JPS54131880A - Manufacture of schottky junction element - Google Patents
Manufacture of schottky junction elementInfo
- Publication number
- JPS54131880A JPS54131880A JP3957778A JP3957778A JPS54131880A JP S54131880 A JPS54131880 A JP S54131880A JP 3957778 A JP3957778 A JP 3957778A JP 3957778 A JP3957778 A JP 3957778A JP S54131880 A JPS54131880 A JP S54131880A
- Authority
- JP
- Japan
- Prior art keywords
- breakdown voltage
- heat treatment
- film
- junction
- prescribed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3957778A JPS54131880A (en) | 1978-04-03 | 1978-04-03 | Manufacture of schottky junction element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3957778A JPS54131880A (en) | 1978-04-03 | 1978-04-03 | Manufacture of schottky junction element |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS54131880A true JPS54131880A (en) | 1979-10-13 |
Family
ID=12556923
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3957778A Pending JPS54131880A (en) | 1978-04-03 | 1978-04-03 | Manufacture of schottky junction element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS54131880A (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1503408A1 (en) * | 2002-04-30 | 2005-02-02 | Sumitomo Electric Industries, Ltd. | Method for measuring withstand voltage of semiconductor epitaxial wafer and semiconductor epitaxial wafer |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS51123557A (en) * | 1975-04-21 | 1976-10-28 | Mitsubishi Electric Corp | Impurity concentration measurement mask of semiconductor base |
JPS51137383A (en) * | 1975-05-22 | 1976-11-27 | Mitsubishi Electric Corp | Semi conductor wafer evaluation |
JPS5267958A (en) * | 1975-12-03 | 1977-06-06 | Mitsubishi Electric Corp | Epitaxial layer evaluation method |
JPS5290275A (en) * | 1976-01-23 | 1977-07-29 | Toshiba Corp | Production of semiconductor device |
-
1978
- 1978-04-03 JP JP3957778A patent/JPS54131880A/ja active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS51123557A (en) * | 1975-04-21 | 1976-10-28 | Mitsubishi Electric Corp | Impurity concentration measurement mask of semiconductor base |
JPS51137383A (en) * | 1975-05-22 | 1976-11-27 | Mitsubishi Electric Corp | Semi conductor wafer evaluation |
JPS5267958A (en) * | 1975-12-03 | 1977-06-06 | Mitsubishi Electric Corp | Epitaxial layer evaluation method |
JPS5290275A (en) * | 1976-01-23 | 1977-07-29 | Toshiba Corp | Production of semiconductor device |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1503408A1 (en) * | 2002-04-30 | 2005-02-02 | Sumitomo Electric Industries, Ltd. | Method for measuring withstand voltage of semiconductor epitaxial wafer and semiconductor epitaxial wafer |
EP1503408A4 (en) * | 2002-04-30 | 2009-08-12 | Sumitomo Electric Industries | METHOD FOR MEASURING RESISTANCE VOLTAGE OF EPITAXIAL SEMICONDUCTOR WAFER AND EPITAXIAL SEMICONDUCTOR WAFER |
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