JPS5543814A - Bipolar semiconductor device's current amplification control method - Google Patents

Bipolar semiconductor device's current amplification control method

Info

Publication number
JPS5543814A
JPS5543814A JP11580478A JP11580478A JPS5543814A JP S5543814 A JPS5543814 A JP S5543814A JP 11580478 A JP11580478 A JP 11580478A JP 11580478 A JP11580478 A JP 11580478A JP S5543814 A JPS5543814 A JP S5543814A
Authority
JP
Japan
Prior art keywords
semiconductor device
semiconductor
hfe
control method
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11580478A
Other languages
Japanese (ja)
Inventor
Isao Shimura
Kousuke Tanaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP11580478A priority Critical patent/JPS5543814A/en
Publication of JPS5543814A publication Critical patent/JPS5543814A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To improve quality of a bipolar semiconductor device with a large hFE by lowering its hFE in such a manner as to etch surface of an emitter.
CONSTITUTION: Wnen an hFE is excessively inadequate, a silicon oxide film 6 is entirely removed from surface of a semiconductor by etching process. And then, an n+-type emitter layer surface is also etched by using a blended liquid of HNO3 and HF which is a liquid used for etching of a silicon semiconductor. After the etching, the semiconductor surface is heat-oxidized to form a new silicon oxide film, and then, a semiconductor device is completed by usual process.
COPYRIGHT: (C)1980,JPO&Japio
JP11580478A 1978-09-22 1978-09-22 Bipolar semiconductor device's current amplification control method Pending JPS5543814A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11580478A JPS5543814A (en) 1978-09-22 1978-09-22 Bipolar semiconductor device's current amplification control method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11580478A JPS5543814A (en) 1978-09-22 1978-09-22 Bipolar semiconductor device's current amplification control method

Publications (1)

Publication Number Publication Date
JPS5543814A true JPS5543814A (en) 1980-03-27

Family

ID=14671490

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11580478A Pending JPS5543814A (en) 1978-09-22 1978-09-22 Bipolar semiconductor device's current amplification control method

Country Status (1)

Country Link
JP (1) JPS5543814A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1987001963A1 (en) * 1985-10-05 1987-04-09 Perfluktiv Technik Ag Process for reducing the content of noxious matter in dust-containing flue or process gases

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1987001963A1 (en) * 1985-10-05 1987-04-09 Perfluktiv Technik Ag Process for reducing the content of noxious matter in dust-containing flue or process gases

Similar Documents

Publication Publication Date Title
JPS5543814A (en) Bipolar semiconductor device's current amplification control method
JPS57154855A (en) Manufacture of semiconductor device
JPS54154272A (en) Contact forming method for semiconductor device
JPS5737870A (en) Semiconductor device
JPS5530826A (en) Method of manufacturing semiconductor device
JPS5263682A (en) Production of mesa type transistor
JPS5496363A (en) Electrode forming method for semiconductor device
JPS52122479A (en) Etching solution of silicon
JPS5633841A (en) Manufacture of semiconductor device
JPS57177525A (en) Etching method for silicon oxide
JPS5415669A (en) Manufacture of mesa-type semiconductor device
JPS547882A (en) Manufacture for semiconductor device
JPS5245290A (en) Integrated circuit of semiconductor and method for its fabrication
JPS52129276A (en) Production of semiconductor device
JPS6430244A (en) Manufacture of semiconductor device
JPS53135846A (en) Etching method
JPS5737838A (en) Manufacture of semiconductor device
JPS51128261A (en) A method of producing semiconductor devices
JPS57173956A (en) Manufacture of semiconductor device
JPS538082A (en) Production of semiconductor device
JPS5724558A (en) Semicondctor device
JPS5360580A (en) Etching method of semiconductor material
JPS54116882A (en) Manufacture of semiconductor device
JPS5470783A (en) Forming method for separate oxide film of semiconductor device
JPS57100734A (en) Etching method for semiconductor substrate