SE7709224L - Avbildningsanordning - Google Patents

Avbildningsanordning

Info

Publication number
SE7709224L
SE7709224L SE7709224A SE7709224A SE7709224L SE 7709224 L SE7709224 L SE 7709224L SE 7709224 A SE7709224 A SE 7709224A SE 7709224 A SE7709224 A SE 7709224A SE 7709224 L SE7709224 L SE 7709224L
Authority
SE
Sweden
Prior art keywords
image device
image
Prior art date
Application number
SE7709224A
Other languages
English (en)
Inventor
Santen J G Van
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Publication of SE7709224L publication Critical patent/SE7709224L/sv

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/148Charge coupled imagers
    • H01L27/14887Blooming suppression
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/148Charge coupled imagers
    • H01L27/14831Area CCD imagers
SE7709224A 1976-08-19 1977-08-16 Avbildningsanordning SE7709224L (sv)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB34599/76A GB1551935A (en) 1976-08-19 1976-08-19 Imaging devices

Publications (1)

Publication Number Publication Date
SE7709224L true SE7709224L (sv) 1978-02-20

Family

ID=10367652

Family Applications (1)

Application Number Title Priority Date Filing Date
SE7709224A SE7709224L (sv) 1976-08-19 1977-08-16 Avbildningsanordning

Country Status (9)

Country Link
US (1) US4168444A (sv)
JP (1) JPS5324795A (sv)
AU (1) AU508935B2 (sv)
CA (1) CA1128649A (sv)
DE (1) DE2735651A1 (sv)
FR (1) FR2362543A1 (sv)
GB (1) GB1551935A (sv)
IT (1) IT1084154B (sv)
SE (1) SE7709224L (sv)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1559312A (en) * 1976-08-26 1980-01-16 Philips Nv Photosensitive device arrangements and systems and photosensitive elements therefor
NL7904654A (nl) * 1979-06-14 1980-12-16 Philips Nv Televisie opneempaneel.
JPS5793568A (en) * 1980-12-02 1982-06-10 Nec Corp Semiconductor image pickup element
US4829354A (en) * 1980-12-04 1989-05-09 Westinghouse Electric Corp. Drift field switch
US4696533A (en) * 1981-01-12 1987-09-29 Massachusetts Institute Of Technology Spatial light modulator
US4865427A (en) * 1981-01-12 1989-09-12 Massachusetts Institute Of Technology Spatial light modulator
NL8105397A (nl) * 1981-11-30 1983-06-16 Philips Nv Ladingsgekoppelde inrichting.
US4810663A (en) * 1981-12-07 1989-03-07 Massachusetts Institute Of Technology Method of forming conductive path by low power laser pulse
US4585490A (en) * 1981-12-07 1986-04-29 Massachusetts Institute Of Technology Method of making a conductive path in multi-layer metal structures by low power laser beam
US4636404A (en) * 1982-06-17 1987-01-13 Mass. Institute Of Technology Method and apparatus for forming low resistance lateral links in a semiconductor device
US4675714A (en) * 1983-02-15 1987-06-23 Rockwell International Corporation Gapless gate charge coupled device
GB8401805D0 (en) * 1984-01-24 1984-02-29 Int Computers Ltd Data processing apparatus
DD247327A1 (de) * 1986-03-31 1987-07-01 Werk Fernsehelektronik Veb Ueberlaufanordnung fuer ladungssammelnde halbleitergebiete
US5047862A (en) * 1989-10-12 1991-09-10 Eastman Kodak Company Solid-state imager
US5182623A (en) * 1989-11-13 1993-01-26 Texas Instruments Incorporated Charge coupled device/charge super sweep image system and method for making
EP0621726B1 (en) * 1993-04-20 1999-06-16 Sony Corporation Method of and apparatus for solid state imaging device
US5705836A (en) * 1995-05-22 1998-01-06 Dalsa, Inc. Efficient charge transfer structure in large pitch charge coupled device
JP2871640B2 (ja) * 1996-12-18 1999-03-17 日本電気株式会社 固体撮像素子の駆動方法
US5965910A (en) * 1997-04-29 1999-10-12 Ohmeda Inc. Large cell charge coupled device for spectroscopy
JP3033524B2 (ja) * 1997-05-23 2000-04-17 日本電気株式会社 固体撮像装置
JP4200545B2 (ja) * 1998-06-08 2008-12-24 ソニー株式会社 固体撮像素子およびその駆動方法、並びにカメラシステム
JP4397989B2 (ja) * 1998-12-28 2010-01-13 浜松ホトニクス株式会社 半導体エネルギー検出器
US6599817B1 (en) * 2002-04-26 2003-07-29 Micron Technology, Inc. Semiconductor constructions, and methods of forming semiconductor constructions
EP2182523B1 (en) * 2008-10-31 2013-01-09 CSEM Centre Suisse d'Electronique et de Microtechnique SA -Recherche et Développement Charge sampling device and method based on a MOS-transmission line
JP5452511B2 (ja) * 2011-01-14 2014-03-26 浜松ホトニクス株式会社 固体撮像装置
JP5680979B2 (ja) * 2011-01-20 2015-03-04 浜松ホトニクス株式会社 固体撮像装置
US8750040B2 (en) * 2011-01-21 2014-06-10 Micron Technology, Inc. Memory devices having source lines directly coupled to body regions and methods
KR20190041308A (ko) 2017-10-12 2019-04-22 주식회사 엘지화학 슈트 타입 모노머 디스펜서

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3796932A (en) * 1971-06-28 1974-03-12 Bell Telephone Labor Inc Charge coupled devices employing nonuniform concentrations of immobile charge along the information channel
US3796933A (en) * 1971-11-10 1974-03-12 Ibm Single-phase charge-coupled semiconductor device
NL181766C (nl) * 1973-03-19 1987-10-16 Philips Nv Ladingsgekoppelde halfgeleiderschakeling, waarbij pakketten meerderheidsladingsdragers door een halfgeleiderlaag evenwijdig aan de halfgeleiderlaag kunnen worden overgedragen.
NL7311600A (nl) * 1973-08-23 1975-02-25 Philips Nv Ladingsgekoppelde inrichting.
US3896474A (en) * 1973-09-10 1975-07-22 Fairchild Camera Instr Co Charge coupled area imaging device with column anti-blooming control
FR2294546A1 (fr) * 1974-12-13 1976-07-09 Thomson Csf Dispositif a transfert de charges monophase
DE2523683C2 (de) * 1975-05-28 1985-03-07 Siemens AG, 1000 Berlin und 8000 München Integrierte Schaltung mit einer Leitung zum Transport von Ladungen zwischen Speicherelementen eines Halbleiterspeichers und einer Schreib-Lese-Schaltung
DE2606308C2 (de) * 1976-02-17 1985-05-23 Siemens AG, 1000 Berlin und 8000 München Zweidimensionaler optoelektronischer Halbleitersensor

Also Published As

Publication number Publication date
AU508935B2 (en) 1980-04-17
JPS552749B2 (sv) 1980-01-22
DE2735651C2 (sv) 1990-02-01
GB1551935A (en) 1979-09-05
DE2735651A1 (de) 1978-02-23
IT1084154B (it) 1985-05-25
JPS5324795A (en) 1978-03-07
FR2362543A1 (fr) 1978-03-17
AU2784577A (en) 1979-02-15
US4168444A (en) 1979-09-18
CA1128649A (en) 1982-07-27
FR2362543B1 (sv) 1984-06-15

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