JPS5683078A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5683078A
JPS5683078A JP16312279A JP16312279A JPS5683078A JP S5683078 A JPS5683078 A JP S5683078A JP 16312279 A JP16312279 A JP 16312279A JP 16312279 A JP16312279 A JP 16312279A JP S5683078 A JPS5683078 A JP S5683078A
Authority
JP
Japan
Prior art keywords
impurities
decided
threshold value
junction breakdown
breakdown voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16312279A
Other languages
Japanese (ja)
Inventor
Akira Ando
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP16312279A priority Critical patent/JPS5683078A/en
Publication of JPS5683078A publication Critical patent/JPS5683078A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Local Oxidation Of Silicon (AREA)
  • Element Separation (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To obtain high P-N junction breakdown voltage and filed transistor threshold value voltage by a method wherein P-N junction breakdown voltage and field transistor threshold value voltage are each decided by the introduction of impurites with the same conduction types as separate semiconductor substrates. CONSTITUTION:P-N junction breakdown voltage is decided by the concentration of impurities with the same conduction type as a silicon substrate 1 of a high concentration region 5 contacting with a diffusion layer 7 of impurities with a conduction type opposite to the silicon substrate 1. The threshold value voltage of a field transistor is approximately decided by the concentration of impurities with the same conduction type as the silicon substrate 1 of an impurity injecting region 11. Thus, P-N junction breakdown voltage and field transistor threshold value voltage are each decided by the ion injection of impurities with the same conduction types as separate silicon substrates 1.
JP16312279A 1979-12-11 1979-12-11 Semiconductor device Pending JPS5683078A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16312279A JPS5683078A (en) 1979-12-11 1979-12-11 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16312279A JPS5683078A (en) 1979-12-11 1979-12-11 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5683078A true JPS5683078A (en) 1981-07-07

Family

ID=15767590

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16312279A Pending JPS5683078A (en) 1979-12-11 1979-12-11 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5683078A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6237943A (en) * 1985-08-12 1987-02-18 Matsushita Electronics Corp Manufacture of semiconductor device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5286083A (en) * 1976-01-12 1977-07-16 Hitachi Ltd Production of complimentary isolation gate field effect transistor
JPS5331979A (en) * 1976-09-06 1978-03-25 Nec Corp Insulated gate type field effect semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5286083A (en) * 1976-01-12 1977-07-16 Hitachi Ltd Production of complimentary isolation gate field effect transistor
JPS5331979A (en) * 1976-09-06 1978-03-25 Nec Corp Insulated gate type field effect semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6237943A (en) * 1985-08-12 1987-02-18 Matsushita Electronics Corp Manufacture of semiconductor device

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