JPS5310433B2 - - Google Patents

Info

Publication number
JPS5310433B2
JPS5310433B2 JP2937375A JP2937375A JPS5310433B2 JP S5310433 B2 JPS5310433 B2 JP S5310433B2 JP 2937375 A JP2937375 A JP 2937375A JP 2937375 A JP2937375 A JP 2937375A JP S5310433 B2 JPS5310433 B2 JP S5310433B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP2937375A
Other versions
JPS51103790A (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP2937375A priority Critical patent/JPS5310433B2/ja
Priority to US05/662,337 priority patent/US4067046A/en
Priority to GB8704/76A priority patent/GB1494186A/en
Priority to CA247,434A priority patent/CA1063232A/en
Priority to DE2609731A priority patent/DE2609731C3/de
Priority to FR7606739A priority patent/FR2304234A1/fr
Publication of JPS51103790A publication Critical patent/JPS51103790A/ja
Publication of JPS5310433B2 publication Critical patent/JPS5310433B2/ja
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14643Photodiode arrays; MOS imagers
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/62Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70SSIS architectures; Circuits associated therewith
    • H04N25/76Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/78Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
JP2937375A 1975-03-10 1975-03-10 Expired JPS5310433B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2937375A JPS5310433B2 (ja) 1975-03-10 1975-03-10
US05/662,337 US4067046A (en) 1975-03-10 1976-03-01 Solid state imaging device
GB8704/76A GB1494186A (en) 1975-03-10 1976-03-04 Solid state imaging device
CA247,434A CA1063232A (en) 1975-03-10 1976-03-09 Solid state imaging device
DE2609731A DE2609731C3 (de) 1975-03-10 1976-03-09 Festkörper-Abbildungsvorrichtung
FR7606739A FR2304234A1 (fr) 1975-03-10 1976-03-09 Dispositif d'imagerie a etat solide

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2937375A JPS5310433B2 (ja) 1975-03-10 1975-03-10

Publications (2)

Publication Number Publication Date
JPS51103790A JPS51103790A (ja) 1976-09-13
JPS5310433B2 true JPS5310433B2 (ja) 1978-04-13

Family

ID=12274332

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2937375A Expired JPS5310433B2 (ja) 1975-03-10 1975-03-10

Country Status (6)

Country Link
US (1) US4067046A (ja)
JP (1) JPS5310433B2 (ja)
CA (1) CA1063232A (ja)
DE (1) DE2609731C3 (ja)
FR (1) FR2304234A1 (ja)
GB (1) GB1494186A (ja)

Families Citing this family (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2356328A1 (fr) * 1976-06-24 1978-01-20 Ibm France Dispositif d'elimination du bruit dans les reseaux photosensibles a auto-balayage
JPS5389617A (en) * 1977-01-19 1978-08-07 Hitachi Ltd Driving method of solid image pickup element
GB1595253A (en) * 1977-01-24 1981-08-12 Hitachi Ltd Solid-state imaging devices
JPS5396720A (en) * 1977-02-04 1978-08-24 Hitachi Ltd Solid image pickup element
JPS5853830B2 (ja) * 1977-07-13 1983-12-01 株式会社日立製作所 カラ−固体撮像装置
JPS605108B2 (ja) * 1977-08-01 1985-02-08 株式会社日立製作所 固体擦像装置
JPS585627B2 (ja) * 1977-08-10 1983-02-01 株式会社日立製作所 固体撮像装置
JPS583630B2 (ja) * 1977-09-16 1983-01-22 松下電子工業株式会社 固体光像検出装置
GB2008889B (en) * 1977-11-07 1982-08-04 Hitachi Ltd Solid state image pickup device
JPS6017196B2 (ja) * 1978-01-23 1985-05-01 株式会社日立製作所 固体撮像素子
JPS5544788A (en) * 1978-09-27 1980-03-29 Matsushita Electronics Corp Charge transfer method
US4242706A (en) * 1978-11-13 1980-12-30 Texas Instruments Incorporated Visible light and near infrared imaging device
JPS5919666B2 (ja) * 1978-12-27 1984-05-08 肇産業株式会社 マトリツクスアレイカメラ
JPS55112081A (en) * 1979-02-21 1980-08-29 Hitachi Ltd Solid state pickup device
JPS55145481A (en) * 1979-04-28 1980-11-13 Canon Inc Mos image sensor
DE2917989A1 (de) * 1979-05-04 1980-11-13 Bosch Gmbh Robert Elektronische koppelfeldeinrichtung
JPS6033346B2 (ja) * 1979-07-02 1985-08-02 株式会社日立製作所 固体撮像装置
DE2939490A1 (de) * 1979-09-28 1981-04-16 Siemens AG, 1000 Berlin und 8000 München Monolithisch integrierter zweidimensionaler bildsensor mit einer differenzbildenden stufe
JPS5884568A (ja) * 1981-11-13 1983-05-20 Fuji Xerox Co Ltd 原稿読取装置
US4495409A (en) * 1982-02-16 1985-01-22 Hitachi, Ltd. Photosensor with diode array
JPS5952974A (ja) * 1982-09-20 1984-03-27 Hitachi Ltd 固体撮像装置
DE3236146A1 (de) * 1982-09-29 1984-03-29 Siemens AG, 1000 Berlin und 8000 München Zweidimensionaler halbleiter-bildsensor und verfahren zu seinem betrieb
GB2150390B (en) * 1983-10-18 1987-04-29 Hitachi Ltd Reducing vertical smears generated in solid state image sensors
JPS60150384A (ja) * 1984-01-18 1985-08-08 Hitachi Ltd 固体撮像装置
US4691243A (en) * 1984-05-04 1987-09-01 Energy Conversion Devices, Inc. Contact-type document scanner including protective coating
US4672454A (en) * 1984-05-04 1987-06-09 Energy Conversion Devices, Inc. X-ray image scanner and method
US4768096A (en) * 1984-05-04 1988-08-30 Energy Conversion Devices, Inc. Contact-type portable digitizing wand for scanning image-bearing surfaces
US4691244A (en) * 1984-05-04 1987-09-01 Energy Conversion Devices, Inc. Contact-type document scanner including static shield
US4660095A (en) * 1984-05-04 1987-04-21 Energy Conversion Devices, Inc. Contact-type document scanner and method
US4777534A (en) * 1986-09-29 1988-10-11 Energy Conversion Devices, Inc. Light piping substrate for contact type image replication
US5737016A (en) * 1985-11-15 1998-04-07 Canon Kabushiki Kaisha Solid state image pickup apparatus for reducing noise
EP0233020B1 (en) * 1986-02-04 1991-05-29 Canon Kabushiki Kaisha Switch array apparatus for use in a photoelectric conversion device
US4926052A (en) * 1986-03-03 1990-05-15 Kabushiki Kaisha Toshiba Radiation detecting device
US5262871A (en) * 1989-11-13 1993-11-16 Rutgers, The State University Multiple resolution image sensor
US5502488A (en) * 1991-05-07 1996-03-26 Olympus Optical Co., Ltd. Solid-state imaging device having a low impedance structure
JPH10248034A (ja) * 1997-03-03 1998-09-14 Nissan Motor Co Ltd イメージセンサ
JPH10257392A (ja) * 1997-03-14 1998-09-25 Matsushita Electron Corp 物理量分布検知半導体装置およびその駆動方法ならびにその製造方法
JP4058789B2 (ja) * 1998-02-24 2008-03-12 ソニー株式会社 固体撮像装置及びその駆動方法、並びにカメラ
US7106374B1 (en) 1999-04-05 2006-09-12 Amherst Systems, Inc. Dynamically reconfigurable vision system
JP3870088B2 (ja) * 2001-12-26 2007-01-17 キヤノン株式会社 固体撮像装置及びシステム
JP2007173926A (ja) * 2005-12-19 2007-07-05 Seiko Instruments Inc イメージセンサ

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5226974B2 (ja) * 1973-02-14 1977-07-18

Also Published As

Publication number Publication date
FR2304234A1 (fr) 1976-10-08
DE2609731C3 (de) 1978-10-05
JPS51103790A (ja) 1976-09-13
US4067046A (en) 1978-01-03
DE2609731A1 (de) 1976-09-23
DE2609731B2 (de) 1978-02-23
CA1063232A (en) 1979-09-25
FR2304234B1 (ja) 1980-01-25
GB1494186A (en) 1977-12-07

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