JPS5339878A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5339878A
JPS5339878A JP11507876A JP11507876A JPS5339878A JP S5339878 A JPS5339878 A JP S5339878A JP 11507876 A JP11507876 A JP 11507876A JP 11507876 A JP11507876 A JP 11507876A JP S5339878 A JPS5339878 A JP S5339878A
Authority
JP
Japan
Prior art keywords
semiconductor device
regions
schoottky
tripple
sbds
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11507876A
Other languages
English (en)
Japanese (ja)
Other versions
JPS611907B2 (cs
Inventor
Kazutoshi Kamibayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP11507876A priority Critical patent/JPS5339878A/ja
Publication of JPS5339878A publication Critical patent/JPS5339878A/ja
Publication of JPS611907B2 publication Critical patent/JPS611907B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/121—BJTs having built-in components

Landscapes

  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
JP11507876A 1976-09-24 1976-09-24 Semiconductor device Granted JPS5339878A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11507876A JPS5339878A (en) 1976-09-24 1976-09-24 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11507876A JPS5339878A (en) 1976-09-24 1976-09-24 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS5339878A true JPS5339878A (en) 1978-04-12
JPS611907B2 JPS611907B2 (cs) 1986-01-21

Family

ID=14653624

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11507876A Granted JPS5339878A (en) 1976-09-24 1976-09-24 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5339878A (cs)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55132068A (en) * 1979-03-30 1980-10-14 Ibm Pnp bipolar transistor
JPS59119757A (ja) * 1982-12-20 1984-07-11 エヌ・ベ−・フイリツプス・フル−イランペンフアブリケン 集積回路及びその製造方法
JPS60137453U (ja) * 1984-02-23 1985-09-11 関西日本電気株式会社 半導体装置

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55132068A (en) * 1979-03-30 1980-10-14 Ibm Pnp bipolar transistor
JPS59119757A (ja) * 1982-12-20 1984-07-11 エヌ・ベ−・フイリツプス・フル−イランペンフアブリケン 集積回路及びその製造方法
JPS60137453U (ja) * 1984-02-23 1985-09-11 関西日本電気株式会社 半導体装置

Also Published As

Publication number Publication date
JPS611907B2 (cs) 1986-01-21

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