JPS54147790A - Solidstate pick up element - Google Patents
Solidstate pick up elementInfo
- Publication number
- JPS54147790A JPS54147790A JP5548478A JP5548478A JPS54147790A JP S54147790 A JPS54147790 A JP S54147790A JP 5548478 A JP5548478 A JP 5548478A JP 5548478 A JP5548478 A JP 5548478A JP S54147790 A JPS54147790 A JP S54147790A
- Authority
- JP
- Japan
- Prior art keywords
- elements
- diffusion
- constituting
- drain region
- gate electrodes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000009792 diffusion process Methods 0.000 abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 239000004020 conductor Substances 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 238000003475 lamination Methods 0.000 abstract 1
- 239000011159 matrix material Substances 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14665—Imagers using a photoconductor layer
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
PURPOSE:To increase the density of number of switching elements, by constituting the switching elements consisting of the video element with the MOS type FET having the drain toward a given direction. CONSTITUTION:The common drain region 8 of the MOSFET elements Y1 to Yn constituting the vertical video element address gate on the semiconductor substrate 1, and the gate electrodes 91 to 9n are respectively formed by diffusion. Further, the common drain region 10 of MOS type FET elements X1 to Xn constituting the horizontal video element address gate, gate electrodes 111 to 11m, and source regions 121 to 12m, are respectively formed by diffusion. Next, the N<+> type regions 131 to 13m being the source region of the elements Y1 to Ym and being the common drain region of the elements X1 to Xm, and the source regions 1411 to 14mm of each element are formed by diffusion. After that, the common gate electrodes 151 to 15m are provided toward vertical direction of the elements in matrix shape, the entire surface is covered with the SiO2 film 16, the window is opened, forming the charge collection electrodes 171 to 173. Further, on those, the photo conductive materials 19 to 21 and the transparent electrode 22 are coated with lamination.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5548478A JPS54147790A (en) | 1978-05-12 | 1978-05-12 | Solidstate pick up element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5548478A JPS54147790A (en) | 1978-05-12 | 1978-05-12 | Solidstate pick up element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS54147790A true JPS54147790A (en) | 1979-11-19 |
Family
ID=12999888
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5548478A Pending JPS54147790A (en) | 1978-05-12 | 1978-05-12 | Solidstate pick up element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS54147790A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5861663A (en) * | 1981-10-08 | 1983-04-12 | Matsushita Electronics Corp | Manufacture of solid-state image pickup device |
| JPS59191379A (en) * | 1983-04-13 | 1984-10-30 | Mitsubishi Electric Corp | Photoelectric conversion element |
| JP2010040675A (en) * | 2008-08-01 | 2010-02-18 | Nippon Hoso Kyokai <Nhk> | Laminated solid-state imaging apparatus |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5333524A (en) * | 1976-09-10 | 1978-03-29 | Hitachi Ltd | Solid state pickup device |
-
1978
- 1978-05-12 JP JP5548478A patent/JPS54147790A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5333524A (en) * | 1976-09-10 | 1978-03-29 | Hitachi Ltd | Solid state pickup device |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5861663A (en) * | 1981-10-08 | 1983-04-12 | Matsushita Electronics Corp | Manufacture of solid-state image pickup device |
| JPS59191379A (en) * | 1983-04-13 | 1984-10-30 | Mitsubishi Electric Corp | Photoelectric conversion element |
| JP2010040675A (en) * | 2008-08-01 | 2010-02-18 | Nippon Hoso Kyokai <Nhk> | Laminated solid-state imaging apparatus |
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