JPS5333074A - Production of complementary type insulated gate field effect semiconductor device - Google Patents

Production of complementary type insulated gate field effect semiconductor device

Info

Publication number
JPS5333074A
JPS5333074A JP10860276A JP10860276A JPS5333074A JP S5333074 A JPS5333074 A JP S5333074A JP 10860276 A JP10860276 A JP 10860276A JP 10860276 A JP10860276 A JP 10860276A JP S5333074 A JPS5333074 A JP S5333074A
Authority
JP
Japan
Prior art keywords
production
semiconductor device
field effect
insulated gate
gate field
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10860276A
Other languages
English (en)
Japanese (ja)
Inventor
Tamaki Sawazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Sanyo Electric Co Ltd
Sanyo Electric Co Ltd
Original Assignee
Tokyo Sanyo Electric Co Ltd
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Sanyo Electric Co Ltd, Sanyo Electric Co Ltd filed Critical Tokyo Sanyo Electric Co Ltd
Priority to JP10860276A priority Critical patent/JPS5333074A/ja
Priority to NL7709870A priority patent/NL174304C/nl
Priority to DE19772740549 priority patent/DE2740549C2/de
Publication of JPS5333074A publication Critical patent/JPS5333074A/ja
Priority to US06/014,922 priority patent/US4217149A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H01L27/0927—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors comprising a P-well only in the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/8238—Complementary field-effect transistors, e.g. CMOS
    • H01L21/823807—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the channel structures, e.g. channel implants, halo or pocket implants, or channel materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP10860276A 1976-09-08 1976-09-08 Production of complementary type insulated gate field effect semiconductor device Pending JPS5333074A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP10860276A JPS5333074A (en) 1976-09-08 1976-09-08 Production of complementary type insulated gate field effect semiconductor device
NL7709870A NL174304C (nl) 1976-09-08 1977-09-08 Werkwijze voor het vervaardigen van een geintegreerde halfgeleiderschakeling, die uit complementaire veldeffecttransistors met een geisoleerde stuurelektrode is samengesteld.
DE19772740549 DE2740549C2 (de) 1976-09-08 1977-09-08 Verfahren zur Herstellung eines Halbleiterbauelements mit komplementären Feldeffekttransistor
US06/014,922 US4217149A (en) 1976-09-08 1979-02-26 Method of manufacturing complementary insulated gate field effect semiconductor device by multiple implantations and diffusion

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10860276A JPS5333074A (en) 1976-09-08 1976-09-08 Production of complementary type insulated gate field effect semiconductor device

Publications (1)

Publication Number Publication Date
JPS5333074A true JPS5333074A (en) 1978-03-28

Family

ID=14488949

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10860276A Pending JPS5333074A (en) 1976-09-08 1976-09-08 Production of complementary type insulated gate field effect semiconductor device

Country Status (3)

Country Link
JP (1) JPS5333074A (nl)
DE (1) DE2740549C2 (nl)
NL (1) NL174304C (nl)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56118372A (en) * 1980-02-22 1981-09-17 Nec Corp Semiconductor device
JPS6187375A (ja) * 1985-10-18 1986-05-02 Nec Corp 半導体装置の製造方法
JPH03101264A (ja) * 1990-05-07 1991-04-26 Nec Corp 相補型電界効果トランジスタの製造方法

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3133841A1 (de) * 1981-08-27 1983-03-17 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen von hochintegrierten komplementaeren mos-feldeffekttransistorschaltungen
US4462151A (en) * 1982-12-03 1984-07-31 International Business Machines Corporation Method of making high density complementary transistors
EP0123384A1 (en) * 1983-02-25 1984-10-31 Western Digital Corporation Complementary insulated gate field effect integrated circuit structure and process for fabricating the structure
DE3314450A1 (de) * 1983-04-21 1984-10-25 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen von hochintegrierten komplementaeren mos-feldeffekttransistorschaltungen
DE3318213A1 (de) * 1983-05-19 1984-11-22 Deutsche Itt Industries Gmbh, 7800 Freiburg Verfahren zum herstellen eines integrierten isolierschicht-feldeffekttransistors mit zur gateelektrode selbstausgerichteten kontakten
DE3330851A1 (de) * 1983-08-26 1985-03-14 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen von hochintegrierten komplementaeren mos-feldeffekttransistorschaltungen
DE3340560A1 (de) * 1983-11-09 1985-05-15 Siemens AG, 1000 Berlin und 8000 München Verfahren zum gleichzeitigen herstellen von schnellen kurzkanal- und spannungsfesten mos-transistoren in vlsi-schaltungen

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51147184A (en) * 1975-06-11 1976-12-17 Toshiba Corp Method of mawufacturing of mosic circuit device

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL7017066A (nl) * 1970-11-21 1972-05-24

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51147184A (en) * 1975-06-11 1976-12-17 Toshiba Corp Method of mawufacturing of mosic circuit device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56118372A (en) * 1980-02-22 1981-09-17 Nec Corp Semiconductor device
JPH0467342B2 (nl) * 1980-02-22 1992-10-28 Nippon Electric Co
JPS6187375A (ja) * 1985-10-18 1986-05-02 Nec Corp 半導体装置の製造方法
JPH03101264A (ja) * 1990-05-07 1991-04-26 Nec Corp 相補型電界効果トランジスタの製造方法

Also Published As

Publication number Publication date
NL174304C (nl) 1984-05-16
NL7709870A (nl) 1978-03-10
DE2740549C2 (de) 1986-02-20
DE2740549A1 (de) 1978-03-09
NL174304B (nl) 1983-12-16

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