JPS5327375A - Production of semiconductor device - Google Patents

Production of semiconductor device

Info

Publication number
JPS5327375A
JPS5327375A JP10231476A JP10231476A JPS5327375A JP S5327375 A JPS5327375 A JP S5327375A JP 10231476 A JP10231476 A JP 10231476A JP 10231476 A JP10231476 A JP 10231476A JP S5327375 A JPS5327375 A JP S5327375A
Authority
JP
Japan
Prior art keywords
production
semiconductor device
impurity
injecting
changing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10231476A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5436077B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html
Inventor
Kazunari Shirai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP10231476A priority Critical patent/JPS5327375A/ja
Publication of JPS5327375A publication Critical patent/JPS5327375A/ja
Publication of JPS5436077B2 publication Critical patent/JPS5436077B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76Making of isolation regions between components
    • H01L21/762Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76202Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
    • H01L21/76213Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO introducing electrical inactive or active impurities in the local oxidation region, e.g. to alter LOCOS oxide growth characteristics or for additional isolation purpose
    • H01L21/76216Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO introducing electrical inactive or active impurities in the local oxidation region, e.g. to alter LOCOS oxide growth characteristics or for additional isolation purpose introducing electrical active impurities in the local oxidation region for the sole purpose of creating channel stoppers

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Element Separation (AREA)
JP10231476A 1976-08-26 1976-08-26 Production of semiconductor device Granted JPS5327375A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10231476A JPS5327375A (en) 1976-08-26 1976-08-26 Production of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10231476A JPS5327375A (en) 1976-08-26 1976-08-26 Production of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5327375A true JPS5327375A (en) 1978-03-14
JPS5436077B2 JPS5436077B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1979-11-07

Family

ID=14324122

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10231476A Granted JPS5327375A (en) 1976-08-26 1976-08-26 Production of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5327375A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2496983A1 (fr) * 1980-12-23 1982-06-25 Philips Nv Procede de fabrication par auto-alignement d'un dispositif semiconducteur comportant un igfet de dimension tres faible
JPS5843563A (ja) * 1981-08-27 1983-03-14 シ−メンス・アクチエンゲゼルシヤフト 高度集積cmos電界効果トランジスタ回路の製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2496983A1 (fr) * 1980-12-23 1982-06-25 Philips Nv Procede de fabrication par auto-alignement d'un dispositif semiconducteur comportant un igfet de dimension tres faible
JPS5843563A (ja) * 1981-08-27 1983-03-14 シ−メンス・アクチエンゲゼルシヤフト 高度集積cmos電界効果トランジスタ回路の製造方法

Also Published As

Publication number Publication date
JPS5436077B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1979-11-07

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