JPS5671989A - Preparation method of semiconductor laser - Google Patents

Preparation method of semiconductor laser

Info

Publication number
JPS5671989A
JPS5671989A JP14908579A JP14908579A JPS5671989A JP S5671989 A JPS5671989 A JP S5671989A JP 14908579 A JP14908579 A JP 14908579A JP 14908579 A JP14908579 A JP 14908579A JP S5671989 A JPS5671989 A JP S5671989A
Authority
JP
Japan
Prior art keywords
groove
area
band
approximately
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14908579A
Other languages
Japanese (ja)
Other versions
JPS5914914B2 (en
Inventor
Hirobumi Namisaki
Kenji Ikeda
Hisao Kumabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP54149085A priority Critical patent/JPS5914914B2/en
Publication of JPS5671989A publication Critical patent/JPS5671989A/en
Publication of JPS5914914B2 publication Critical patent/JPS5914914B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
    • H01S5/0202—Cleaving

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Weting (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Dicing (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To accurately arrange a resonator length and to obtain a good cleavage plane by a method wherein a broken line type etching groove is formed in crossing a band like operational area and in avoiding a part of this band like area, and a crystal is cleaved along this groove. CONSTITUTION:A V groove 10 is formed on a main plane wherein a stripe electrode of a wafer 1 is formed. At this time, this groove 10 is formed in a broken line type crossing the electrode 2 positioned at the upper part of a band like operational area 4 and avoiding the peripheral area of the electrode 2. When a cleavage is performed along the groove 10 of the wafer 1 like this, even if the direction of the groove 10 is slightly out of a crystal azimuth, a step difference occurs only a lower part of the groove 10 and does not occur in an area 4 contributing to a laser oscillation. And since the width of a stripe is ordinarily 20mum or less, if the groove 10 is separated with a spacing of approximately 50mum, the influence of a step difference does not appear in the operational area. Whereas, the width of an ordinary element is approximately 300mum, as a result, even if there is no groove 10 of approximately 50mum, there occurs no fault for cleavage.
JP54149085A 1979-11-15 1979-11-15 Manufacturing method of semiconductor laser Expired JPS5914914B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP54149085A JPS5914914B2 (en) 1979-11-15 1979-11-15 Manufacturing method of semiconductor laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP54149085A JPS5914914B2 (en) 1979-11-15 1979-11-15 Manufacturing method of semiconductor laser

Publications (2)

Publication Number Publication Date
JPS5671989A true JPS5671989A (en) 1981-06-15
JPS5914914B2 JPS5914914B2 (en) 1984-04-06

Family

ID=15467363

Family Applications (1)

Application Number Title Priority Date Filing Date
JP54149085A Expired JPS5914914B2 (en) 1979-11-15 1979-11-15 Manufacturing method of semiconductor laser

Country Status (1)

Country Link
JP (1) JPS5914914B2 (en)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58139487A (en) * 1982-02-15 1983-08-18 Nec Corp Manufacture of semiconductor laser
JPS62190892A (en) * 1986-02-18 1987-08-21 Matsushita Electric Ind Co Ltd Manufacture of semiconductor laser
JPH04262589A (en) * 1991-02-15 1992-09-17 Nec Kagoshima Ltd Manufacture of optical semiconductor device
EP0800244A2 (en) * 1996-04-04 1997-10-08 Lucent Technologies Inc. Method of making III/V semiconductor lasers
EP0977276A1 (en) * 1998-07-08 2000-02-02 Hewlett-Packard Company Semiconductor device cleave initiation
JP2007329459A (en) * 2006-05-11 2007-12-20 Nichia Chem Ind Ltd Nitride semiconductor laser element, and method for manufacturing same
JP2008060478A (en) * 2006-09-01 2008-03-13 Matsushita Electric Ind Co Ltd Semiconductor laser device, and its manufacturing method
JP2009105466A (en) * 2009-02-16 2009-05-14 Sharp Corp Nitride semiconductor wafer, and method for manufacturing of nitride semiconductor element
KR100957437B1 (en) * 2007-12-17 2010-05-11 삼성엘이디 주식회사 Seperating method of semiconductor laser diode

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58139487A (en) * 1982-02-15 1983-08-18 Nec Corp Manufacture of semiconductor laser
JPS62190892A (en) * 1986-02-18 1987-08-21 Matsushita Electric Ind Co Ltd Manufacture of semiconductor laser
JPH04262589A (en) * 1991-02-15 1992-09-17 Nec Kagoshima Ltd Manufacture of optical semiconductor device
EP0800244A2 (en) * 1996-04-04 1997-10-08 Lucent Technologies Inc. Method of making III/V semiconductor lasers
JPH1027942A (en) * 1996-04-04 1998-01-27 Lucent Technol Inc Method of making iii/v semiconductor laser
EP0800244A3 (en) * 1996-04-04 1998-04-15 Lucent Technologies Inc. Method of making III/V semiconductor lasers
EP0977276A1 (en) * 1998-07-08 2000-02-02 Hewlett-Packard Company Semiconductor device cleave initiation
US6335559B1 (en) 1998-07-08 2002-01-01 Hewlett-Packard Company Semiconductor device cleave initiation
JP2007329459A (en) * 2006-05-11 2007-12-20 Nichia Chem Ind Ltd Nitride semiconductor laser element, and method for manufacturing same
JP2008060478A (en) * 2006-09-01 2008-03-13 Matsushita Electric Ind Co Ltd Semiconductor laser device, and its manufacturing method
US7924897B2 (en) 2006-09-01 2011-04-12 Panasonic Corporation Semiconductor laser device
KR100957437B1 (en) * 2007-12-17 2010-05-11 삼성엘이디 주식회사 Seperating method of semiconductor laser diode
JP2009105466A (en) * 2009-02-16 2009-05-14 Sharp Corp Nitride semiconductor wafer, and method for manufacturing of nitride semiconductor element

Also Published As

Publication number Publication date
JPS5914914B2 (en) 1984-04-06

Similar Documents

Publication Publication Date Title
JPS5640291A (en) Preparation of semiconductor laser element
JPS5671989A (en) Preparation method of semiconductor laser
JPS5681994A (en) Field effect type semiconductor laser and manufacture thereof
JPS57130490A (en) Semiconductor laser device
JPS5783082A (en) Two wave length semiconductor laser device
JPS57211791A (en) Semiconductor laser element
JPS57162382A (en) Semiconductor laser
JPS56112782A (en) Semiconductor laser
JPS5763885A (en) Semiconductor laser device
JPS5691490A (en) Semiconductor laser element
JPS5467392A (en) Composite semiconductor device
JPS6453487A (en) Semiconductor laser device
JPS5712587A (en) Hetero-structure semiconductor laser
JPS57164591A (en) Photosemiconductor device
JPS6455891A (en) Jig for forming end surface protecting film of semiconductor laser
JPS56161685A (en) Manufacture of semiconductor laser
JPS5712590A (en) Buried type double heterojunction laser element
JPS5736887A (en) Semiconductor laser
JPS6428884A (en) Semiconductor laser
JPS5762586A (en) Semiconductor laser
JPS6478011A (en) Manufacture of piezoelectric component
JPS5624995A (en) Manufacture of semiconductor laser
JPS55153388A (en) Semiconductor laser device for oscillating multiple wavelength
JPS56130944A (en) Diamond cutter
JPS5617094A (en) Semiconductor laser