JPS5427777A - Insulated gate type semiconductor device - Google Patents

Insulated gate type semiconductor device

Info

Publication number
JPS5427777A
JPS5427777A JP9350777A JP9350777A JPS5427777A JP S5427777 A JPS5427777 A JP S5427777A JP 9350777 A JP9350777 A JP 9350777A JP 9350777 A JP9350777 A JP 9350777A JP S5427777 A JPS5427777 A JP S5427777A
Authority
JP
Japan
Prior art keywords
semiconductor device
type semiconductor
insulated gate
gate type
same substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9350777A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6123671B2 (enrdf_load_stackoverflow
Inventor
Masanori Kikuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP9350777A priority Critical patent/JPS5427777A/ja
Publication of JPS5427777A publication Critical patent/JPS5427777A/ja
Publication of JPS6123671B2 publication Critical patent/JPS6123671B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
JP9350777A 1977-08-03 1977-08-03 Insulated gate type semiconductor device Granted JPS5427777A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9350777A JPS5427777A (en) 1977-08-03 1977-08-03 Insulated gate type semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9350777A JPS5427777A (en) 1977-08-03 1977-08-03 Insulated gate type semiconductor device

Publications (2)

Publication Number Publication Date
JPS5427777A true JPS5427777A (en) 1979-03-02
JPS6123671B2 JPS6123671B2 (enrdf_load_stackoverflow) 1986-06-06

Family

ID=14084252

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9350777A Granted JPS5427777A (en) 1977-08-03 1977-08-03 Insulated gate type semiconductor device

Country Status (1)

Country Link
JP (1) JPS5427777A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60153167A (ja) * 1984-01-20 1985-08-12 Matsushita Electronics Corp 半導体集積回路

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60153167A (ja) * 1984-01-20 1985-08-12 Matsushita Electronics Corp 半導体集積回路

Also Published As

Publication number Publication date
JPS6123671B2 (enrdf_load_stackoverflow) 1986-06-06

Similar Documents

Publication Publication Date Title
IT7924515A0 (it) Transistore ad effetto di campo, dotato di un elettrodo di porta isolato.
JPS5366181A (en) High dielectric strength mis type transistor
JPS5384570A (en) Field effect semiconductor device and its manufacture
JPS51150284A (en) Semiconductor unvolatile memory unit
JPS5427777A (en) Insulated gate type semiconductor device
JPS5228277A (en) Non-voltatile semiconductor memory device
NL188252C (nl) Halfgeleiderinrichting werkende met overgangselektronen.
JPS5263074A (en) Insulated gate type field effect transistor and its production
JPS52124876A (en) Insulated gate type field effect semiconductor
JPS53148395A (en) Semiconductor memory device
JPS51138394A (en) Semiconductor device
JPS52114285A (en) Mis type semiconductor device
JPS5315082A (en) Complementary type insulated gate field effect transistor circuit
JPS52100877A (en) Field effect transistor of junction type
JPS53130991A (en) Semiconductor device
JPS5297680A (en) Production of mis type semiconductor integrated circuit device
JPS5386152A (en) Complementary insulator gate field effect transistor circuit
JPS526036A (en) Semiconductor memory circuit
JPS53136975A (en) Charge transfer device
JPS5332685A (en) Semiconductor memory
JPS53108383A (en) Semiconductor deivce and its manufacture
JPS52147983A (en) Insulation gate type semiconductor device
JPS54938A (en) Mos type memory unit
JPS5280784A (en) Insulated gate fype field-effect transistor
JPS52129383A (en) Mis semicnductor integrated circuit device