JPS5436077B2 - - Google Patents

Info

Publication number
JPS5436077B2
JPS5436077B2 JP10231476A JP10231476A JPS5436077B2 JP S5436077 B2 JPS5436077 B2 JP S5436077B2 JP 10231476 A JP10231476 A JP 10231476A JP 10231476 A JP10231476 A JP 10231476A JP S5436077 B2 JPS5436077 B2 JP S5436077B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP10231476A
Other languages
Japanese (ja)
Other versions
JPS5327375A (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP10231476A priority Critical patent/JPS5327375A/ja
Publication of JPS5327375A publication Critical patent/JPS5327375A/ja
Publication of JPS5436077B2 publication Critical patent/JPS5436077B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76Making of isolation regions between components
    • H01L21/762Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76202Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
    • H01L21/76213Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO introducing electrical inactive or active impurities in the local oxidation region, e.g. to alter LOCOS oxide growth characteristics or for additional isolation purpose
    • H01L21/76216Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO introducing electrical inactive or active impurities in the local oxidation region, e.g. to alter LOCOS oxide growth characteristics or for additional isolation purpose introducing electrical active impurities in the local oxidation region for the sole purpose of creating channel stoppers

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Element Separation (AREA)
JP10231476A 1976-08-26 1976-08-26 Production of semiconductor device Granted JPS5327375A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10231476A JPS5327375A (en) 1976-08-26 1976-08-26 Production of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10231476A JPS5327375A (en) 1976-08-26 1976-08-26 Production of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5327375A JPS5327375A (en) 1978-03-14
JPS5436077B2 true JPS5436077B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1979-11-07

Family

ID=14324122

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10231476A Granted JPS5327375A (en) 1976-08-26 1976-08-26 Production of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5327375A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL187328C (nl) * 1980-12-23 1991-08-16 Philips Nv Werkwijze ter vervaardiging van een halfgeleiderinrichting.
DE3133841A1 (de) * 1981-08-27 1983-03-17 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen von hochintegrierten komplementaeren mos-feldeffekttransistorschaltungen

Also Published As

Publication number Publication date
JPS5327375A (en) 1978-03-14

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