JPS5331979A - Insulated gate type field effect semiconductor device - Google Patents
Insulated gate type field effect semiconductor deviceInfo
- Publication number
- JPS5331979A JPS5331979A JP10647776A JP10647776A JPS5331979A JP S5331979 A JPS5331979 A JP S5331979A JP 10647776 A JP10647776 A JP 10647776A JP 10647776 A JP10647776 A JP 10647776A JP S5331979 A JPS5331979 A JP S5331979A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- field effect
- type field
- insulated gate
- gate type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10647776A JPS5331979A (en) | 1976-09-06 | 1976-09-06 | Insulated gate type field effect semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10647776A JPS5331979A (en) | 1976-09-06 | 1976-09-06 | Insulated gate type field effect semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5331979A true JPS5331979A (en) | 1978-03-25 |
Family
ID=14434570
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10647776A Pending JPS5331979A (en) | 1976-09-06 | 1976-09-06 | Insulated gate type field effect semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5331979A (ja) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5522856A (en) * | 1978-08-07 | 1980-02-18 | Toshiba Corp | Semiconductor device and its manufacturing method |
JPS5683078A (en) * | 1979-12-11 | 1981-07-07 | Mitsubishi Electric Corp | Semiconductor device |
JPS57106166A (en) * | 1980-12-24 | 1982-07-01 | Fujitsu Ltd | Semiconductor device |
JPS586160A (ja) * | 1981-07-03 | 1983-01-13 | Nec Corp | 半導体装置の製造方法 |
JPS61225857A (ja) * | 1985-03-29 | 1986-10-07 | Nippon Telegr & Teleph Corp <Ntt> | 相補型半導体装置の製造方法 |
US5541435A (en) * | 1992-05-12 | 1996-07-30 | Harris Corporation | Integration of high voltage lateral MOS devices in low voltage CMOS architecture using CMOS-compatible process steps |
-
1976
- 1976-09-06 JP JP10647776A patent/JPS5331979A/ja active Pending
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5522856A (en) * | 1978-08-07 | 1980-02-18 | Toshiba Corp | Semiconductor device and its manufacturing method |
JPS5683078A (en) * | 1979-12-11 | 1981-07-07 | Mitsubishi Electric Corp | Semiconductor device |
JPS57106166A (en) * | 1980-12-24 | 1982-07-01 | Fujitsu Ltd | Semiconductor device |
JPS586160A (ja) * | 1981-07-03 | 1983-01-13 | Nec Corp | 半導体装置の製造方法 |
JPH0115150B2 (ja) * | 1981-07-03 | 1989-03-15 | Nippon Electric Co | |
JPS61225857A (ja) * | 1985-03-29 | 1986-10-07 | Nippon Telegr & Teleph Corp <Ntt> | 相補型半導体装置の製造方法 |
US5541435A (en) * | 1992-05-12 | 1996-07-30 | Harris Corporation | Integration of high voltage lateral MOS devices in low voltage CMOS architecture using CMOS-compatible process steps |
US5622878A (en) * | 1992-05-12 | 1997-04-22 | Harris Corporation | Method of making an integration of high voltage lateral MOS devices in low voltage CMOS architecture using CMOS-compatible process steps |
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