JPS5543814A - Bipolar semiconductor device's current amplification control method - Google Patents
Bipolar semiconductor device's current amplification control methodInfo
- Publication number
- JPS5543814A JPS5543814A JP11580478A JP11580478A JPS5543814A JP S5543814 A JPS5543814 A JP S5543814A JP 11580478 A JP11580478 A JP 11580478A JP 11580478 A JP11580478 A JP 11580478A JP S5543814 A JPS5543814 A JP S5543814A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- semiconductor
- hfe
- control method
- etching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To improve quality of a bipolar semiconductor device with a large hFE by lowering its hFE in such a manner as to etch surface of an emitter.
CONSTITUTION: Wnen an hFE is excessively inadequate, a silicon oxide film 6 is entirely removed from surface of a semiconductor by etching process. And then, an n+-type emitter layer surface is also etched by using a blended liquid of HNO3 and HF which is a liquid used for etching of a silicon semiconductor. After the etching, the semiconductor surface is heat-oxidized to form a new silicon oxide film, and then, a semiconductor device is completed by usual process.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11580478A JPS5543814A (en) | 1978-09-22 | 1978-09-22 | Bipolar semiconductor device's current amplification control method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11580478A JPS5543814A (en) | 1978-09-22 | 1978-09-22 | Bipolar semiconductor device's current amplification control method |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5543814A true JPS5543814A (en) | 1980-03-27 |
Family
ID=14671490
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11580478A Pending JPS5543814A (en) | 1978-09-22 | 1978-09-22 | Bipolar semiconductor device's current amplification control method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5543814A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1987001963A1 (en) * | 1985-10-05 | 1987-04-09 | Perfluktiv Technik Ag | Process for reducing the content of noxious matter in dust-containing flue or process gases |
-
1978
- 1978-09-22 JP JP11580478A patent/JPS5543814A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1987001963A1 (en) * | 1985-10-05 | 1987-04-09 | Perfluktiv Technik Ag | Process for reducing the content of noxious matter in dust-containing flue or process gases |
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