JPS5376678A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5376678A
JPS5376678A JP15242776A JP15242776A JPS5376678A JP S5376678 A JPS5376678 A JP S5376678A JP 15242776 A JP15242776 A JP 15242776A JP 15242776 A JP15242776 A JP 15242776A JP S5376678 A JPS5376678 A JP S5376678A
Authority
JP
Japan
Prior art keywords
semiconductor device
diodes
expand
films
series
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15242776A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6112392B2 (enrdf_load_stackoverflow
Inventor
Minoru Araki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP15242776A priority Critical patent/JPS5376678A/ja
Publication of JPS5376678A publication Critical patent/JPS5376678A/ja
Publication of JPS6112392B2 publication Critical patent/JPS6112392B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/611Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using diodes as protective elements

Landscapes

  • Amplifiers (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Protection Of Static Devices (AREA)
JP15242776A 1976-12-17 1976-12-17 Semiconductor device Granted JPS5376678A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15242776A JPS5376678A (en) 1976-12-17 1976-12-17 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15242776A JPS5376678A (en) 1976-12-17 1976-12-17 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS5376678A true JPS5376678A (en) 1978-07-07
JPS6112392B2 JPS6112392B2 (enrdf_load_stackoverflow) 1986-04-08

Family

ID=15540270

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15242776A Granted JPS5376678A (en) 1976-12-17 1976-12-17 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5376678A (enrdf_load_stackoverflow)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6367263U (enrdf_load_stackoverflow) * 1987-09-17 1988-05-06
JPH02268460A (ja) * 1989-04-10 1990-11-02 Matsushita Electric Ind Co Ltd 静電破壊防止回路
JPH03129779A (ja) * 1989-07-12 1991-06-03 Fuji Electric Co Ltd 高耐圧半導体装置
JPH0453169A (ja) * 1990-06-18 1992-02-20 Nec Corp 半導体保護装置
JPH0590523A (ja) * 1992-03-16 1993-04-09 Seiko Epson Corp 半導体装置
JPH0590522A (ja) * 1992-03-16 1993-04-09 Seiko Epson Corp 半導体装置
JPH0590521A (ja) * 1992-03-16 1993-04-09 Seiko Epson Corp 半導体装置
JP2013201164A (ja) * 2012-03-23 2013-10-03 Toshiba Corp 半導体装置

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6367263U (enrdf_load_stackoverflow) * 1987-09-17 1988-05-06
JPH02268460A (ja) * 1989-04-10 1990-11-02 Matsushita Electric Ind Co Ltd 静電破壊防止回路
JPH03129779A (ja) * 1989-07-12 1991-06-03 Fuji Electric Co Ltd 高耐圧半導体装置
JPH0453169A (ja) * 1990-06-18 1992-02-20 Nec Corp 半導体保護装置
JPH0590523A (ja) * 1992-03-16 1993-04-09 Seiko Epson Corp 半導体装置
JPH0590522A (ja) * 1992-03-16 1993-04-09 Seiko Epson Corp 半導体装置
JPH0590521A (ja) * 1992-03-16 1993-04-09 Seiko Epson Corp 半導体装置
JP2013201164A (ja) * 2012-03-23 2013-10-03 Toshiba Corp 半導体装置

Also Published As

Publication number Publication date
JPS6112392B2 (enrdf_load_stackoverflow) 1986-04-08

Similar Documents

Publication Publication Date Title
JPS51135373A (en) Semiconductor device
JPS5376678A (en) Semiconductor device
JPS53108392A (en) Semiconductor device
JPS5242386A (en) Semiconducteor device
JPS5376677A (en) Semiconductor device
JPS5360582A (en) Semiconductor ingegrated circuit device
JPS5219083A (en) Field-effect tansistor
JPS5322383A (en) Iil simiconductor device
JPS51147972A (en) Insulated gate field effect semiconductor device
JPS5333510A (en) Semiconductor channel switch
JPS522157A (en) Mis output circuit
JPS532061A (en) Flip-flop circuit
JPS5368555A (en) Pulse circuit
JPS52133549A (en) Semiconductor swtich
JPS52153655A (en) Gate circuit for thyristor
JPS5365081A (en) Field effect semiconductor device
JPS5259584A (en) Semiconductor memory device
JPS549588A (en) Semiconductor control rectifier equipment
JPS52123181A (en) Semiconductor controlling rectifying device
JPS5352376A (en) Production of field effect type semiconductor device
JPS52144279A (en) Semiconductor device
JPS5386178A (en) Field effect type semiconductor memory device
JPS5432084A (en) Semiconductor device
JPS52128077A (en) Insulation gate type semiconductor device
JPS52101981A (en) Semiconductor device