JPS5427777A - Insulated gate type semiconductor device - Google Patents
Insulated gate type semiconductor deviceInfo
- Publication number
- JPS5427777A JPS5427777A JP9350777A JP9350777A JPS5427777A JP S5427777 A JPS5427777 A JP S5427777A JP 9350777 A JP9350777 A JP 9350777A JP 9350777 A JP9350777 A JP 9350777A JP S5427777 A JPS5427777 A JP S5427777A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- type semiconductor
- insulated gate
- gate type
- same substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
- H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9350777A JPS5427777A (en) | 1977-08-03 | 1977-08-03 | Insulated gate type semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9350777A JPS5427777A (en) | 1977-08-03 | 1977-08-03 | Insulated gate type semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5427777A true JPS5427777A (en) | 1979-03-02 |
JPS6123671B2 JPS6123671B2 (enrdf_load_stackoverflow) | 1986-06-06 |
Family
ID=14084252
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9350777A Granted JPS5427777A (en) | 1977-08-03 | 1977-08-03 | Insulated gate type semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5427777A (enrdf_load_stackoverflow) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60153167A (ja) * | 1984-01-20 | 1985-08-12 | Matsushita Electronics Corp | 半導体集積回路 |
-
1977
- 1977-08-03 JP JP9350777A patent/JPS5427777A/ja active Granted
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60153167A (ja) * | 1984-01-20 | 1985-08-12 | Matsushita Electronics Corp | 半導体集積回路 |
Also Published As
Publication number | Publication date |
---|---|
JPS6123671B2 (enrdf_load_stackoverflow) | 1986-06-06 |
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