JPS5792885A - Semiconductor laser element - Google Patents

Semiconductor laser element

Info

Publication number
JPS5792885A
JPS5792885A JP17001080A JP17001080A JPS5792885A JP S5792885 A JPS5792885 A JP S5792885A JP 17001080 A JP17001080 A JP 17001080A JP 17001080 A JP17001080 A JP 17001080A JP S5792885 A JPS5792885 A JP S5792885A
Authority
JP
Japan
Prior art keywords
layer
concave
substrate
clad
clad layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP17001080A
Other languages
Japanese (ja)
Other versions
JPH0211025B2 (en
Inventor
Toshiro Hayakawa
Saburo Yamamoto
Jiyunkou Takagi
Naotaka Otsuka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP17001080A priority Critical patent/JPS5792885A/en
Publication of JPS5792885A publication Critical patent/JPS5792885A/en
Publication of JPH0211025B2 publication Critical patent/JPH0211025B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/24—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a grooved structure, e.g. V-grooved, crescent active layer in groove, VSIS laser

Landscapes

  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To oscillate constantly a fundamental horizontal mode only by a method wherein layers such as the p type first clad layer and an n type light guide layer are piled successively, an effective refractive index difference is provided and an oscillated light wave is guided. CONSTITUTION:After an n<->GaAs laye 16 is grown on a p<->GaAs substrate 11, a V-shaped concave 10 is formed and the concave is etched in such a manner that the tip of the concave reaches the substrate 11. On the substrate 11 the first clad layer 13, the second clad layer 20, an activated layer 12, a light guide layer 21, the third clad layer 14 and a cap layer 17 are piled successively by a continuous liquid phase growing method. The thickness of the layers mentioned above are controlled in such a manner that the growth of the layer 13 stopped before the V-shaped concave becomes flat and after the growth of the layer 20 the concave becomes flat. With above method the thickness of the layer 20 is the largest at the center of the concave and the layer 20 has the distribution of the thikncess along the horizontal direction. Then an Al crystal mixing ratio is taken large enough and the refractive index difference between the layer 13 and the layer 12 is taken large enough, so that the leakage of the guided light wave into the current limiting layer 16 is eliminated.
JP17001080A 1980-12-01 1980-12-01 Semiconductor laser element Granted JPS5792885A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17001080A JPS5792885A (en) 1980-12-01 1980-12-01 Semiconductor laser element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17001080A JPS5792885A (en) 1980-12-01 1980-12-01 Semiconductor laser element

Publications (2)

Publication Number Publication Date
JPS5792885A true JPS5792885A (en) 1982-06-09
JPH0211025B2 JPH0211025B2 (en) 1990-03-12

Family

ID=15896909

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17001080A Granted JPS5792885A (en) 1980-12-01 1980-12-01 Semiconductor laser element

Country Status (1)

Country Link
JP (1) JPS5792885A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59147479A (en) * 1983-02-09 1984-08-23 Sharp Corp Semiconductor laser element

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5419688A (en) * 1977-07-12 1979-02-14 Philips Nv Semiconductor
JPS55140285A (en) * 1979-03-22 1980-11-01 Nec Corp Semiconductor laser

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5419688A (en) * 1977-07-12 1979-02-14 Philips Nv Semiconductor
JPS55140285A (en) * 1979-03-22 1980-11-01 Nec Corp Semiconductor laser

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59147479A (en) * 1983-02-09 1984-08-23 Sharp Corp Semiconductor laser element
JPH0252868B2 (en) * 1983-02-09 1990-11-14 Sharp Kk

Also Published As

Publication number Publication date
JPH0211025B2 (en) 1990-03-12

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