JPS54131880A - Manufacture of schottky junction element - Google Patents

Manufacture of schottky junction element

Info

Publication number
JPS54131880A
JPS54131880A JP3957778A JP3957778A JPS54131880A JP S54131880 A JPS54131880 A JP S54131880A JP 3957778 A JP3957778 A JP 3957778A JP 3957778 A JP3957778 A JP 3957778A JP S54131880 A JPS54131880 A JP S54131880A
Authority
JP
Japan
Prior art keywords
breakdown voltage
heat treatment
film
junction
prescribed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3957778A
Other languages
English (en)
Inventor
Takanori Kawamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP3957778A priority Critical patent/JPS54131880A/ja
Publication of JPS54131880A publication Critical patent/JPS54131880A/ja
Pending legal-status Critical Current

Links

JP3957778A 1978-04-03 1978-04-03 Manufacture of schottky junction element Pending JPS54131880A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3957778A JPS54131880A (en) 1978-04-03 1978-04-03 Manufacture of schottky junction element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3957778A JPS54131880A (en) 1978-04-03 1978-04-03 Manufacture of schottky junction element

Publications (1)

Publication Number Publication Date
JPS54131880A true JPS54131880A (en) 1979-10-13

Family

ID=12556923

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3957778A Pending JPS54131880A (en) 1978-04-03 1978-04-03 Manufacture of schottky junction element

Country Status (1)

Country Link
JP (1) JPS54131880A (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1503408A1 (en) * 2002-04-30 2005-02-02 Sumitomo Electric Industries, Ltd. Method for measuring withstand voltage of semiconductor epitaxial wafer and semiconductor epitaxial wafer

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51123557A (en) * 1975-04-21 1976-10-28 Mitsubishi Electric Corp Impurity concentration measurement mask of semiconductor base
JPS51137383A (en) * 1975-05-22 1976-11-27 Mitsubishi Electric Corp Semi conductor wafer evaluation
JPS5267958A (en) * 1975-12-03 1977-06-06 Mitsubishi Electric Corp Epitaxial layer evaluation method
JPS5290275A (en) * 1976-01-23 1977-07-29 Toshiba Corp Production of semiconductor device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51123557A (en) * 1975-04-21 1976-10-28 Mitsubishi Electric Corp Impurity concentration measurement mask of semiconductor base
JPS51137383A (en) * 1975-05-22 1976-11-27 Mitsubishi Electric Corp Semi conductor wafer evaluation
JPS5267958A (en) * 1975-12-03 1977-06-06 Mitsubishi Electric Corp Epitaxial layer evaluation method
JPS5290275A (en) * 1976-01-23 1977-07-29 Toshiba Corp Production of semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1503408A1 (en) * 2002-04-30 2005-02-02 Sumitomo Electric Industries, Ltd. Method for measuring withstand voltage of semiconductor epitaxial wafer and semiconductor epitaxial wafer
EP1503408A4 (en) * 2002-04-30 2009-08-12 Sumitomo Electric Industries METHOD FOR MEASURING RESISTANCE VOLTAGE OF EPITAXIAL SEMICONDUCTOR WAFER AND EPITAXIAL SEMICONDUCTOR WAFER

Similar Documents

Publication Publication Date Title
JPS54131880A (en) Manufacture of schottky junction element
JPS57167669A (en) Capacitor and manufacture thereof
JPS5421265A (en) Forming method of semiconductor oxide film
JPS5359385A (en) Production method of semiconductor thermal sensitive element
JPS5244573A (en) Method of mesuring thermal resistance of impatt diode
JPS5380986A (en) Manufacture of semiconductor device
JPS5249868A (en) Method of measuring resistance of oil film
JPS5387666A (en) Anodic oxidation method
JPS52104474A (en) Control method for crystal growth
JPS5320554A (en) Constant current circuit
JPS5376688A (en) Production of semiconductor device
JPS5426667A (en) Measuring method for various parameters of field effect transistor
JPS5477576A (en) Measuring method of high teperature characteristics of semiconductor devices
JPS5414683A (en) Measuring circuit for turn-off time
JPS53145479A (en) Temperature characteristics testing method of semiconductor device
JPS547280A (en) Measuring method for thermal resistance of transistor
JPS5262679A (en) Semiconductor thermistor
JPS53103788A (en) Electronic thermometer
JPS5227378A (en) Wafer test method
JPS5553451A (en) Semiconductor device
JPS5475278A (en) Heat resistance measuring method for impatt diode
JPS5263673A (en) Production of semiconductor device
JPS53145572A (en) Production of semiconductor device
JPS5375853A (en) Measuring method for specific resistance
JPS5363982A (en) Production of silicon gate type mis semiconductor