polyimide layer having improved adhesive property on ground surface consisting of material containing silicon
US5094919A (en) * 1988-06-30 1992-03-10 Nippon Steel Chemical Co., Ltd. Polyimide copolymers and process for preparing the same
JP2014192500A (en) * 2013-03-28 2014-10-06 Shindengen Electric Mfg Co Ltd Method of manufacturing mesa type semiconductor device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5213774A (en) * 1975-07-23 1977-02-02 Nippon Gakki Seizo Kk Production method of semiconductor device
JPS5276878A (en) * 1975-12-18 1977-06-28 Gen Electric Polyamide siloxane copolymerization protection cover film for semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5213774A (en) * 1975-07-23 1977-02-02 Nippon Gakki Seizo Kk Production method of semiconductor device
JPS5276878A (en) * 1975-12-18 1977-06-28 Gen Electric Polyamide siloxane copolymerization protection cover film for semiconductor device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59113035A (en) * 1983-12-05 1984-06-29 Nitto Electric Ind Co Ltd Method for forming polyimide layer having improved adhesive property on ground surface consisting of material containing silicon
JPH0129370B2 (en) * 1983-12-05 1989-06-09 Nitsuto Denko Kk
US5094919A (en) * 1988-06-30 1992-03-10 Nippon Steel Chemical Co., Ltd. Polyimide copolymers and process for preparing the same
JP2014192500A (en) * 2013-03-28 2014-10-06 Shindengen Electric Mfg Co Ltd Method of manufacturing mesa type semiconductor device

Also Published As

Publication number Publication date
JPS616540B2 (en) 1986-02-27

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