JPS52123181A - Semiconductor controlling rectifying device - Google Patents

Semiconductor controlling rectifying device

Info

Publication number
JPS52123181A
JPS52123181A JP3930876A JP3930876A JPS52123181A JP S52123181 A JPS52123181 A JP S52123181A JP 3930876 A JP3930876 A JP 3930876A JP 3930876 A JP3930876 A JP 3930876A JP S52123181 A JPS52123181 A JP S52123181A
Authority
JP
Japan
Prior art keywords
rectifying device
controlling rectifying
semiconductor controlling
reduce
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3930876A
Other languages
Japanese (ja)
Other versions
JPS6012790B2 (en
Inventor
Hisao Udagawa
Tetsuo Sueoka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NIPPON INTAANASHIYONARU SEIRIY
Meidensha Electric Manufacturing Co Ltd
International Rectifier Corp Japan Ltd
Original Assignee
NIPPON INTAANASHIYONARU SEIRIY
Meidensha Electric Manufacturing Co Ltd
International Rectifier Corp Japan Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NIPPON INTAANASHIYONARU SEIRIY, Meidensha Electric Manufacturing Co Ltd, International Rectifier Corp Japan Ltd filed Critical NIPPON INTAANASHIYONARU SEIRIY
Priority to JP3930876A priority Critical patent/JPS6012790B2/en
Priority to GB1397877A priority patent/GB1557399A/en
Publication of JPS52123181A publication Critical patent/JPS52123181A/en
Publication of JPS6012790B2 publication Critical patent/JPS6012790B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42308—Gate electrodes for thyristors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/744—Gate-turn-off devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)

Abstract

PURPOSE:To reduce the power consumed by gate signals and reduce the size of gate driver circuits by disposing another gate electrode of a smaller counter length in opposition to one end of cathode electrode.
JP3930876A 1976-04-09 1976-04-09 Semiconductor controlled rectifier Expired JPS6012790B2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP3930876A JPS6012790B2 (en) 1976-04-09 1976-04-09 Semiconductor controlled rectifier
GB1397877A GB1557399A (en) 1976-04-09 1977-04-01 Gate controlled semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3930876A JPS6012790B2 (en) 1976-04-09 1976-04-09 Semiconductor controlled rectifier

Publications (2)

Publication Number Publication Date
JPS52123181A true JPS52123181A (en) 1977-10-17
JPS6012790B2 JPS6012790B2 (en) 1985-04-03

Family

ID=12549476

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3930876A Expired JPS6012790B2 (en) 1976-04-09 1976-04-09 Semiconductor controlled rectifier

Country Status (1)

Country Link
JP (1) JPS6012790B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61125173A (en) * 1984-11-22 1986-06-12 Meidensha Electric Mfg Co Ltd Gate turn-off thyristor

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0169991U (en) * 1987-10-29 1989-05-10

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61125173A (en) * 1984-11-22 1986-06-12 Meidensha Electric Mfg Co Ltd Gate turn-off thyristor

Also Published As

Publication number Publication date
JPS6012790B2 (en) 1985-04-03

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