JPS5686367A - Measuring method for characteristic of electronic circuit - Google Patents

Measuring method for characteristic of electronic circuit

Info

Publication number
JPS5686367A
JPS5686367A JP16326379A JP16326379A JPS5686367A JP S5686367 A JPS5686367 A JP S5686367A JP 16326379 A JP16326379 A JP 16326379A JP 16326379 A JP16326379 A JP 16326379A JP S5686367 A JPS5686367 A JP S5686367A
Authority
JP
Japan
Prior art keywords
lead wire
temperature
characteristic
external lead
electronic circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16326379A
Other languages
Japanese (ja)
Other versions
JPS6321875B2 (en
Inventor
Koichi Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP16326379A priority Critical patent/JPS5686367A/en
Publication of JPS5686367A publication Critical patent/JPS5686367A/en
Publication of JPS6321875B2 publication Critical patent/JPS6321875B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Testing Of Individual Semiconductor Devices (AREA)
  • Tests Of Electronic Circuits (AREA)

Abstract

PURPOSE: To increase the accuracy of measurement for the characteristic of the part to be evaluated, by irradiating the light to the speicified part of an electronic circuit and thus varying the temperature of the specified part.
CONSTITUTION: The terminal 4 functions as an electrode of a resistance contact with a semiconductor substrate and is also connected metallurgically to an external lead wire. The differential temperature change characteristic is measured for the voltage between the gate and the source while being drived by the same drain current and in the state in which the laser beam or the infrared ray is irraditated to the external lead wire. In other words, when the light is irradiated to the external lead wire, the FET chip connected metallurgically to the lead wire via the terminal 4 has its temperature increased suddenly. Thus the temperature of the chip is measured in an extremely high accuracy in the general bias state corresponding to the amount of change of the gate-source voltage of the FET at the single side.
COPYRIGHT: (C)1981,JPO&Japio
JP16326379A 1979-12-14 1979-12-14 Measuring method for characteristic of electronic circuit Granted JPS5686367A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16326379A JPS5686367A (en) 1979-12-14 1979-12-14 Measuring method for characteristic of electronic circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16326379A JPS5686367A (en) 1979-12-14 1979-12-14 Measuring method for characteristic of electronic circuit

Publications (2)

Publication Number Publication Date
JPS5686367A true JPS5686367A (en) 1981-07-14
JPS6321875B2 JPS6321875B2 (en) 1988-05-09

Family

ID=15770475

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16326379A Granted JPS5686367A (en) 1979-12-14 1979-12-14 Measuring method for characteristic of electronic circuit

Country Status (1)

Country Link
JP (1) JPS5686367A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58162871A (en) * 1982-03-23 1983-09-27 Seiko Instr & Electronics Ltd Measuring method of temperature characteristics of crystal oscillator
JPH06300824A (en) * 1993-04-13 1994-10-28 Nec Corp Method and equipment for inspecting internal mutual wiring of semiconductor integrated circuit
JPH08160095A (en) * 1994-08-31 1996-06-21 Nec Corp Method and device for testing wiring on semiconductor integrated circuit chip
JPH09145795A (en) * 1995-11-21 1997-06-06 Nec Corp Line current observation method and inspection method and device of semiconductor device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4941855A (en) * 1972-05-01 1974-04-19

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4941855A (en) * 1972-05-01 1974-04-19

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58162871A (en) * 1982-03-23 1983-09-27 Seiko Instr & Electronics Ltd Measuring method of temperature characteristics of crystal oscillator
JPH06300824A (en) * 1993-04-13 1994-10-28 Nec Corp Method and equipment for inspecting internal mutual wiring of semiconductor integrated circuit
JPH08160095A (en) * 1994-08-31 1996-06-21 Nec Corp Method and device for testing wiring on semiconductor integrated circuit chip
JPH09145795A (en) * 1995-11-21 1997-06-06 Nec Corp Line current observation method and inspection method and device of semiconductor device

Also Published As

Publication number Publication date
JPS6321875B2 (en) 1988-05-09

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