FR2304234A1 - Dispositif d'imagerie a etat solide - Google Patents

Dispositif d'imagerie a etat solide

Info

Publication number
FR2304234A1
FR2304234A1 FR7606739A FR7606739A FR2304234A1 FR 2304234 A1 FR2304234 A1 FR 2304234A1 FR 7606739 A FR7606739 A FR 7606739A FR 7606739 A FR7606739 A FR 7606739A FR 2304234 A1 FR2304234 A1 FR 2304234A1
Authority
FR
France
Prior art keywords
imaging device
solid state
state imaging
solid
state
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7606739A
Other languages
English (en)
Other versions
FR2304234B1 (fr
Inventor
Hirokuni Nakatani
Toru Takamura
Yoshimitsu Hiroshima
Susumu Hashimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Publication of FR2304234A1 publication Critical patent/FR2304234A1/fr
Application granted granted Critical
Publication of FR2304234B1 publication Critical patent/FR2304234B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/62—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
FR7606739A 1975-03-10 1976-03-09 Dispositif d'imagerie a etat solide Granted FR2304234A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2937375A JPS5310433B2 (fr) 1975-03-10 1975-03-10

Publications (2)

Publication Number Publication Date
FR2304234A1 true FR2304234A1 (fr) 1976-10-08
FR2304234B1 FR2304234B1 (fr) 1980-01-25

Family

ID=12274332

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7606739A Granted FR2304234A1 (fr) 1975-03-10 1976-03-09 Dispositif d'imagerie a etat solide

Country Status (6)

Country Link
US (1) US4067046A (fr)
JP (1) JPS5310433B2 (fr)
CA (1) CA1063232A (fr)
DE (1) DE2609731C3 (fr)
FR (1) FR2304234A1 (fr)
GB (1) GB1494186A (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2399772A1 (fr) * 1977-08-01 1979-03-02 Hitachi Ltd Dispositif de formation d'image a semi-conducteur
FR2400296A1 (fr) * 1977-08-10 1979-03-09 Hitachi Ltd Dispositif de captation d'image semi-conducteur

Families Citing this family (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2356328A1 (fr) * 1976-06-24 1978-01-20 Ibm France Dispositif d'elimination du bruit dans les reseaux photosensibles a auto-balayage
JPS5389617A (en) * 1977-01-19 1978-08-07 Hitachi Ltd Driving method of solid image pickup element
GB1595253A (en) * 1977-01-24 1981-08-12 Hitachi Ltd Solid-state imaging devices
JPS5396720A (en) * 1977-02-04 1978-08-24 Hitachi Ltd Solid image pickup element
JPS5853830B2 (ja) * 1977-07-13 1983-12-01 株式会社日立製作所 カラ−固体撮像装置
JPS583630B2 (ja) * 1977-09-16 1983-01-22 松下電子工業株式会社 固体光像検出装置
GB2008889B (en) * 1977-11-07 1982-08-04 Hitachi Ltd Solid state image pickup device
JPS6017196B2 (ja) * 1978-01-23 1985-05-01 株式会社日立製作所 固体撮像素子
JPS5544788A (en) * 1978-09-27 1980-03-29 Matsushita Electronics Corp Charge transfer method
US4242706A (en) * 1978-11-13 1980-12-30 Texas Instruments Incorporated Visible light and near infrared imaging device
JPS5919666B2 (ja) * 1978-12-27 1984-05-08 肇産業株式会社 マトリツクスアレイカメラ
JPS55112081A (en) * 1979-02-21 1980-08-29 Hitachi Ltd Solid state pickup device
JPS55145481A (en) * 1979-04-28 1980-11-13 Canon Inc Mos image sensor
DE2917989A1 (de) * 1979-05-04 1980-11-13 Bosch Gmbh Robert Elektronische koppelfeldeinrichtung
JPS6033346B2 (ja) * 1979-07-02 1985-08-02 株式会社日立製作所 固体撮像装置
DE2939490A1 (de) * 1979-09-28 1981-04-16 Siemens AG, 1000 Berlin und 8000 München Monolithisch integrierter zweidimensionaler bildsensor mit einer differenzbildenden stufe
JPS5884568A (ja) * 1981-11-13 1983-05-20 Fuji Xerox Co Ltd 原稿読取装置
US4495409A (en) * 1982-02-16 1985-01-22 Hitachi, Ltd. Photosensor with diode array
JPS5952974A (ja) * 1982-09-20 1984-03-27 Hitachi Ltd 固体撮像装置
DE3236146A1 (de) * 1982-09-29 1984-03-29 Siemens AG, 1000 Berlin und 8000 München Zweidimensionaler halbleiter-bildsensor und verfahren zu seinem betrieb
GB2150390B (en) * 1983-10-18 1987-04-29 Hitachi Ltd Reducing vertical smears generated in solid state image sensors
JPS60150384A (ja) * 1984-01-18 1985-08-08 Hitachi Ltd 固体撮像装置
US4768096A (en) * 1984-05-04 1988-08-30 Energy Conversion Devices, Inc. Contact-type portable digitizing wand for scanning image-bearing surfaces
US4691244A (en) * 1984-05-04 1987-09-01 Energy Conversion Devices, Inc. Contact-type document scanner including static shield
US4660095A (en) * 1984-05-04 1987-04-21 Energy Conversion Devices, Inc. Contact-type document scanner and method
US4691243A (en) * 1984-05-04 1987-09-01 Energy Conversion Devices, Inc. Contact-type document scanner including protective coating
US4777534A (en) * 1986-09-29 1988-10-11 Energy Conversion Devices, Inc. Light piping substrate for contact type image replication
US4672454A (en) * 1984-05-04 1987-06-09 Energy Conversion Devices, Inc. X-ray image scanner and method
US5737016A (en) * 1985-11-15 1998-04-07 Canon Kabushiki Kaisha Solid state image pickup apparatus for reducing noise
DE3770285D1 (de) * 1986-02-04 1991-07-04 Canon Kk Schalterfeldanordnung fuer die verwendung in einer photoelektrischen umwandlungsanordnung.
DE3768112D1 (de) * 1986-03-03 1991-04-04 Toshiba Kawasaki Kk Strahlungsdetektor.
US5262871A (en) * 1989-11-13 1993-11-16 Rutgers, The State University Multiple resolution image sensor
US5502488A (en) * 1991-05-07 1996-03-26 Olympus Optical Co., Ltd. Solid-state imaging device having a low impedance structure
JPH10248034A (ja) * 1997-03-03 1998-09-14 Nissan Motor Co Ltd イメージセンサ
JPH10257392A (ja) * 1997-03-14 1998-09-25 Matsushita Electron Corp 物理量分布検知半導体装置およびその駆動方法ならびにその製造方法
JP4058789B2 (ja) * 1998-02-24 2008-03-12 ソニー株式会社 固体撮像装置及びその駆動方法、並びにカメラ
US7106374B1 (en) 1999-04-05 2006-09-12 Amherst Systems, Inc. Dynamically reconfigurable vision system
JP3870088B2 (ja) * 2001-12-26 2007-01-17 キヤノン株式会社 固体撮像装置及びシステム
JP2007173926A (ja) * 2005-12-19 2007-07-05 Seiko Instruments Inc イメージセンサ

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5226974B2 (fr) * 1973-02-14 1977-07-18

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
EXBK/72 *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2399772A1 (fr) * 1977-08-01 1979-03-02 Hitachi Ltd Dispositif de formation d'image a semi-conducteur
FR2400296A1 (fr) * 1977-08-10 1979-03-09 Hitachi Ltd Dispositif de captation d'image semi-conducteur

Also Published As

Publication number Publication date
FR2304234B1 (fr) 1980-01-25
DE2609731B2 (de) 1978-02-23
DE2609731A1 (de) 1976-09-23
JPS51103790A (fr) 1976-09-13
DE2609731C3 (de) 1978-10-05
GB1494186A (en) 1977-12-07
CA1063232A (fr) 1979-09-25
JPS5310433B2 (fr) 1978-04-13
US4067046A (en) 1978-01-03

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Legal Events

Date Code Title Description
ST Notification of lapse