JP6320903B2 - ノズル及びこれを用いた基板処理装置 - Google Patents
ノズル及びこれを用いた基板処理装置 Download PDFInfo
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- JP6320903B2 JP6320903B2 JP2014234500A JP2014234500A JP6320903B2 JP 6320903 B2 JP6320903 B2 JP 6320903B2 JP 2014234500 A JP2014234500 A JP 2014234500A JP 2014234500 A JP2014234500 A JP 2014234500A JP 6320903 B2 JP6320903 B2 JP 6320903B2
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- 238000012545 processing Methods 0.000 title claims description 185
- 239000000758 substrate Substances 0.000 title claims description 70
- 239000012530 fluid Substances 0.000 claims description 151
- 238000005192 partition Methods 0.000 claims description 50
- 238000000926 separation method Methods 0.000 claims description 41
- 239000006185 dispersion Substances 0.000 claims description 32
- 230000002093 peripheral effect Effects 0.000 claims description 19
- 238000010926 purge Methods 0.000 claims description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 239000010453 quartz Substances 0.000 claims description 5
- 239000007789 gas Substances 0.000 description 219
- 235000012431 wafers Nutrition 0.000 description 44
- 238000000034 method Methods 0.000 description 25
- 238000009826 distribution Methods 0.000 description 21
- 239000002994 raw material Substances 0.000 description 18
- 230000015572 biosynthetic process Effects 0.000 description 12
- 238000000354 decomposition reaction Methods 0.000 description 6
- 239000011261 inert gas Substances 0.000 description 6
- 239000012495 reaction gas Substances 0.000 description 6
- 238000012546 transfer Methods 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 5
- 230000001590 oxidative effect Effects 0.000 description 4
- 238000000231 atomic layer deposition Methods 0.000 description 3
- 238000005121 nitriding Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000004088 simulation Methods 0.000 description 3
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 239000007795 chemical reaction product Substances 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000002052 molecular layer Substances 0.000 description 2
- 125000002524 organometallic group Chemical group 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- CGRVKSPUKAFTBN-UHFFFAOYSA-N N-silylbutan-1-amine Chemical compound CCCCN[SiH3] CGRVKSPUKAFTBN-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- JFWBIRAGFWPMTI-UHFFFAOYSA-N [Zr].[CH]1C=CC=C1 Chemical compound [Zr].[CH]1C=CC=C1 JFWBIRAGFWPMTI-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 125000002147 dimethylamino group Chemical group [H]C([H])([H])N(*)C([H])([H])[H] 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45587—Mechanical means for changing the gas flow
- C23C16/45591—Fixed means, e.g. wings, baffles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
- C23C16/45548—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction
- C23C16/45551—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction for relative movement of the substrate and the gas injectors or half-reaction reactor compartments
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45578—Elongated nozzles, tubes with holes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
- B05B1/00—Nozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means
- B05B1/14—Nozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means with multiple outlet openings; with strainers in or outside the outlet opening
- B05B1/20—Arrangements of several outlets along elongated bodies, e.g. perforated pipes or troughs, e.g. spray booms; Outlet elements therefor
- B05B1/205—Arrangements of several outlets along elongated bodies, e.g. perforated pipes or troughs, e.g. spray booms; Outlet elements therefor characterised by the longitudinal shape of the elongated body
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45587—Mechanical means for changing the gas flow
Description
内部に管路が形成され、該管路の長手方向に沿って複数の流体吐出孔が形成された平面状の流体吐出面を有する管状部と、
前記管路内に前記長手方向に沿って延在して設けられ、前記管路を前記流体吐出面を含む第1の領域と、前記流体吐出面を含まず、前記流体吐出面から最も遠い位置に配置された領域を含む第2の領域とに仕切り、前記長手方向において前記複数の流体吐出孔よりも少ない数の分散穴が形成された仕切板と、
前記第2の領域に連通する流体導入路と、を有し、
前記管状部の先端は閉じており、
前記仕切板は前記管路の先端には形成されておらず、前記管路の先端に前記流体が前記第2の領域から前記第1の領域に折り返し進入可能な折り返し流路が形成されている。
2 サセプタ
24 凹部(基板載置領域)
30、32 処理ガスノズル
41、42 分離ガスノズル
100 制御部
300 管状部
310 管路
311 流体吐出領域
312 流体通流領域
313 折り返し流路
320 流体導入路
330 流体吐出孔
340 仕切板
341 仕切部
342 分散穴
P1、P2 処理領域
W ウェハー
Claims (20)
- 流体を供給するためのノズルであって、
内部に管路が形成され、該管路の長手方向に沿って複数の流体吐出孔が形成された平面状の流体吐出面を有する管状部と、
前記管路内に前記長手方向に沿って延在して設けられ、前記管路を前記流体吐出面を含む第1の領域と、前記流体吐出面を含まず、前記流体吐出面から最も遠い位置に配置された領域を含む第2の領域とに仕切り、前記長手方向において前記複数の流体吐出孔よりも少ない数の分散穴が形成された仕切板と、
前記第2の領域に連通する流体導入路と、を有し、
前記管状部の先端は閉じており、
前記仕切板は前記管路の先端には形成されておらず、前記管路の先端に前記流体が前記第2の領域から前記第1の領域に折り返し進入可能な折り返し流路が形成されているノズル。 - 前記分散穴の径は、前記流体吐出孔の径よりも大きい請求項1に記載のノズル。
- 前記複数の流体吐出孔は、所定間隔を有して形成されている請求項1又は2に記載のノズル。
- 前記複数の流体吐出孔は、前記管路の幅方向に複数の列をなして形成されている請求項3に記載のノズル。
- 前記複数の列の各列をなす前記複数の流体吐出孔は、前記長手方向においては異なる位置に形成されている請求項4に記載のノズル。
- 前記分散穴は、前記所定間隔よりも広い間隔を有して形成されている請求項3乃至5のいずれか一項に記載のノズル。
- 前記間隔は所定間隔である請求項6に記載のノズル。
- 前記間隔は、前記管路の先端に近づく程広くなる請求項6に記載のノズル。
- 前記分散穴は、前記流体導入路と前記仕切板の接合部には形成されていない請求項1乃至8のいずれか一項に記載のノズル。
- 前記流体導入路と前記第2の領域の断面形状は同一であり、前記流体導入路と前記第2の領域とは連続的に接続されている請求項9に記載のノズル。
- 前記流体吐出面から最も遠い位置に配置された領域は、平面状の領域である請求項1乃至10のいずれか一項に記載のノズル。
- 前記折り返し流路は、前記分散穴よりも大きな開口を形成している請求項11に記載のノズル。
- 前記管状部は、長方形の断面形状を有する請求項1乃至12のいずれか一項に記載のノズル。
- 前記管状部、前記仕切板及び前記流体導入路は、石英で一体構成されている請求項1乃至13のいずれか一項に記載のノズル。
- 処理室と、
該処理室内に設けられ、表面上に基板を載置支持可能なサセプタと、
該サセプタの表面に、前記流体吐出面が対向するように設けられた請求項1乃至14のいずれか一項に記載のノズルと、を有する基板処理装置。 - 前記サセプタは、回転可能であるとともに周方向に沿って複数の基板を載置支持可能であり、
前記ノズルは、前記サセプタの半径方向に沿って延在して設けられ、前記流体導入路が前記サセプタの外周側、前記管状部の先端が前記サセプタの回転中心側となるように配置された請求項15に記載の基板処理装置。 - 前記処理室内の前記サセプタの上方に、前記周方向に沿って、前記サセプタに原料ガスを供給する第1の処理領域、前記原料ガスと反応可能な処理ガスを供給する第2の処理領域とを有し、前記ノズルが前記第1の処理領域内に設けられた請求項16に記載の基板処理装置。
- 前記サセプタの前記周方向における前記第1の処理領域と前記第2の処理領域との間には、パージガスを供給する分離領域が設けられた請求項17に記載の基板処理装置。
- 前記ノズルの前記流体導入路は、高誘電体膜を成膜する原料ガスを供給可能なガス供給源に接続された請求項18に記載の基板処理装置。
- 前記第2の処理領域には前記処理ガスを供給可能な処理ガス供給ノズルが設けられ、
前記分離領域には前記パージガスを供給可能なパージガス供給ノズルが設けられ、
前記処理ガス供給ノズル及び前記パージガス供給ノズルは、前記仕切板を有さないノズルである請求項19に記載の基板処理装置。
Priority Applications (4)
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JP2014234500A JP6320903B2 (ja) | 2014-11-19 | 2014-11-19 | ノズル及びこれを用いた基板処理装置 |
US14/933,123 US10472719B2 (en) | 2014-11-19 | 2015-11-05 | Nozzle and substrate processing apparatus using same |
KR1020150160348A KR101917414B1 (ko) | 2014-11-19 | 2015-11-16 | 노즐 및 이를 사용한 기판 처리 장치 |
TW104137808A TWI628307B (zh) | 2014-11-19 | 2015-11-17 | 噴嘴及使用其之基板處理裝置 |
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JP2014234500A JP6320903B2 (ja) | 2014-11-19 | 2014-11-19 | ノズル及びこれを用いた基板処理装置 |
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JP2016100396A JP2016100396A (ja) | 2016-05-30 |
JP6320903B2 true JP6320903B2 (ja) | 2018-05-09 |
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US (1) | US10472719B2 (ja) |
JP (1) | JP6320903B2 (ja) |
KR (1) | KR101917414B1 (ja) |
TW (1) | TWI628307B (ja) |
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KR102474847B1 (ko) * | 2018-04-25 | 2022-12-06 | 삼성전자주식회사 | 가스 인젝터 및 웨이퍼 처리 장치 |
KR102315665B1 (ko) * | 2019-08-19 | 2021-10-22 | 세메스 주식회사 | 기판 처리 장치 |
EP4023343A4 (en) * | 2019-08-30 | 2023-08-23 | Kyocera Corporation | COATING DEVICE, COATING FILM AND COATING METHOD |
JP7037526B2 (ja) * | 2019-09-10 | 2022-03-16 | 株式会社Kokusai Electric | 基板処理装置、半導体装置の製造方法及びプログラム |
US11752509B2 (en) * | 2021-06-17 | 2023-09-12 | Upside Foods, Inc. | Fluid dispenser for recovering material from a surface |
CN113846315B (zh) * | 2021-09-27 | 2022-08-02 | 华中科技大学 | 空间隔离原子层沉积装置 |
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JP5423205B2 (ja) * | 2008-08-29 | 2014-02-19 | 東京エレクトロン株式会社 | 成膜装置 |
JP5062144B2 (ja) * | 2008-11-10 | 2012-10-31 | 東京エレクトロン株式会社 | ガスインジェクター |
JP5093078B2 (ja) | 2008-12-03 | 2012-12-05 | 東京エレクトロン株式会社 | 成膜装置 |
JP2012084598A (ja) * | 2010-10-07 | 2012-04-26 | Tokyo Electron Ltd | 成膜装置、成膜方法及び記憶媒体 |
JP2011142347A (ja) * | 2011-04-08 | 2011-07-21 | Hitachi Kokusai Electric Inc | 基板処理装置 |
JP5803714B2 (ja) | 2012-02-09 | 2015-11-04 | 東京エレクトロン株式会社 | 成膜装置 |
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KR101917414B1 (ko) | 2018-11-09 |
US10472719B2 (en) | 2019-11-12 |
TWI628307B (zh) | 2018-07-01 |
TW201629260A (zh) | 2016-08-16 |
US20160138158A1 (en) | 2016-05-19 |
KR20160059968A (ko) | 2016-05-27 |
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