JPS5436077B2 - - Google Patents
Info
- Publication number
- JPS5436077B2 JPS5436077B2 JP10231476A JP10231476A JPS5436077B2 JP S5436077 B2 JPS5436077 B2 JP S5436077B2 JP 10231476 A JP10231476 A JP 10231476A JP 10231476 A JP10231476 A JP 10231476A JP S5436077 B2 JPS5436077 B2 JP S5436077B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
- H01L21/76213—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO introducing electrical inactive or active impurities in the local oxidation region, e.g. to alter LOCOS oxide growth characteristics or for additional isolation purpose
- H01L21/76216—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO introducing electrical inactive or active impurities in the local oxidation region, e.g. to alter LOCOS oxide growth characteristics or for additional isolation purpose introducing electrical active impurities in the local oxidation region for the sole purpose of creating channel stoppers
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Element Separation (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10231476A JPS5327375A (en) | 1976-08-26 | 1976-08-26 | Production of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10231476A JPS5327375A (en) | 1976-08-26 | 1976-08-26 | Production of semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5327375A JPS5327375A (en) | 1978-03-14 |
JPS5436077B2 true JPS5436077B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1979-11-07 |
Family
ID=14324122
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10231476A Granted JPS5327375A (en) | 1976-08-26 | 1976-08-26 | Production of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5327375A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL187328C (nl) * | 1980-12-23 | 1991-08-16 | Philips Nv | Werkwijze ter vervaardiging van een halfgeleiderinrichting. |
DE3133841A1 (de) * | 1981-08-27 | 1983-03-17 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum herstellen von hochintegrierten komplementaeren mos-feldeffekttransistorschaltungen |
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1976
- 1976-08-26 JP JP10231476A patent/JPS5327375A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS5327375A (en) | 1978-03-14 |