JPS6136371B2 - - Google Patents
Info
- Publication number
- JPS6136371B2 JPS6136371B2 JP2190978A JP2190978A JPS6136371B2 JP S6136371 B2 JPS6136371 B2 JP S6136371B2 JP 2190978 A JP2190978 A JP 2190978A JP 2190978 A JP2190978 A JP 2190978A JP S6136371 B2 JPS6136371 B2 JP S6136371B2
- Authority
- JP
- Japan
- Prior art keywords
- gas
- reaction gas
- injected
- epitaxial growth
- epitaxially grown
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2190978A JPS54114178A (en) | 1978-02-27 | 1978-02-27 | Vacuum epitaxial growing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2190978A JPS54114178A (en) | 1978-02-27 | 1978-02-27 | Vacuum epitaxial growing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS54114178A JPS54114178A (en) | 1979-09-06 |
| JPS6136371B2 true JPS6136371B2 (enrdf_load_stackoverflow) | 1986-08-18 |
Family
ID=12068211
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2190978A Granted JPS54114178A (en) | 1978-02-27 | 1978-02-27 | Vacuum epitaxial growing method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS54114178A (enrdf_load_stackoverflow) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57173933A (en) * | 1981-04-17 | 1982-10-26 | Nippon Telegr & Teleph Corp <Ntt> | Growing method for molecular beam |
| JPS63152118A (ja) * | 1986-12-16 | 1988-06-24 | Fujitsu Ltd | 半導体装置の製造方法 |
| JP4719478B2 (ja) * | 2005-02-09 | 2011-07-06 | 学校法人東京理科大学 | 粒体噴射装置 |
-
1978
- 1978-02-27 JP JP2190978A patent/JPS54114178A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS54114178A (en) | 1979-09-06 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR100272891B1 (ko) | 저온, 고압 상태에서의 실리콘 증착방법 | |
| US4089992A (en) | Method for depositing continuous pinhole free silicon nitride films and products produced thereby | |
| US4063974A (en) | Planar reactive evaporation method for the deposition of compound semiconducting films | |
| JP2948414B2 (ja) | 基板上にＧｅを堆積させる方法および半導体デバイスの製造方法 | |
| JP3545459B2 (ja) | 低温における結晶質炭化ケイ素コーティングの作成方法 | |
| JPH06204149A (ja) | 化合物半導体製造方法 | |
| JPH01162326A (ja) | β−炭化シリコン層の製造方法 | |
| CN117153671B (zh) | 碳化硅衬底的外延生长方法以及碳化硅外延片 | |
| US3941647A (en) | Method of producing epitaxially semiconductor layers | |
| JP2014058411A (ja) | エピタキシャル炭化珪素ウエハの製造方法 | |
| US5036022A (en) | Metal organic vapor phase epitaxial growth of group III-V semiconductor materials | |
| US3853974A (en) | Method of producing a hollow body of semiconductor material | |
| JPH0547665A (ja) | 気相成長方法 | |
| JP2002539327A (ja) | 基板表面への金属酸化物の化学的気相成長法による成膜方法および装置 | |
| JPH02217473A (ja) | 窒化アルミニウムフィルムの形成方法 | |
| JPS6136371B2 (enrdf_load_stackoverflow) | ||
| US4895737A (en) | Metal-organic chemical vapor deposition | |
| JPH0654764B2 (ja) | 半絶縁性ガリウムヒ素形成方法 | |
| CA1313343C (en) | Metal organic vapor phase epitaxial growth of group iii-v semiconductor materials | |
| JPH0547666A (ja) | 気相成長装置 | |
| JP2822756B2 (ja) | 気相成長装置およびその薄膜形成方法 | |
| CN113005521A (zh) | 气相外延方法 | |
| JPH0645257A (ja) | 半導体薄膜形成方法 | |
| JP3112796B2 (ja) | 化学気相成長方法 | |
| JP2649221B2 (ja) | 堆積膜形成法 |