EP0000412A3 - Junction laser - Google Patents
Junction laser Download PDFInfo
- Publication number
- EP0000412A3 EP0000412A3 EP78200074A EP78200074A EP0000412A3 EP 0000412 A3 EP0000412 A3 EP 0000412A3 EP 78200074 A EP78200074 A EP 78200074A EP 78200074 A EP78200074 A EP 78200074A EP 0000412 A3 EP0000412 A3 EP 0000412A3
- Authority
- EP
- European Patent Office
- Prior art keywords
- junction laser
- junction
- laser
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
- H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30
- H01S5/5009—Amplifier structures not provided for in groups H01S5/02 - H01S5/30 the arrangement being polarisation-insensitive
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Geometry (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL7707720 | 1977-07-12 | ||
NL7707720A NL7707720A (en) | 1977-07-12 | 1977-07-12 | SEMICONDUCTOR LASER OR AMPLIFIER. |
Publications (3)
Publication Number | Publication Date |
---|---|
EP0000412A2 EP0000412A2 (en) | 1979-01-24 |
EP0000412A3 true EP0000412A3 (en) | 1979-02-07 |
EP0000412B1 EP0000412B1 (en) | 1981-03-18 |
Family
ID=19828859
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP78200074A Expired EP0000412B1 (en) | 1977-07-12 | 1978-07-03 | Semiconductor injection laser or intensifier |
Country Status (7)
Country | Link |
---|---|
US (1) | US4376307A (en) |
EP (1) | EP0000412B1 (en) |
JP (1) | JPS5419688A (en) |
CA (1) | CA1124375A (en) |
DE (1) | DE2860540D1 (en) |
IT (1) | IT1096919B (en) |
NL (1) | NL7707720A (en) |
Families Citing this family (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5598884A (en) * | 1978-12-30 | 1980-07-28 | Fujitsu Ltd | Semiconductor light emitting device |
JPS55108789A (en) * | 1979-01-18 | 1980-08-21 | Nec Corp | Semiconductor laser |
JPS55123191A (en) * | 1979-03-16 | 1980-09-22 | Fujitsu Ltd | Semiconductor light emitting device |
JPS5618484A (en) * | 1979-07-24 | 1981-02-21 | Nec Corp | Manufacture of semiconductor laser |
JPS5627989A (en) * | 1979-08-14 | 1981-03-18 | Fujitsu Ltd | Semiconductor light emitting device |
JPS5654083A (en) * | 1979-10-05 | 1981-05-13 | Nec Corp | Semiconductor laser apparatus |
US4376946A (en) * | 1980-11-28 | 1983-03-15 | Bell Telephone Laboratories, Incorporated | Superluminescent LED with efficient coupling to optical waveguide |
JPS5792885A (en) * | 1980-12-01 | 1982-06-09 | Sharp Corp | Semiconductor laser element |
JPS57153489A (en) * | 1981-03-17 | 1982-09-22 | Sharp Corp | Manufacture of semiconductor laser element |
JPS58216486A (en) * | 1982-06-10 | 1983-12-16 | Kokusai Denshin Denwa Co Ltd <Kdd> | Semiconductor laser and manufacture thereof |
JPS5956785A (en) * | 1982-09-24 | 1984-04-02 | Sanyo Electric Co Ltd | Semiconductor laser |
JPS6021588A (en) * | 1983-07-16 | 1985-02-02 | Univ Kyoto | Magnetoelectric photo effect photo amplifier |
JPS5994485A (en) * | 1983-10-24 | 1984-05-31 | Hitachi Ltd | Semiconductor laser device |
GB2156585B (en) * | 1984-03-16 | 1987-10-21 | Hitachi Ltd | Light-emitting device electrode |
USRE34378E (en) * | 1984-03-16 | 1993-09-14 | Hitachi, Ltd. | Light emitting device with improved electrode structure to minimize short circuiting |
US4794346A (en) * | 1984-11-21 | 1988-12-27 | Bell Communications Research, Inc. | Broadband semiconductor optical amplifier structure |
JPS62260120A (en) * | 1986-05-07 | 1987-11-12 | Kokusai Denshin Denwa Co Ltd <Kdd> | Semiconductor external light modulator |
US4772854A (en) * | 1986-12-24 | 1988-09-20 | Bell Communications Research, Inc. | All optical repeater |
JPH0410705Y2 (en) * | 1987-06-22 | 1992-03-17 | ||
CA1292040C (en) * | 1988-08-26 | 1991-11-12 | Gadi Eisenstein | Semiconductor optical amplifier with shortened gain recovery time |
US5019787A (en) * | 1989-10-30 | 1991-05-28 | David Sarnoff Research Center, Inc. | Optical amplifier |
US5131001A (en) * | 1990-12-21 | 1992-07-14 | David Sarnoff Research Center, Inc. | Monolithic semiconductor light emitter and amplifier |
US5337176A (en) * | 1992-03-25 | 1994-08-09 | U. S. Philips Corporation | Optical amplifier with improved linearity |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS51138393A (en) * | 1975-05-26 | 1976-11-29 | Fujitsu Ltd | Semiconductor light emission device |
US3978428A (en) * | 1975-06-23 | 1976-08-31 | Xerox Corporation | Buried-heterostructure diode injection laser |
JPS609355B2 (en) * | 1975-08-30 | 1985-03-09 | 富士通株式会社 | Manufacturing method of semiconductor light emitting device |
JPS5245296A (en) * | 1975-10-07 | 1977-04-09 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductive phototransmission pass and semiconductor emission devic e used it |
JPS5286093A (en) * | 1976-01-12 | 1977-07-16 | Hitachi Ltd | Striped semiconductor laser |
US4099999A (en) * | 1977-06-13 | 1978-07-11 | Xerox Corporation | Method of making etched-striped substrate planar laser |
GB2046983B (en) * | 1979-01-18 | 1983-03-16 | Nippon Electric Co | Semiconductor lasers |
-
1977
- 1977-07-12 NL NL7707720A patent/NL7707720A/en not_active Application Discontinuation
-
1978
- 1978-07-03 DE DE7878200074T patent/DE2860540D1/en not_active Expired
- 1978-07-03 EP EP78200074A patent/EP0000412B1/en not_active Expired
- 1978-07-05 CA CA306,840A patent/CA1124375A/en not_active Expired
- 1978-07-07 IT IT25470/78A patent/IT1096919B/en active
- 1978-07-10 JP JP8390178A patent/JPS5419688A/en active Granted
-
1980
- 1980-05-15 US US06/150,270 patent/US4376307A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JPS5419688A (en) | 1979-02-14 |
US4376307A (en) | 1983-03-08 |
NL7707720A (en) | 1979-01-16 |
IT7825470A0 (en) | 1978-07-07 |
IT1096919B (en) | 1985-08-26 |
EP0000412A2 (en) | 1979-01-24 |
CA1124375A (en) | 1982-05-25 |
JPS5755309B2 (en) | 1982-11-24 |
EP0000412B1 (en) | 1981-03-18 |
DE2860540D1 (en) | 1981-04-16 |
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Legal Events
Date | Code | Title | Description |
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PUAI | Public reference made under article 153(3) epc to a published international application that has entered the european phase |
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PUAL | Search report despatched |
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