JPS6112392B2 - - Google Patents
Info
- Publication number
- JPS6112392B2 JPS6112392B2 JP51152427A JP15242776A JPS6112392B2 JP S6112392 B2 JPS6112392 B2 JP S6112392B2 JP 51152427 A JP51152427 A JP 51152427A JP 15242776 A JP15242776 A JP 15242776A JP S6112392 B2 JPS6112392 B2 JP S6112392B2
- Authority
- JP
- Japan
- Prior art keywords
- diode
- polycrystalline silicon
- type
- thin film
- field effect
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
- H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
- H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
- H10D89/611—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using diodes as protective elements
Landscapes
- Amplifiers (AREA)
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Protection Of Static Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15242776A JPS5376678A (en) | 1976-12-17 | 1976-12-17 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15242776A JPS5376678A (en) | 1976-12-17 | 1976-12-17 | Semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5376678A JPS5376678A (en) | 1978-07-07 |
| JPS6112392B2 true JPS6112392B2 (enrdf_load_stackoverflow) | 1986-04-08 |
Family
ID=15540270
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15242776A Granted JPS5376678A (en) | 1976-12-17 | 1976-12-17 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5376678A (enrdf_load_stackoverflow) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6367263U (enrdf_load_stackoverflow) * | 1987-09-17 | 1988-05-06 | ||
| JPH02268460A (ja) * | 1989-04-10 | 1990-11-02 | Matsushita Electric Ind Co Ltd | 静電破壊防止回路 |
| JPH03129779A (ja) * | 1989-07-12 | 1991-06-03 | Fuji Electric Co Ltd | 高耐圧半導体装置 |
| JPH0453169A (ja) * | 1990-06-18 | 1992-02-20 | Nec Corp | 半導体保護装置 |
| JPH0758736B2 (ja) * | 1992-03-16 | 1995-06-21 | セイコーエプソン株式会社 | 半導体装置 |
| JPH0758737B2 (ja) * | 1992-03-16 | 1995-06-21 | セイコーエプソン株式会社 | 半導体装置 |
| JPH0758738B2 (ja) * | 1992-03-16 | 1995-06-21 | セイコーエプソン株式会社 | 半導体装置 |
| JP2013201164A (ja) * | 2012-03-23 | 2013-10-03 | Toshiba Corp | 半導体装置 |
-
1976
- 1976-12-17 JP JP15242776A patent/JPS5376678A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5376678A (en) | 1978-07-07 |
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