JPS5317069A - Semiconductor device and its production - Google Patents

Semiconductor device and its production

Info

Publication number
JPS5317069A
JPS5317069A JP9152876A JP9152876A JPS5317069A JP S5317069 A JPS5317069 A JP S5317069A JP 9152876 A JP9152876 A JP 9152876A JP 9152876 A JP9152876 A JP 9152876A JP S5317069 A JPS5317069 A JP S5317069A
Authority
JP
Japan
Prior art keywords
semiconductor device
production
single crystal
wapage
wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9152876A
Other languages
English (en)
Other versions
JPS5538044B2 (ja
Inventor
Masaru Ihara
Masayuki Chifuku
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP9152876A priority Critical patent/JPS5317069A/ja
Publication of JPS5317069A publication Critical patent/JPS5317069A/ja
Priority to US06/095,783 priority patent/US4282543A/en
Publication of JPS5538044B2 publication Critical patent/JPS5538044B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
    • H01L21/86—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body the insulating body being sapphire, e.g. silicon on sapphire structure, i.e. SOS
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
    • H01L23/147—Semiconductor insulating substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/003—Anneal
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/043—Dual dielectric
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/118—Oxide films
JP9152876A 1976-07-30 1976-07-30 Semiconductor device and its production Granted JPS5317069A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP9152876A JPS5317069A (en) 1976-07-30 1976-07-30 Semiconductor device and its production
US06/095,783 US4282543A (en) 1976-07-30 1979-11-19 Semiconductor substrate and method for the preparation of the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9152876A JPS5317069A (en) 1976-07-30 1976-07-30 Semiconductor device and its production

Publications (2)

Publication Number Publication Date
JPS5317069A true JPS5317069A (en) 1978-02-16
JPS5538044B2 JPS5538044B2 (ja) 1980-10-02

Family

ID=14028923

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9152876A Granted JPS5317069A (en) 1976-07-30 1976-07-30 Semiconductor device and its production

Country Status (2)

Country Link
US (1) US4282543A (ja)
JP (1) JPS5317069A (ja)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS586147A (ja) * 1981-07-03 1983-01-13 Nec Corp 半導体装置及びその製造方法
JPS59110112A (ja) * 1982-12-16 1984-06-26 Nec Corp 半導体基体の製造方法
JPS629642A (ja) * 1985-07-05 1987-01-17 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
US4972702A (en) * 1988-09-02 1990-11-27 Aisan Kogyo Kabushiki Kaisha Intake air quantity measuring apparatus

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4651185A (en) * 1983-08-15 1987-03-17 Alphasil, Inc. Method of manufacturing thin film transistors and transistors made thereby
US4545112A (en) * 1983-08-15 1985-10-08 Alphasil Incorporated Method of manufacturing thin film transistors and transistors made thereby
US5162892A (en) * 1983-12-24 1992-11-10 Sony Corporation Semiconductor device with polycrystalline silicon active region and hydrogenated passivation layer
DE3587100T2 (de) * 1984-10-09 1993-09-09 Fujitsu Ltd Verfahren zur herstellung einer auf der halbleiter-auf-isolator-technologie basierenden integrierten schaltung.
US5107312A (en) * 1989-09-11 1992-04-21 Harris Corporation Method of isolating a top gate of a MESFET and the resulting device
EP0457596B1 (en) * 1990-05-17 1995-12-06 Sharp Kabushiki Kaisha Process for fabricating a thin film transistor
US6964890B1 (en) 1992-03-17 2005-11-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for forming the same
CN1196184C (zh) * 1992-07-06 2005-04-06 株式会社半导体能源研究所 半导体器件及其形成方法
JP2908150B2 (ja) * 1992-11-27 1999-06-21 日本電気株式会社 Ｓｏｉ基板構造及びその製造方法
US5659192A (en) * 1993-06-30 1997-08-19 Honeywell Inc. SOI substrate fabrication
JPH08286212A (ja) * 1995-04-14 1996-11-01 Semiconductor Energy Lab Co Ltd 表示装置の作製方法
JP3410957B2 (ja) * 1998-03-19 2003-05-26 株式会社東芝 半導体装置及びその製造方法
DE19830449A1 (de) * 1998-07-08 2000-01-27 Zeiss Carl Fa SiO¶2¶-beschichtetes Spiegelsubstrat für EUV
US6995430B2 (en) * 2002-06-07 2006-02-07 Amberwave Systems Corporation Strained-semiconductor-on-insulator device structures
US20030227057A1 (en) 2002-06-07 2003-12-11 Lochtefeld Anthony J. Strained-semiconductor-on-insulator device structures
US7074623B2 (en) * 2002-06-07 2006-07-11 Amberwave Systems Corporation Methods of forming strained-semiconductor-on-insulator finFET device structures
US7161169B2 (en) * 2004-01-07 2007-01-09 International Business Machines Corporation Enhancement of electron and hole mobilities in <110> Si under biaxial compressive strain

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3393088A (en) * 1964-07-01 1968-07-16 North American Rockwell Epitaxial deposition of silicon on alpha-aluminum
NL158024B (nl) * 1967-05-13 1978-09-15 Philips Nv Werkwijze ter vervaardiging van een halfgeleiderinrichting en halfgeleiderinrichting verkregen door toepassing van de werkwijze.
US3695956A (en) * 1970-05-25 1972-10-03 Rca Corp Method for forming isolated semiconductor devices
US3749614A (en) * 1970-09-14 1973-07-31 Rca Corp Fabrication of semiconductor devices
US3922705A (en) * 1973-06-04 1975-11-25 Gen Electric Dielectrically isolated integral silicon diaphram or other semiconductor product
US4050979A (en) * 1973-12-28 1977-09-27 Texas Instruments Incorporated Process for thinning silicon with special application to producing silicon on insulator
US3997381A (en) * 1975-01-10 1976-12-14 Intel Corporation Method of manufacture of an epitaxial semiconductor layer on an insulating substrate

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS586147A (ja) * 1981-07-03 1983-01-13 Nec Corp 半導体装置及びその製造方法
JPS59110112A (ja) * 1982-12-16 1984-06-26 Nec Corp 半導体基体の製造方法
JPH0454966B2 (ja) * 1982-12-16 1992-09-01 Nippon Electric Co
JPS629642A (ja) * 1985-07-05 1987-01-17 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
JPH0357618B2 (ja) * 1985-07-05 1991-09-02 Matsushita Electric Ind Co Ltd
US4972702A (en) * 1988-09-02 1990-11-27 Aisan Kogyo Kabushiki Kaisha Intake air quantity measuring apparatus

Also Published As

Publication number Publication date
US4282543A (en) 1981-08-04
JPS5538044B2 (ja) 1980-10-02

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