JPS5419688A - Semiconductor - Google Patents
SemiconductorInfo
- Publication number
- JPS5419688A JPS5419688A JP8390178A JP8390178A JPS5419688A JP S5419688 A JPS5419688 A JP S5419688A JP 8390178 A JP8390178 A JP 8390178A JP 8390178 A JP8390178 A JP 8390178A JP S5419688 A JPS5419688 A JP S5419688A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
- H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30
- H01S5/5009—Amplifier structures not provided for in groups H01S5/02 - H01S5/30 the arrangement being polarisation-insensitive
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Geometry (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL7707720A NL7707720A (nl) | 1977-07-12 | 1977-07-12 | Halfgeleiderlaser of -versterker. |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5419688A true JPS5419688A (en) | 1979-02-14 |
JPS5755309B2 JPS5755309B2 (ja) | 1982-11-24 |
Family
ID=19828859
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8390178A Granted JPS5419688A (en) | 1977-07-12 | 1978-07-10 | Semiconductor |
Country Status (7)
Country | Link |
---|---|
US (1) | US4376307A (ja) |
EP (1) | EP0000412B1 (ja) |
JP (1) | JPS5419688A (ja) |
CA (1) | CA1124375A (ja) |
DE (1) | DE2860540D1 (ja) |
IT (1) | IT1096919B (ja) |
NL (1) | NL7707720A (ja) |
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5598884A (en) * | 1978-12-30 | 1980-07-28 | Fujitsu Ltd | Semiconductor light emitting device |
JPS55108789A (en) * | 1979-01-18 | 1980-08-21 | Nec Corp | Semiconductor laser |
JPS55123191A (en) * | 1979-03-16 | 1980-09-22 | Fujitsu Ltd | Semiconductor light emitting device |
JPS5618484A (en) * | 1979-07-24 | 1981-02-21 | Nec Corp | Manufacture of semiconductor laser |
JPS5627989A (en) * | 1979-08-14 | 1981-03-18 | Fujitsu Ltd | Semiconductor light emitting device |
JPS5654083A (en) * | 1979-10-05 | 1981-05-13 | Nec Corp | Semiconductor laser apparatus |
JPS5792885A (en) * | 1980-12-01 | 1982-06-09 | Sharp Corp | Semiconductor laser element |
JPS57153489A (en) * | 1981-03-17 | 1982-09-22 | Sharp Corp | Manufacture of semiconductor laser element |
JPS5956785A (ja) * | 1982-09-24 | 1984-04-02 | Sanyo Electric Co Ltd | 半導体レ−ザ |
JPS5994485A (ja) * | 1983-10-24 | 1984-05-31 | Hitachi Ltd | 半導体レ−ザ−装置 |
JPS6312870U (ja) * | 1987-06-22 | 1988-01-27 |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4376946A (en) * | 1980-11-28 | 1983-03-15 | Bell Telephone Laboratories, Incorporated | Superluminescent LED with efficient coupling to optical waveguide |
JPS58216486A (ja) * | 1982-06-10 | 1983-12-16 | Kokusai Denshin Denwa Co Ltd <Kdd> | 半導体レ−ザおよびその製造方法 |
JPS6021588A (ja) * | 1983-07-16 | 1985-02-02 | Univ Kyoto | 磁気電気光効果光増幅器 |
USRE34378E (en) * | 1984-03-16 | 1993-09-14 | Hitachi, Ltd. | Light emitting device with improved electrode structure to minimize short circuiting |
GB2156585B (en) * | 1984-03-16 | 1987-10-21 | Hitachi Ltd | Light-emitting device electrode |
US4794346A (en) * | 1984-11-21 | 1988-12-27 | Bell Communications Research, Inc. | Broadband semiconductor optical amplifier structure |
JPS62260120A (ja) * | 1986-05-07 | 1987-11-12 | Kokusai Denshin Denwa Co Ltd <Kdd> | 半導体外部光変調器 |
US4772854A (en) * | 1986-12-24 | 1988-09-20 | Bell Communications Research, Inc. | All optical repeater |
CA1292040C (en) * | 1988-08-26 | 1991-11-12 | Gadi Eisenstein | Semiconductor optical amplifier with shortened gain recovery time |
US5019787A (en) * | 1989-10-30 | 1991-05-28 | David Sarnoff Research Center, Inc. | Optical amplifier |
US5131001A (en) * | 1990-12-21 | 1992-07-14 | David Sarnoff Research Center, Inc. | Monolithic semiconductor light emitter and amplifier |
US5337176A (en) * | 1992-03-25 | 1994-08-09 | U. S. Philips Corporation | Optical amplifier with improved linearity |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS51138393A (en) * | 1975-05-26 | 1976-11-29 | Fujitsu Ltd | Semiconductor light emission device |
JPS5228887A (en) * | 1975-08-30 | 1977-03-04 | Fujitsu Ltd | Semiconductive emitter device |
JPS5245296A (en) * | 1975-10-07 | 1977-04-09 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductive phototransmission pass and semiconductor emission devic e used it |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3978428A (en) * | 1975-06-23 | 1976-08-31 | Xerox Corporation | Buried-heterostructure diode injection laser |
JPS5286093A (en) * | 1976-01-12 | 1977-07-16 | Hitachi Ltd | Striped semiconductor laser |
US4099999A (en) * | 1977-06-13 | 1978-07-11 | Xerox Corporation | Method of making etched-striped substrate planar laser |
GB2046983B (en) * | 1979-01-18 | 1983-03-16 | Nippon Electric Co | Semiconductor lasers |
-
1977
- 1977-07-12 NL NL7707720A patent/NL7707720A/xx not_active Application Discontinuation
-
1978
- 1978-07-03 DE DE7878200074T patent/DE2860540D1/de not_active Expired
- 1978-07-03 EP EP78200074A patent/EP0000412B1/en not_active Expired
- 1978-07-05 CA CA306,840A patent/CA1124375A/en not_active Expired
- 1978-07-07 IT IT25470/78A patent/IT1096919B/it active
- 1978-07-10 JP JP8390178A patent/JPS5419688A/ja active Granted
-
1980
- 1980-05-15 US US06/150,270 patent/US4376307A/en not_active Expired - Lifetime
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS51138393A (en) * | 1975-05-26 | 1976-11-29 | Fujitsu Ltd | Semiconductor light emission device |
JPS5228887A (en) * | 1975-08-30 | 1977-03-04 | Fujitsu Ltd | Semiconductive emitter device |
JPS5245296A (en) * | 1975-10-07 | 1977-04-09 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductive phototransmission pass and semiconductor emission devic e used it |
Cited By (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5598884A (en) * | 1978-12-30 | 1980-07-28 | Fujitsu Ltd | Semiconductor light emitting device |
JPS55108789A (en) * | 1979-01-18 | 1980-08-21 | Nec Corp | Semiconductor laser |
JPS5710590B2 (ja) * | 1979-01-18 | 1982-02-26 | ||
JPS55123191A (en) * | 1979-03-16 | 1980-09-22 | Fujitsu Ltd | Semiconductor light emitting device |
JPS6154280B2 (ja) * | 1979-07-24 | 1986-11-21 | Nippon Electric Co | |
JPS5618484A (en) * | 1979-07-24 | 1981-02-21 | Nec Corp | Manufacture of semiconductor laser |
JPS5627989A (en) * | 1979-08-14 | 1981-03-18 | Fujitsu Ltd | Semiconductor light emitting device |
JPS6237834B2 (ja) * | 1979-10-05 | 1987-08-14 | Nippon Electric Co | |
JPS5654083A (en) * | 1979-10-05 | 1981-05-13 | Nec Corp | Semiconductor laser apparatus |
JPS5792885A (en) * | 1980-12-01 | 1982-06-09 | Sharp Corp | Semiconductor laser element |
JPH0211025B2 (ja) * | 1980-12-01 | 1990-03-12 | Sharp Kk | |
JPS57153489A (en) * | 1981-03-17 | 1982-09-22 | Sharp Corp | Manufacture of semiconductor laser element |
JPS5956785A (ja) * | 1982-09-24 | 1984-04-02 | Sanyo Electric Co Ltd | 半導体レ−ザ |
JPS5994485A (ja) * | 1983-10-24 | 1984-05-31 | Hitachi Ltd | 半導体レ−ザ−装置 |
JPS6312870U (ja) * | 1987-06-22 | 1988-01-27 | ||
JPH0410705Y2 (ja) * | 1987-06-22 | 1992-03-17 |
Also Published As
Publication number | Publication date |
---|---|
EP0000412B1 (en) | 1981-03-18 |
IT1096919B (it) | 1985-08-26 |
IT7825470A0 (it) | 1978-07-07 |
EP0000412A2 (en) | 1979-01-24 |
NL7707720A (nl) | 1979-01-16 |
EP0000412A3 (en) | 1979-02-07 |
JPS5755309B2 (ja) | 1982-11-24 |
CA1124375A (en) | 1982-05-25 |
DE2860540D1 (en) | 1981-04-16 |
US4376307A (en) | 1983-03-08 |
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