NL7801284A - Vaste stof beeldopneeminrichting. - Google Patents

Vaste stof beeldopneeminrichting.

Info

Publication number
NL7801284A
NL7801284A NL7801284A NL7801284A NL7801284A NL 7801284 A NL7801284 A NL 7801284A NL 7801284 A NL7801284 A NL 7801284A NL 7801284 A NL7801284 A NL 7801284A NL 7801284 A NL7801284 A NL 7801284A
Authority
NL
Netherlands
Prior art keywords
recording device
image recording
solid image
solid
recording
Prior art date
Application number
NL7801284A
Other languages
English (en)
Dutch (nl)
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of NL7801284A publication Critical patent/NL7801284A/xx

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/112Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor
    • H01L31/113Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor
    • H01L31/1136Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor the device being a metal-insulator-semiconductor field-effect transistor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232Field-effect technology
    • H01L21/8234MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/823406Combination of charge coupled devices, i.e. CCD, or BBD
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14643Photodiode arrays; MOS imagers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14643Photodiode arrays; MOS imagers
    • H01L27/14645Colour imagers

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electromagnetism (AREA)
  • Manufacturing & Machinery (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Light Receiving Elements (AREA)
NL7801284A 1977-02-04 1978-02-03 Vaste stof beeldopneeminrichting. NL7801284A (nl)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1071277A JPS5396720A (en) 1977-02-04 1977-02-04 Solid image pickup element

Publications (1)

Publication Number Publication Date
NL7801284A true NL7801284A (nl) 1978-08-08

Family

ID=11757905

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7801284A NL7801284A (nl) 1977-02-04 1978-02-03 Vaste stof beeldopneeminrichting.

Country Status (6)

Country Link
US (1) US4148051A (ja)
JP (1) JPS5396720A (ja)
DE (1) DE2804466C3 (ja)
FR (1) FR2379914A1 (ja)
GB (1) GB1594185A (ja)
NL (1) NL7801284A (ja)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6017196B2 (ja) * 1978-01-23 1985-05-01 株式会社日立製作所 固体撮像素子
US4198646A (en) * 1978-10-13 1980-04-15 Hughes Aircraft Company Monolithic imager for near-IR
JPS6033340B2 (ja) * 1979-02-19 1985-08-02 株式会社日立製作所 固体撮像装置
JPS6033342B2 (ja) * 1979-06-04 1985-08-02 株式会社日立製作所 固体撮像装置
US4266237A (en) * 1979-09-07 1981-05-05 Honeywell Inc. Semiconductor apparatus
JPS606147B2 (ja) * 1979-12-07 1985-02-15 株式会社東芝 固体撮像装置
US4365262A (en) * 1980-11-26 1982-12-21 Handotai Kenkyu Shinkokai Semiconductor image sensor
JPS6212962U (ja) * 1985-07-05 1987-01-26
DE3715674A1 (de) * 1987-05-11 1988-12-01 Messerschmitt Boelkow Blohm Halbleiter mit kapazitiver auslese der ladungstraeger und integrierter gleichspannungszufuehrung
US5307169A (en) * 1991-05-07 1994-04-26 Olympus Optical Co., Ltd. Solid-state imaging device using high relative dielectric constant material as insulating film
JP4604307B2 (ja) * 2000-01-27 2011-01-05 ソニー株式会社 撮像装置とその製造方法及びカメラシステム
DE102005007358B4 (de) * 2005-02-17 2008-05-08 Austriamicrosystems Ag Lichtempfindliches Bauelement
JP4963120B2 (ja) * 2006-02-14 2012-06-27 独立行政法人産業技術総合研究所 光電界効果トランジスタ,及びそれを用いた集積型フォトディテクタ
US8120078B2 (en) * 2007-11-19 2012-02-21 Infineon Technologies Ag Photodiode structure
US8247854B2 (en) * 2009-10-08 2012-08-21 Electronics And Telecommunications Research Institute CMOS image sensor
JP2014199898A (ja) * 2013-03-11 2014-10-23 ソニー株式会社 固体撮像素子および製造方法、並びに、電子機器

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3601668A (en) * 1969-11-07 1971-08-24 Fairchild Camera Instr Co Surface depletion layer photodevice
US3676715A (en) * 1970-06-26 1972-07-11 Bell Telephone Labor Inc Semiconductor apparatus for image sensing and dynamic storage
CA948331A (en) * 1971-03-16 1974-05-28 Michael F. Tompsett Charge transfer imaging devices
US3812518A (en) * 1973-01-02 1974-05-21 Gen Electric Photodiode with patterned structure
US3983573A (en) * 1974-03-12 1976-09-28 Nippon Electric Company, Ltd. Charge-coupled linear image sensing device
JPS5937629B2 (ja) * 1975-01-30 1984-09-11 ソニー株式会社 固体撮像体
JPS5310433B2 (ja) * 1975-03-10 1978-04-13
GB1562287A (en) * 1976-03-27 1980-03-12 Marconi Co Ltd Imaging device

Also Published As

Publication number Publication date
US4148051A (en) 1979-04-03
FR2379914A1 (fr) 1978-09-01
DE2804466A1 (de) 1978-08-10
JPS5396720A (en) 1978-08-24
FR2379914B1 (ja) 1983-02-11
GB1594185A (en) 1981-07-30
DE2804466C3 (de) 1980-10-09
JPS5730349B2 (ja) 1982-06-28
DE2804466B2 (de) 1980-02-14

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Legal Events

Date Code Title Description
BB A search report has been drawn up
A85 Still pending on 85-01-01
BC A request for examination has been filed
BV The patent application has lapsed