JPS611907B2 - - Google Patents

Info

Publication number
JPS611907B2
JPS611907B2 JP51115078A JP11507876A JPS611907B2 JP S611907 B2 JPS611907 B2 JP S611907B2 JP 51115078 A JP51115078 A JP 51115078A JP 11507876 A JP11507876 A JP 11507876A JP S611907 B2 JPS611907 B2 JP S611907B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP51115078A
Other languages
Japanese (ja)
Other versions
JPS5339878A (en
Inventor
Kazutoshi Kamibayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP11507876A priority Critical patent/JPS5339878A/ja
Publication of JPS5339878A publication Critical patent/JPS5339878A/ja
Publication of JPS611907B2 publication Critical patent/JPS611907B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/121BJTs having built-in components

Landscapes

  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
JP11507876A 1976-09-24 1976-09-24 Semiconductor device Granted JPS5339878A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11507876A JPS5339878A (en) 1976-09-24 1976-09-24 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11507876A JPS5339878A (en) 1976-09-24 1976-09-24 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS5339878A JPS5339878A (en) 1978-04-12
JPS611907B2 true JPS611907B2 (cs) 1986-01-21

Family

ID=14653624

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11507876A Granted JPS5339878A (en) 1976-09-24 1976-09-24 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5339878A (cs)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55132068A (en) * 1979-03-30 1980-10-14 Ibm Pnp bipolar transistor
DE3379563D1 (en) * 1982-12-20 1989-05-11 Philips Nv Integrated circuit and method
JPS60137453U (ja) * 1984-02-23 1985-09-11 関西日本電気株式会社 半導体装置

Also Published As

Publication number Publication date
JPS5339878A (en) 1978-04-12

Similar Documents

Publication Publication Date Title
CH629642B (cs)
JPS5318876U (cs)
JPS52119702U (cs)
FR2341232B1 (cs)
JPS5354528U (cs)
JPS5653807Y2 (cs)
JPS5391475U (cs)
JPS5385653U (cs)
JPS5370539U (cs)
JPS52155601U (cs)
JPS52141031U (cs)
CH614649A5 (cs)
BG23234A1 (cs)
BG23282A1 (cs)
BG23283A1 (cs)
BG23313A1 (cs)
BG23517A1 (cs)
BG23528A1 (cs)
CH372476A4 (cs)
CH580766A5 (cs)
CH591733A5 (cs)
CH592796A5 (cs)
CH593478A5 (cs)
CH593667A5 (cs)
CH596359A5 (cs)