JPS5475278A - Heat resistance measuring method for impatt diode - Google Patents

Heat resistance measuring method for impatt diode

Info

Publication number
JPS5475278A
JPS5475278A JP14309677A JP14309677A JPS5475278A JP S5475278 A JPS5475278 A JP S5475278A JP 14309677 A JP14309677 A JP 14309677A JP 14309677 A JP14309677 A JP 14309677A JP S5475278 A JPS5475278 A JP S5475278A
Authority
JP
Japan
Prior art keywords
impatt diode
space charge
temperature
current
heat resistance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14309677A
Other languages
Japanese (ja)
Inventor
Kazuo Nishitani
Hiroshi Sawano
Takashi Ishii
Shigeru Mitsui
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP14309677A priority Critical patent/JPS5475278A/en
Publication of JPS5475278A publication Critical patent/JPS5475278A/en
Pending legal-status Critical Current

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Abstract

PURPOSE: To secure the proper evaluation for the heat resistance of the impatt diode whose depletion layer's width varies by the temperature and current.
CONSTITUTION: The lead-type GaAs impatt diode is used to obtain the backward voltage and the current property group by maintaining the constant levels for various temperatures. According to this property curve group, the differential resistance value is obtained for temperatures T1WT3 when the backward current features fixed value I0, and this obtained value is equivalent to the space charge resistance. Thus, the space charge resistance characteristics can be obtained at I0. Here, the space charge resistance is measured when reverse current I0 flowing DC input is applied to the impatt diode, so temperature T of the impatt diode is obtained based on the temperature-to-space charge resistance characteristics. Then heat resistance R = (T-T0)/V0I0 can be obtained according to room temperature T plus DC input power I0V0. As a result, R can be measured accurately even though the depletion layer has a big change.
COPYRIGHT: (C)1979,JPO&Japio
JP14309677A 1977-11-28 1977-11-28 Heat resistance measuring method for impatt diode Pending JPS5475278A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14309677A JPS5475278A (en) 1977-11-28 1977-11-28 Heat resistance measuring method for impatt diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14309677A JPS5475278A (en) 1977-11-28 1977-11-28 Heat resistance measuring method for impatt diode

Publications (1)

Publication Number Publication Date
JPS5475278A true JPS5475278A (en) 1979-06-15

Family

ID=15330808

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14309677A Pending JPS5475278A (en) 1977-11-28 1977-11-28 Heat resistance measuring method for impatt diode

Country Status (1)

Country Link
JP (1) JPS5475278A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103869233A (en) * 2014-04-01 2014-06-18 北京工业大学 Method for measuring thin-film heat resistance inside semi-conductor components
CN111693840A (en) * 2020-06-18 2020-09-22 山东宝乘电子有限公司 Method for testing thermal resistance of Schottky diode by utilizing reverse characteristic

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103869233A (en) * 2014-04-01 2014-06-18 北京工业大学 Method for measuring thin-film heat resistance inside semi-conductor components
CN111693840A (en) * 2020-06-18 2020-09-22 山东宝乘电子有限公司 Method for testing thermal resistance of Schottky diode by utilizing reverse characteristic

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