JPS5440579A - Semiconductor intergated-circuit device - Google Patents

Semiconductor intergated-circuit device

Info

Publication number
JPS5440579A
JPS5440579A JP10746577A JP10746577A JPS5440579A JP S5440579 A JPS5440579 A JP S5440579A JP 10746577 A JP10746577 A JP 10746577A JP 10746577 A JP10746577 A JP 10746577A JP S5440579 A JPS5440579 A JP S5440579A
Authority
JP
Japan
Prior art keywords
intergated
semiconductor
circuit device
circuit containing
potential
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10746577A
Other languages
Japanese (ja)
Other versions
JPS6120150B2 (en
Inventor
Masaaki Ueno
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP10746577A priority Critical patent/JPS5440579A/en
Publication of JPS5440579A publication Critical patent/JPS5440579A/en
Publication of JPS6120150B2 publication Critical patent/JPS6120150B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Static Random-Access Memory (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)

Abstract

PURPOSE: To reduce power consumption without applying an unneeded potential to a circuit containing an oscillator by constituting the circuit containing a RAM and the circuit containing an oscillator separately, by inserting a MOSEET between power supplies of these circuits, and by controlling the potential of the power supply applying power to the gate electrode of this FET.
COPYRIGHT: (C)1979,JPO&Japio
JP10746577A 1977-09-06 1977-09-06 Semiconductor intergated-circuit device Granted JPS5440579A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10746577A JPS5440579A (en) 1977-09-06 1977-09-06 Semiconductor intergated-circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10746577A JPS5440579A (en) 1977-09-06 1977-09-06 Semiconductor intergated-circuit device

Publications (2)

Publication Number Publication Date
JPS5440579A true JPS5440579A (en) 1979-03-30
JPS6120150B2 JPS6120150B2 (en) 1986-05-21

Family

ID=14459869

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10746577A Granted JPS5440579A (en) 1977-09-06 1977-09-06 Semiconductor intergated-circuit device

Country Status (1)

Country Link
JP (1) JPS5440579A (en)

Also Published As

Publication number Publication date
JPS6120150B2 (en) 1986-05-21

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