JPS541624B2 - - Google Patents
Info
- Publication number
- JPS541624B2 JPS541624B2 JP11740975A JP11740975A JPS541624B2 JP S541624 B2 JPS541624 B2 JP S541624B2 JP 11740975 A JP11740975 A JP 11740975A JP 11740975 A JP11740975 A JP 11740975A JP S541624 B2 JPS541624 B2 JP S541624B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
- C30B31/16—Feed and outlet means for the gases; Modifying the flow of the gases
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45578—Elongated nozzles, tubes with holes
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP50117409A JPS5242075A (en) | 1975-09-29 | 1975-09-29 | Device for controlling gas atmosphere in semiconductor producing equip ment |
US05/727,772 US4096822A (en) | 1975-09-29 | 1976-09-29 | Gaseous atmosphere control apparatus for a semiconductor manufacturing system |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP50117409A JPS5242075A (en) | 1975-09-29 | 1975-09-29 | Device for controlling gas atmosphere in semiconductor producing equip ment |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5242075A JPS5242075A (en) | 1977-04-01 |
JPS541624B2 true JPS541624B2 (ja) | 1979-01-26 |
Family
ID=14710922
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP50117409A Granted JPS5242075A (en) | 1975-09-29 | 1975-09-29 | Device for controlling gas atmosphere in semiconductor producing equip ment |
Country Status (2)
Country | Link |
---|---|
US (1) | US4096822A (ja) |
JP (1) | JPS5242075A (ja) |
Families Citing this family (46)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4950982A (ja) * | 1972-09-14 | 1974-05-17 | ||
JPS5942970B2 (ja) * | 1979-03-29 | 1984-10-18 | テルサ−ムコ株式会社 | 半導体熱処理用反応管 |
JPS5944771B2 (ja) * | 1979-03-29 | 1984-11-01 | テルサ−ムコ株式会社 | 半導体熱処理炉 |
FR2463819A1 (fr) * | 1979-08-21 | 1981-02-27 | Thomson Csf | Reacteur de depot chimique en phase vapeur fonctionnant sous basse pression |
US4263872A (en) * | 1980-01-31 | 1981-04-28 | Rca Corporation | Radiation heated reactor for chemical vapor deposition on substrates |
US4401689A (en) * | 1980-01-31 | 1983-08-30 | Rca Corporation | Radiation heated reactor process for chemical vapor deposition on substrates |
US4819579A (en) * | 1981-01-14 | 1989-04-11 | Northern Telecom Limited | Coating of semiconductor wafers and apparatus therefor |
EP0181624B1 (en) * | 1981-01-14 | 1989-12-06 | Nortel Networks Corporation | Coating of semiconductor wafers and apparatus therefor |
JPS5885523A (ja) * | 1981-11-17 | 1983-05-21 | Nec Home Electronics Ltd | 半導体製造装置 |
US4696833A (en) * | 1982-08-27 | 1987-09-29 | Hewlett-Packard Company | Method for applying a uniform coating to integrated circuit wafers by means of chemical deposition |
AU549376B2 (en) * | 1983-02-25 | 1986-01-23 | Toyota Jidosha Kabushiki Kaisha | Plasma treatment |
JPH0817159B2 (ja) * | 1985-08-15 | 1996-02-21 | キヤノン株式会社 | 堆積膜の形成方法 |
FR2587731B1 (fr) * | 1985-09-23 | 1988-01-08 | Centre Nat Rech Scient | Procede et dispositif de depot chimique de couches minces uniformes sur de nombreux substrats plans a partir d'une phase gazeuse |
US4837048A (en) * | 1985-10-24 | 1989-06-06 | Canon Kabushiki Kaisha | Method for forming a deposited film |
JPH0645890B2 (ja) * | 1985-12-18 | 1994-06-15 | キヤノン株式会社 | 堆積膜形成法 |
JPS62142778A (ja) * | 1985-12-18 | 1987-06-26 | Canon Inc | 堆積膜形成法 |
US5160543A (en) * | 1985-12-20 | 1992-11-03 | Canon Kabushiki Kaisha | Device for forming a deposited film |
JPH0746729B2 (ja) * | 1985-12-26 | 1995-05-17 | キヤノン株式会社 | 薄膜トランジスタの製造方法 |
US4834023A (en) * | 1986-12-19 | 1989-05-30 | Canon Kabushiki Kaisha | Apparatus for forming deposited film |
US5221556A (en) * | 1987-06-24 | 1993-06-22 | Epsilon Technology, Inc. | Gas injectors for reaction chambers in CVD systems |
JP2781814B2 (ja) * | 1987-11-20 | 1998-07-30 | 東京エレクトロン株式会社 | 縦形気相成長装置 |
US5279670A (en) * | 1990-03-31 | 1994-01-18 | Tokyo Electron Sagami Limited | Vertical type diffusion apparatus |
JP2859164B2 (ja) * | 1995-05-24 | 1999-02-17 | 九州日本電気株式会社 | 半導体装置の製造装置 |
JP3373990B2 (ja) * | 1995-10-30 | 2003-02-04 | 東京エレクトロン株式会社 | 成膜装置及びその方法 |
JP3554297B2 (ja) * | 2001-07-26 | 2004-08-18 | 株式会社エフティーエル | 半導体基板熱処理装置及び半導体素子の製造方法 |
US6808741B1 (en) * | 2001-10-26 | 2004-10-26 | Seagate Technology Llc | In-line, pass-by method for vapor lubrication |
KR100829327B1 (ko) * | 2002-04-05 | 2008-05-13 | 가부시키가이샤 히다치 고쿠사이 덴키 | 기판 처리 장치 및 반응 용기 |
US20030047536A1 (en) * | 2002-10-02 | 2003-03-13 | Johnson Wayne L. | Method and apparatus for distributing gas within high density plasma process chamber to ensure uniform plasma |
JP2005082880A (ja) * | 2003-09-11 | 2005-03-31 | Shoka Kagi Kofun Yugenkoshi | 有機el発光装置の成膜設備 |
US20060185589A1 (en) * | 2005-02-23 | 2006-08-24 | Raanan Zehavi | Silicon gas injector and method of making |
JP4951501B2 (ja) * | 2005-03-01 | 2012-06-13 | 株式会社日立国際電気 | 基板処理装置および半導体デバイスの製造方法 |
WO2007111348A1 (ja) * | 2006-03-28 | 2007-10-04 | Hitachi Kokusai Electric Inc. | 基板処理装置 |
JP5568212B2 (ja) * | 2007-09-19 | 2014-08-06 | 株式会社日立国際電気 | 基板処理装置、そのコーティング方法、基板処理方法及び半導体デバイスの製造方法 |
CN101813236B (zh) * | 2009-12-01 | 2013-01-23 | 东莞宏威数码机械有限公司 | 气体输送装置及输送方法 |
JP5912230B2 (ja) * | 2010-06-25 | 2016-04-27 | 光洋サーモシステム株式会社 | 連続拡散処理装置 |
JP5912229B2 (ja) * | 2010-06-25 | 2016-04-27 | 光洋サーモシステム株式会社 | 連続拡散処理装置 |
JP5243519B2 (ja) * | 2010-12-22 | 2013-07-24 | 東京エレクトロン株式会社 | 成膜装置 |
US9512519B2 (en) | 2012-12-03 | 2016-12-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Atomic layer deposition apparatus and method |
KR102215965B1 (ko) * | 2014-04-11 | 2021-02-18 | 주성엔지니어링(주) | 가스 분사 장치 및 이를 포함하는 기판 처리 장치 |
JP6320903B2 (ja) * | 2014-11-19 | 2018-05-09 | 東京エレクトロン株式会社 | ノズル及びこれを用いた基板処理装置 |
JP5953401B2 (ja) * | 2015-05-20 | 2016-07-20 | 光洋サーモシステム株式会社 | 連続拡散処理装置 |
JP6010183B2 (ja) * | 2015-05-20 | 2016-10-19 | 光洋サーモシステム株式会社 | 連続拡散処理装置 |
JP6010182B2 (ja) * | 2015-05-20 | 2016-10-19 | 光洋サーモシステム株式会社 | 連続拡散処理装置 |
US20170207078A1 (en) * | 2016-01-15 | 2017-07-20 | Taiwan Semiconductor Manufacturing Co., Ltd. | Atomic layer deposition apparatus and semiconductor process |
KR20210043810A (ko) * | 2019-10-14 | 2021-04-22 | 삼성전자주식회사 | 반도체 제조 장비 |
WO2021225934A1 (en) * | 2020-05-06 | 2021-11-11 | Applied Materials, Inc. | Gas distribution assembly |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4944674A (ja) * | 1972-08-31 | 1974-04-26 | ||
JPS50118669A (ja) * | 1974-03-01 | 1975-09-17 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1289833B (de) * | 1964-12-29 | 1969-02-27 | Siemens Ag | Verfahren zum epitaktischen Abscheiden einer Halbleiterschicht |
US3602192A (en) * | 1969-05-19 | 1971-08-31 | Ibm | Semiconductor wafer processing |
NL7003431A (ja) * | 1970-03-11 | 1971-09-14 | ||
US3678893A (en) * | 1970-05-01 | 1972-07-25 | Stewart Warner Corp | Improved device for supporting semiconductor wafers |
FR2227640B1 (ja) * | 1973-04-27 | 1977-12-30 | Radiotechnique Compelec | |
US4018183A (en) * | 1973-11-15 | 1977-04-19 | U.S. Philips Corporation | Apparatus for treating a plurality of semiconductor slices to a reacting gas current |
US4018184A (en) * | 1975-07-28 | 1977-04-19 | Mitsubishi Denki Kabushiki Kaisha | Apparatus for treatment of semiconductor wafer |
JPS5245874A (en) * | 1975-10-09 | 1977-04-11 | Nippon Denso Co Ltd | Transfer device of semiconductor substrate holding device |
-
1975
- 1975-09-29 JP JP50117409A patent/JPS5242075A/ja active Granted
-
1976
- 1976-09-29 US US05/727,772 patent/US4096822A/en not_active Expired - Lifetime
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4944674A (ja) * | 1972-08-31 | 1974-04-26 | ||
JPS50118669A (ja) * | 1974-03-01 | 1975-09-17 |
Also Published As
Publication number | Publication date |
---|---|
JPS5242075A (en) | 1977-04-01 |
US4096822A (en) | 1978-06-27 |