JPS5448169A - Forming method for silicon oxide insulating film - Google Patents

Forming method for silicon oxide insulating film

Info

Publication number
JPS5448169A
JPS5448169A JP11537877A JP11537877A JPS5448169A JP S5448169 A JPS5448169 A JP S5448169A JP 11537877 A JP11537877 A JP 11537877A JP 11537877 A JP11537877 A JP 11537877A JP S5448169 A JPS5448169 A JP S5448169A
Authority
JP
Japan
Prior art keywords
region
insulating film
porous
sio
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11537877A
Other languages
Japanese (ja)
Inventor
Hiroyoshi Matsumoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP11537877A priority Critical patent/JPS5448169A/en
Publication of JPS5448169A publication Critical patent/JPS5448169A/en
Pending legal-status Critical Current

Links

Landscapes

  • Local Oxidation Of Silicon (AREA)
  • Bipolar Transistors (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE: To realize a forming method for SiO2 insulating film which is suited for the mass production system, by dissolving the reliability problem relating the porous SiO2 insulating film.
CONSTITUTION: The IV-type semiconductor layer 2 is epitaxial-grown on one main surface of P-type semiconductor substrate 1 containing the N+-buried layer. Then P-type impurities are added selectively to the area corresponding to the element isolating region via a mask of the inactive material against the high-temperature oxidizing atmosphere, and this area is altered to P+-region 4 up to the depth reaching substrate 1. Region 4 is then soaked into the high-temperature hydrofluoric acid water solution, and substrate 1 is combined to the anode to carry out an anode formation process. Thus, region 4 is changed to porous Si region 5. After this, a selective high-temperature oxidizing process is given, with mask 3 used in the porous region forming process left as it is. As a result, minute SiO2 film 7 is through the heat oxidation at the circumference of porous Sioxide film 6, thus ensuring an easy formation of the silicon oxide insulating film of about 0.5μ which is free from pinholes
COPYRIGHT: (C)1979,JPO&Japio
JP11537877A 1977-09-24 1977-09-24 Forming method for silicon oxide insulating film Pending JPS5448169A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11537877A JPS5448169A (en) 1977-09-24 1977-09-24 Forming method for silicon oxide insulating film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11537877A JPS5448169A (en) 1977-09-24 1977-09-24 Forming method for silicon oxide insulating film

Publications (1)

Publication Number Publication Date
JPS5448169A true JPS5448169A (en) 1979-04-16

Family

ID=14661037

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11537877A Pending JPS5448169A (en) 1977-09-24 1977-09-24 Forming method for silicon oxide insulating film

Country Status (1)

Country Link
JP (1) JPS5448169A (en)

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