JPS54107228A - Memory circuit - Google Patents
Memory circuitInfo
- Publication number
- JPS54107228A JPS54107228A JP1442678A JP1442678A JPS54107228A JP S54107228 A JPS54107228 A JP S54107228A JP 1442678 A JP1442678 A JP 1442678A JP 1442678 A JP1442678 A JP 1442678A JP S54107228 A JPS54107228 A JP S54107228A
- Authority
- JP
- Japan
- Prior art keywords
- data
- inversional
- read
- true
- buses
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000000295 complement effect Effects 0.000 abstract 2
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
- G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
- G11C11/418—Address circuits
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Static Random-Access Memory (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1442678A JPS54107228A (en) | 1978-02-09 | 1978-02-09 | Memory circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1442678A JPS54107228A (en) | 1978-02-09 | 1978-02-09 | Memory circuit |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS54107228A true JPS54107228A (en) | 1979-08-22 |
JPS6128198B2 JPS6128198B2 (enrdf_load_stackoverflow) | 1986-06-28 |
Family
ID=11860689
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1442678A Granted JPS54107228A (en) | 1978-02-09 | 1978-02-09 | Memory circuit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS54107228A (enrdf_load_stackoverflow) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5948892A (ja) * | 1982-09-14 | 1984-03-21 | Matsushita Electric Ind Co Ltd | 半導体記憶装置 |
JPS5963482U (ja) * | 1982-10-21 | 1984-04-26 | シャープ株式会社 | キヤビネツトの係止装置 |
JPS6076085A (ja) * | 1983-09-30 | 1985-04-30 | Toshiba Corp | 半導体記憶装置 |
JPS63201986A (ja) * | 1987-02-18 | 1988-08-22 | Matsushita Electric Ind Co Ltd | 2ポ−トメモリ |
JPH01205790A (ja) * | 1988-02-10 | 1989-08-18 | Ricoh Co Ltd | スタティックram |
JPH06342593A (ja) * | 1990-09-05 | 1994-12-13 | Internatl Business Mach Corp <Ibm> | マルチポート・メモリセル |
WO2003030138A1 (fr) * | 2001-09-28 | 2003-04-10 | Sony Corporation | Memoire d'affichage, circuit d'attaque, ecran d'affichage et appareil d'information cellulaire |
JP2008112537A (ja) * | 2006-10-31 | 2008-05-15 | Denso Corp | 半導体メモリ回路装置 |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6579056B2 (ja) | 2016-07-29 | 2019-09-25 | 株式会社Sumco | ウェーハの両面研磨方法 |
-
1978
- 1978-02-09 JP JP1442678A patent/JPS54107228A/ja active Granted
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5948892A (ja) * | 1982-09-14 | 1984-03-21 | Matsushita Electric Ind Co Ltd | 半導体記憶装置 |
JPS5963482U (ja) * | 1982-10-21 | 1984-04-26 | シャープ株式会社 | キヤビネツトの係止装置 |
JPS6076085A (ja) * | 1983-09-30 | 1985-04-30 | Toshiba Corp | 半導体記憶装置 |
JPS63201986A (ja) * | 1987-02-18 | 1988-08-22 | Matsushita Electric Ind Co Ltd | 2ポ−トメモリ |
JPH01205790A (ja) * | 1988-02-10 | 1989-08-18 | Ricoh Co Ltd | スタティックram |
JPH06342593A (ja) * | 1990-09-05 | 1994-12-13 | Internatl Business Mach Corp <Ibm> | マルチポート・メモリセル |
WO2003030138A1 (fr) * | 2001-09-28 | 2003-04-10 | Sony Corporation | Memoire d'affichage, circuit d'attaque, ecran d'affichage et appareil d'information cellulaire |
US7176864B2 (en) | 2001-09-28 | 2007-02-13 | Sony Corporation | Display memory, driver circuit, display, and cellular information apparatus |
KR100908793B1 (ko) * | 2001-09-28 | 2009-07-22 | 소니 가부시끼 가이샤 | 표시 메모리, 드라이버 회로, 디스플레이 및 휴대 정보 장치 |
US9123308B2 (en) | 2001-09-28 | 2015-09-01 | Sony Corporation | Display memory, driver circuit, display, and portable information device |
JP2008112537A (ja) * | 2006-10-31 | 2008-05-15 | Denso Corp | 半導体メモリ回路装置 |
Also Published As
Publication number | Publication date |
---|---|
JPS6128198B2 (enrdf_load_stackoverflow) | 1986-06-28 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS61142592A (ja) | 半導体記憶装置 | |
JPS54107228A (en) | Memory circuit | |
JPS54139343A (en) | Clock-system memory | |
KR880006698A (ko) | 씨모오스 반도체 메모리장치의 입출력 회로 | |
KR950034795A (ko) | 스태틱램 메모리셀 | |
JPS6443894A (en) | Semiconductor memory | |
JPS56143592A (en) | Semiconductor memory device | |
JPS56114197A (en) | Semiconductor memory device | |
JPS57130291A (en) | Semiconductor nonvolatile read-only storage device | |
KR850008238A (ko) | 반도체 기억장치 | |
JPS57103189A (en) | Semiconductor memory | |
JPS55101185A (en) | Semiconductor memory device | |
JPS6431253A (en) | Data transferring system | |
JPS57208686A (en) | Semiconductor storage device | |
JPS62107496A (ja) | 半導体メモリセル | |
JPS61269288A (ja) | 記憶素子モジユ−ル | |
JP3057693B2 (ja) | 半導体メモリ | |
JPH04102295A (ja) | 半導体記憶装置 | |
JPS6022798A (ja) | 半導体記憶装置 | |
JPS57135498A (en) | Semiconductor memory | |
JPS57103531A (en) | Memory controller | |
JPS5538668A (en) | Memory unit | |
JPS6476487A (en) | Serial access memory | |
JPS5730165A (en) | Random access memory | |
FR2337917A1 (fr) | Memoire a acces direct en circuit integre |