JPS5396720A - Solid image pickup element - Google Patents

Solid image pickup element

Info

Publication number
JPS5396720A
JPS5396720A JP1071277A JP1071277A JPS5396720A JP S5396720 A JPS5396720 A JP S5396720A JP 1071277 A JP1071277 A JP 1071277A JP 1071277 A JP1071277 A JP 1071277A JP S5396720 A JPS5396720 A JP S5396720A
Authority
JP
Japan
Prior art keywords
image pickup
pickup element
solid image
semiconductor
area
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1071277A
Other languages
English (en)
Other versions
JPS5730349B2 (ja
Inventor
Norio Koike
Kayao Takemoto
Seiji Kubo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP1071277A priority Critical patent/JPS5396720A/ja
Priority to DE2804466A priority patent/DE2804466C3/de
Priority to US05/874,939 priority patent/US4148051A/en
Priority to FR7802995A priority patent/FR2379914A1/fr
Priority to GB4467/78A priority patent/GB1594185A/en
Priority to NL7801284A priority patent/NL7801284A/xx
Publication of JPS5396720A publication Critical patent/JPS5396720A/ja
Publication of JPS5730349B2 publication Critical patent/JPS5730349B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/112—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor
    • H01L31/113—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor
    • H01L31/1136—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor the device being a metal-insulator-semiconductor field-effect transistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/823406—Combination of charge coupled devices, i.e. CCD, or BBD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14645—Colour imagers

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electromagnetism (AREA)
  • Manufacturing & Machinery (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Light Receiving Elements (AREA)
JP1071277A 1977-02-04 1977-02-04 Solid image pickup element Granted JPS5396720A (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP1071277A JPS5396720A (en) 1977-02-04 1977-02-04 Solid image pickup element
DE2804466A DE2804466C3 (de) 1977-02-04 1978-02-02 Festkörper-Bildaufnahmeeinrichtung
US05/874,939 US4148051A (en) 1977-02-04 1978-02-03 Solid-state imaging device
FR7802995A FR2379914A1 (fr) 1977-02-04 1978-02-03 Dispositif de formation d'image a semi-conducteurs
GB4467/78A GB1594185A (en) 1977-02-04 1978-02-03 Solid-state imaging devices
NL7801284A NL7801284A (nl) 1977-02-04 1978-02-03 Vaste stof beeldopneeminrichting.

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1071277A JPS5396720A (en) 1977-02-04 1977-02-04 Solid image pickup element

Publications (2)

Publication Number Publication Date
JPS5396720A true JPS5396720A (en) 1978-08-24
JPS5730349B2 JPS5730349B2 (ja) 1982-06-28

Family

ID=11757905

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1071277A Granted JPS5396720A (en) 1977-02-04 1977-02-04 Solid image pickup element

Country Status (6)

Country Link
US (1) US4148051A (ja)
JP (1) JPS5396720A (ja)
DE (1) DE2804466C3 (ja)
FR (1) FR2379914A1 (ja)
GB (1) GB1594185A (ja)
NL (1) NL7801284A (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6212962U (ja) * 1985-07-05 1987-01-26
WO2007094493A1 (ja) * 2006-02-14 2007-08-23 National Institute Of Advanced Industrial Science And Technology 光電界効果トランジスタ、及びそれを用いた集積型フォトディテクタ

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6017196B2 (ja) * 1978-01-23 1985-05-01 株式会社日立製作所 固体撮像素子
US4198646A (en) * 1978-10-13 1980-04-15 Hughes Aircraft Company Monolithic imager for near-IR
JPS6033340B2 (ja) * 1979-02-19 1985-08-02 株式会社日立製作所 固体撮像装置
JPS6033342B2 (ja) * 1979-06-04 1985-08-02 株式会社日立製作所 固体撮像装置
US4266237A (en) * 1979-09-07 1981-05-05 Honeywell Inc. Semiconductor apparatus
JPS606147B2 (ja) * 1979-12-07 1985-02-15 株式会社東芝 固体撮像装置
US4365262A (en) * 1980-11-26 1982-12-21 Handotai Kenkyu Shinkokai Semiconductor image sensor
DE3715674A1 (de) * 1987-05-11 1988-12-01 Messerschmitt Boelkow Blohm Halbleiter mit kapazitiver auslese der ladungstraeger und integrierter gleichspannungszufuehrung
US5307169A (en) * 1991-05-07 1994-04-26 Olympus Optical Co., Ltd. Solid-state imaging device using high relative dielectric constant material as insulating film
JP4604307B2 (ja) * 2000-01-27 2011-01-05 ソニー株式会社 撮像装置とその製造方法及びカメラシステム
DE102005007358B4 (de) * 2005-02-17 2008-05-08 Austriamicrosystems Ag Lichtempfindliches Bauelement
US8120078B2 (en) * 2007-11-19 2012-02-21 Infineon Technologies Ag Photodiode structure
US8247854B2 (en) * 2009-10-08 2012-08-21 Electronics And Telecommunications Research Institute CMOS image sensor
JP2014199898A (ja) * 2013-03-11 2014-10-23 ソニー株式会社 固体撮像素子および製造方法、並びに、電子機器

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3601668A (en) * 1969-11-07 1971-08-24 Fairchild Camera Instr Co Surface depletion layer photodevice
US3676715A (en) * 1970-06-26 1972-07-11 Bell Telephone Labor Inc Semiconductor apparatus for image sensing and dynamic storage
CA948331A (en) * 1971-03-16 1974-05-28 Michael F. Tompsett Charge transfer imaging devices
US3812518A (en) * 1973-01-02 1974-05-21 Gen Electric Photodiode with patterned structure
US3983573A (en) * 1974-03-12 1976-09-28 Nippon Electric Company, Ltd. Charge-coupled linear image sensing device
JPS5937629B2 (ja) * 1975-01-30 1984-09-11 ソニー株式会社 固体撮像体
JPS5310433B2 (ja) * 1975-03-10 1978-04-13
GB1562287A (en) * 1976-03-27 1980-03-12 Marconi Co Ltd Imaging device

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6212962U (ja) * 1985-07-05 1987-01-26
WO2007094493A1 (ja) * 2006-02-14 2007-08-23 National Institute Of Advanced Industrial Science And Technology 光電界効果トランジスタ、及びそれを用いた集積型フォトディテクタ
GB2445313A (en) * 2006-02-14 2008-07-02 Nat Inst Of Advanced Ind Scien Photo field effect transitor and intergrated photodetector using same
US7759698B2 (en) 2006-02-14 2010-07-20 National Institute Of Advanced Industrial Science And Technology Photo-field effect transistor and integrated photodetector using the same
GB2445313B (en) * 2006-02-14 2011-03-23 Nat Inst Of Advanced Ind Scien Photo field effect transistor and integrated photodetector using same
JP4963120B2 (ja) * 2006-02-14 2012-06-27 独立行政法人産業技術総合研究所 光電界効果トランジスタ，及びそれを用いた集積型フォトディテクタ

Also Published As

Publication number Publication date
FR2379914A1 (fr) 1978-09-01
JPS5730349B2 (ja) 1982-06-28
FR2379914B1 (ja) 1983-02-11
US4148051A (en) 1979-04-03
NL7801284A (nl) 1978-08-08
DE2804466B2 (de) 1980-02-14
DE2804466C3 (de) 1980-10-09
DE2804466A1 (de) 1978-08-10
GB1594185A (en) 1981-07-30

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