JPS54114178A - Vacuum epitaxial growing method - Google Patents

Vacuum epitaxial growing method

Info

Publication number
JPS54114178A
JPS54114178A JP2190978A JP2190978A JPS54114178A JP S54114178 A JPS54114178 A JP S54114178A JP 2190978 A JP2190978 A JP 2190978A JP 2190978 A JP2190978 A JP 2190978A JP S54114178 A JPS54114178 A JP S54114178A
Authority
JP
Japan
Prior art keywords
gas
jetted
film
epitaxial
reproducibility
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2190978A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6136371B2 (enrdf_load_stackoverflow
Inventor
Junji Sakurai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP2190978A priority Critical patent/JPS54114178A/ja
Publication of JPS54114178A publication Critical patent/JPS54114178A/ja
Publication of JPS6136371B2 publication Critical patent/JPS6136371B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
JP2190978A 1978-02-27 1978-02-27 Vacuum epitaxial growing method Granted JPS54114178A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2190978A JPS54114178A (en) 1978-02-27 1978-02-27 Vacuum epitaxial growing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2190978A JPS54114178A (en) 1978-02-27 1978-02-27 Vacuum epitaxial growing method

Publications (2)

Publication Number Publication Date
JPS54114178A true JPS54114178A (en) 1979-09-06
JPS6136371B2 JPS6136371B2 (enrdf_load_stackoverflow) 1986-08-18

Family

ID=12068211

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2190978A Granted JPS54114178A (en) 1978-02-27 1978-02-27 Vacuum epitaxial growing method

Country Status (1)

Country Link
JP (1) JPS54114178A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57173933A (en) * 1981-04-17 1982-10-26 Nippon Telegr & Teleph Corp <Ntt> Growing method for molecular beam
JPS63152118A (ja) * 1986-12-16 1988-06-24 Fujitsu Ltd 半導体装置の製造方法
JP2006218559A (ja) * 2005-02-09 2006-08-24 Tokyo Univ Of Science 粒体噴射装置

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57173933A (en) * 1981-04-17 1982-10-26 Nippon Telegr & Teleph Corp <Ntt> Growing method for molecular beam
JPS63152118A (ja) * 1986-12-16 1988-06-24 Fujitsu Ltd 半導体装置の製造方法
JP2006218559A (ja) * 2005-02-09 2006-08-24 Tokyo Univ Of Science 粒体噴射装置

Also Published As

Publication number Publication date
JPS6136371B2 (enrdf_load_stackoverflow) 1986-08-18

Similar Documents

Publication Publication Date Title
JPS54114178A (en) Vacuum epitaxial growing method
JPS5434756A (en) Vapor-phase growth method for semiconductor
JPS63237517A (ja) ３−５族化合物膜の選択形成方法
JPS5271171A (en) Production of epitaxial wafer
JPS5737827A (en) Manufacture of semiconductor device
JPS53126263A (en) Method of epitaxially growing gallium arsenide layer on gallium arsenide body
GB1425102A (en) Methods of etching gallium arsenide substrates and epitaxially depositing gallium arsenide thereon
JPS54128283A (en) Manufacture of semiconductor device
JPS5649520A (en) Vapor growth of compound semiconductor
JPS56162841A (en) Forming method for insulating film of compound semiconductor
JPS6421074A (en) Method for selectively growing thin metallic film
JPS6451620A (en) Vapor growth method
JPS5670630A (en) Manufacture of compound semiconductor by gas phase epitaxial growth
JPS568814A (en) Epitaxial growth of silicon under reduced pressure
JPS5671942A (en) Oxide film coating of compound semiconductor device
JPS52120764A (en) Manufacture of semiconductor device on insulator substrate
JPS5267260A (en) Manufacture of iii-v group compounds semiconductor epitaxial laminatio n crystal
JPS5493357A (en) Growing method of polycrystal silicon
JPS5376752A (en) Production of semionductor device
JPS53123660A (en) Epitaxial growth method
JPS56165354A (en) Semiconductor device
JPS6428374A (en) Method for selectively growing tungsten
JPS5534482A (en) Manufacturing method for semiconductor laser
JPS5583227A (en) Epitaxial growing
JPS57201015A (en) Manufacture of semiconductor device