JPS5477576A - Measuring method of high teperature characteristics of semiconductor devices - Google Patents
Measuring method of high teperature characteristics of semiconductor devicesInfo
- Publication number
- JPS5477576A JPS5477576A JP14529077A JP14529077A JPS5477576A JP S5477576 A JPS5477576 A JP S5477576A JP 14529077 A JP14529077 A JP 14529077A JP 14529077 A JP14529077 A JP 14529077A JP S5477576 A JPS5477576 A JP S5477576A
- Authority
- JP
- Japan
- Prior art keywords
- measurement
- specified
- bonding parts
- teperature
- semiconductor devices
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Testing Of Individual Semiconductor Devices (AREA)
Abstract
PURPOSE: To make possible measurement of high temperature characteristics without thermostatic bath by beforehand applying specified power to raise the temperature of bonding parts to a specified one than cutting off the power.
CONSTITUTION: Specified power is applied to the bonding parts of the semiconductor device to be measured to rise the temperature of the bonding parts up to a specified value from the inside. If the measurement is made after making the temperature conditions at the measurement nearly the same, the leakage current increases and therefore the semiconductor device may be screened substantially down to the leakage current value of less then 10nA of transistors, thus the measurement of high temperature characteristics may be performed only with a general automatic screening machine and the accuracy thereof is good.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14529077A JPS5477576A (en) | 1977-12-02 | 1977-12-02 | Measuring method of high teperature characteristics of semiconductor devices |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14529077A JPS5477576A (en) | 1977-12-02 | 1977-12-02 | Measuring method of high teperature characteristics of semiconductor devices |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5477576A true JPS5477576A (en) | 1979-06-21 |
Family
ID=15381712
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14529077A Pending JPS5477576A (en) | 1977-12-02 | 1977-12-02 | Measuring method of high teperature characteristics of semiconductor devices |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5477576A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5838876A (en) * | 1981-08-31 | 1983-03-07 | Nec Corp | Testing of semiconductor device |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5473579A (en) * | 1977-11-24 | 1979-06-12 | Hitachi Ltd | Testing method of electronic parts |
-
1977
- 1977-12-02 JP JP14529077A patent/JPS5477576A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5473579A (en) * | 1977-11-24 | 1979-06-12 | Hitachi Ltd | Testing method of electronic parts |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5838876A (en) * | 1981-08-31 | 1983-03-07 | Nec Corp | Testing of semiconductor device |
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