JPS5477576A - Measuring method of high teperature characteristics of semiconductor devices - Google Patents

Measuring method of high teperature characteristics of semiconductor devices

Info

Publication number
JPS5477576A
JPS5477576A JP14529077A JP14529077A JPS5477576A JP S5477576 A JPS5477576 A JP S5477576A JP 14529077 A JP14529077 A JP 14529077A JP 14529077 A JP14529077 A JP 14529077A JP S5477576 A JPS5477576 A JP S5477576A
Authority
JP
Japan
Prior art keywords
measurement
specified
bonding parts
teperature
semiconductor devices
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14529077A
Other languages
Japanese (ja)
Inventor
Koji Takeda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP14529077A priority Critical patent/JPS5477576A/en
Publication of JPS5477576A publication Critical patent/JPS5477576A/en
Pending legal-status Critical Current

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Landscapes

  • Testing Of Individual Semiconductor Devices (AREA)

Abstract

PURPOSE: To make possible measurement of high temperature characteristics without thermostatic bath by beforehand applying specified power to raise the temperature of bonding parts to a specified one than cutting off the power.
CONSTITUTION: Specified power is applied to the bonding parts of the semiconductor device to be measured to rise the temperature of the bonding parts up to a specified value from the inside. If the measurement is made after making the temperature conditions at the measurement nearly the same, the leakage current increases and therefore the semiconductor device may be screened substantially down to the leakage current value of less then 10nA of transistors, thus the measurement of high temperature characteristics may be performed only with a general automatic screening machine and the accuracy thereof is good.
COPYRIGHT: (C)1979,JPO&Japio
JP14529077A 1977-12-02 1977-12-02 Measuring method of high teperature characteristics of semiconductor devices Pending JPS5477576A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14529077A JPS5477576A (en) 1977-12-02 1977-12-02 Measuring method of high teperature characteristics of semiconductor devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14529077A JPS5477576A (en) 1977-12-02 1977-12-02 Measuring method of high teperature characteristics of semiconductor devices

Publications (1)

Publication Number Publication Date
JPS5477576A true JPS5477576A (en) 1979-06-21

Family

ID=15381712

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14529077A Pending JPS5477576A (en) 1977-12-02 1977-12-02 Measuring method of high teperature characteristics of semiconductor devices

Country Status (1)

Country Link
JP (1) JPS5477576A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5838876A (en) * 1981-08-31 1983-03-07 Nec Corp Testing of semiconductor device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5473579A (en) * 1977-11-24 1979-06-12 Hitachi Ltd Testing method of electronic parts

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5473579A (en) * 1977-11-24 1979-06-12 Hitachi Ltd Testing method of electronic parts

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5838876A (en) * 1981-08-31 1983-03-07 Nec Corp Testing of semiconductor device

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