JPS5467392A - Composite semiconductor device - Google Patents

Composite semiconductor device

Info

Publication number
JPS5467392A
JPS5467392A JP13449177A JP13449177A JPS5467392A JP S5467392 A JPS5467392 A JP S5467392A JP 13449177 A JP13449177 A JP 13449177A JP 13449177 A JP13449177 A JP 13449177A JP S5467392 A JPS5467392 A JP S5467392A
Authority
JP
Japan
Prior art keywords
laser
gain
injected
electrode
loss
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13449177A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6159555B2 (enrdf_load_stackoverflow
Inventor
Kuniaki Iwamoto
Isao Hino
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP13449177A priority Critical patent/JPS5467392A/ja
Publication of JPS5467392A publication Critical patent/JPS5467392A/ja
Publication of JPS6159555B2 publication Critical patent/JPS6159555B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06209—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in single-section lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06233—Controlling other output parameters than intensity or frequency
    • H01S5/06243—Controlling other output parameters than intensity or frequency controlling the position or direction of the emitted beam

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
JP13449177A 1977-11-08 1977-11-08 Composite semiconductor device Granted JPS5467392A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13449177A JPS5467392A (en) 1977-11-08 1977-11-08 Composite semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13449177A JPS5467392A (en) 1977-11-08 1977-11-08 Composite semiconductor device

Publications (2)

Publication Number Publication Date
JPS5467392A true JPS5467392A (en) 1979-05-30
JPS6159555B2 JPS6159555B2 (enrdf_load_stackoverflow) 1986-12-17

Family

ID=15129554

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13449177A Granted JPS5467392A (en) 1977-11-08 1977-11-08 Composite semiconductor device

Country Status (1)

Country Link
JP (1) JPS5467392A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5726597U (enrdf_load_stackoverflow) * 1980-07-18 1982-02-12
JPS5727086A (en) * 1980-07-25 1982-02-13 Toshiba Corp Wavelength controlled laser wherein wave guide and grating lens are applied
JPS61159785A (ja) * 1985-01-08 1986-07-19 Canon Inc 半導体装置

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5726597U (enrdf_load_stackoverflow) * 1980-07-18 1982-02-12
JPS5727086A (en) * 1980-07-25 1982-02-13 Toshiba Corp Wavelength controlled laser wherein wave guide and grating lens are applied
JPS61159785A (ja) * 1985-01-08 1986-07-19 Canon Inc 半導体装置

Also Published As

Publication number Publication date
JPS6159555B2 (enrdf_load_stackoverflow) 1986-12-17

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