JPS52144279A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS52144279A JPS52144279A JP6181476A JP6181476A JPS52144279A JP S52144279 A JPS52144279 A JP S52144279A JP 6181476 A JP6181476 A JP 6181476A JP 6181476 A JP6181476 A JP 6181476A JP S52144279 A JPS52144279 A JP S52144279A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- function
- logical
- fet
- arranging
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
- H01L29/812—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate
- H01L29/8124—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate with multiple gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
PURPOSE:To provide a semiconductor device which possesses various functions such as logical product function, logical sum function, not function or the like, and which has increasingly improved logical functions even at the same area by dividing the gate electrode of the FET into at least three pieces and arranging them in a proper manner.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6181476A JPS52144279A (en) | 1976-05-27 | 1976-05-27 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6181476A JPS52144279A (en) | 1976-05-27 | 1976-05-27 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS52144279A true JPS52144279A (en) | 1977-12-01 |
Family
ID=13181920
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6181476A Pending JPS52144279A (en) | 1976-05-27 | 1976-05-27 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS52144279A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2691838A1 (en) * | 1993-05-28 | 1993-12-03 | Gold Star Electronics | Synapse MOS transistor esp. for neural network |
-
1976
- 1976-05-27 JP JP6181476A patent/JPS52144279A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2691838A1 (en) * | 1993-05-28 | 1993-12-03 | Gold Star Electronics | Synapse MOS transistor esp. for neural network |
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