JPS54155771A - Pattern forming method - Google Patents

Pattern forming method

Info

Publication number
JPS54155771A
JPS54155771A JP6466878A JP6466878A JPS54155771A JP S54155771 A JPS54155771 A JP S54155771A JP 6466878 A JP6466878 A JP 6466878A JP 6466878 A JP6466878 A JP 6466878A JP S54155771 A JPS54155771 A JP S54155771A
Authority
JP
Japan
Prior art keywords
layer
pattern
interval
etching
etched
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6466878A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6326536B2 (OSRAM
Inventor
Yoshimasa Kato
Hiroshi Gokan
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP6466878A priority Critical patent/JPS54155771A/ja
Publication of JPS54155771A publication Critical patent/JPS54155771A/ja
Publication of JPS6326536B2 publication Critical patent/JPS6326536B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P76/4083—

Landscapes

  • Drying Of Semiconductors (AREA)
JP6466878A 1978-05-29 1978-05-29 Pattern forming method Granted JPS54155771A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6466878A JPS54155771A (en) 1978-05-29 1978-05-29 Pattern forming method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6466878A JPS54155771A (en) 1978-05-29 1978-05-29 Pattern forming method

Publications (2)

Publication Number Publication Date
JPS54155771A true JPS54155771A (en) 1979-12-08
JPS6326536B2 JPS6326536B2 (OSRAM) 1988-05-30

Family

ID=13264792

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6466878A Granted JPS54155771A (en) 1978-05-29 1978-05-29 Pattern forming method

Country Status (1)

Country Link
JP (1) JPS54155771A (OSRAM)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56130926A (en) * 1980-03-18 1981-10-14 Nec Corp Forming method of mask pattern
JPS57145377A (en) * 1981-03-03 1982-09-08 Nec Corp Manufacture of schottky barrier type field effect transistor
JP2007227934A (ja) * 2006-02-24 2007-09-06 Hynix Semiconductor Inc 半導体素子の微細パターン形成方法及び基板用パターン形成方法
US7745339B2 (en) 2006-02-24 2010-06-29 Hynix Semiconductor Inc. Method for forming fine pattern of semiconductor device
US7754591B2 (en) 2006-02-24 2010-07-13 Hynix Semiconductor Inc. Method for forming fine pattern of semiconductor device
US20220189772A1 (en) * 2020-12-15 2022-06-16 Applied Materials, Inc. Directional modification of patterning structure to enhance pattern elongation process margin

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5324277A (en) * 1976-08-18 1978-03-06 Nec Corp Semiconductor devic e and its production

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5324277A (en) * 1976-08-18 1978-03-06 Nec Corp Semiconductor devic e and its production

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56130926A (en) * 1980-03-18 1981-10-14 Nec Corp Forming method of mask pattern
JPS57145377A (en) * 1981-03-03 1982-09-08 Nec Corp Manufacture of schottky barrier type field effect transistor
JP2007227934A (ja) * 2006-02-24 2007-09-06 Hynix Semiconductor Inc 半導体素子の微細パターン形成方法及び基板用パターン形成方法
US7745339B2 (en) 2006-02-24 2010-06-29 Hynix Semiconductor Inc. Method for forming fine pattern of semiconductor device
US7754591B2 (en) 2006-02-24 2010-07-13 Hynix Semiconductor Inc. Method for forming fine pattern of semiconductor device
US20220189772A1 (en) * 2020-12-15 2022-06-16 Applied Materials, Inc. Directional modification of patterning structure to enhance pattern elongation process margin
US11984318B2 (en) * 2020-12-15 2024-05-14 Applied Materials, Inc. Directional modification of patterning structure to enhance pattern elongation process margin

Also Published As

Publication number Publication date
JPS6326536B2 (OSRAM) 1988-05-30

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