JPS6484672A - Photoelectric conversion device - Google Patents

Photoelectric conversion device

Info

Publication number
JPS6484672A
JPS6484672A JP62240846A JP24084687A JPS6484672A JP S6484672 A JPS6484672 A JP S6484672A JP 62240846 A JP62240846 A JP 62240846A JP 24084687 A JP24084687 A JP 24084687A JP S6484672 A JPS6484672 A JP S6484672A
Authority
JP
Japan
Prior art keywords
film
silicon film
deposited
band gap
crystallite
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62240846A
Other languages
Japanese (ja)
Inventor
Hisanori Ihara
Yoshiyuki Suda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP62240846A priority Critical patent/JPS6484672A/en
Publication of JPS6484672A publication Critical patent/JPS6484672A/en
Pending legal-status Critical Current

Links

Classifications

    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Photovoltaic Devices (AREA)

Abstract

PURPOSE:To improve the responsibility of the device to light by providing a first semiconductor film which demonstrates a photoelectric effect, having a band gap greater than that of a second semiconductor material exhibiting the mobilities of electrons and holes than those of the former. CONSTITUTION:A tungstene film is deposited on a glass substrate 7 and etched to form a planar electrode 8. A fine crystal silicon film 9 is deposited on the electrode 8. The crystallite silicon film 9 is oxidized to form a thin silicon oxide film 10. An amorphous silicon film 11 is deposited on the thin silicon oxide film 10. Here, a band gap of the amorphous silicon film is made greater than that of the crystallite silicon film 9.
JP62240846A 1987-09-28 1987-09-28 Photoelectric conversion device Pending JPS6484672A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62240846A JPS6484672A (en) 1987-09-28 1987-09-28 Photoelectric conversion device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62240846A JPS6484672A (en) 1987-09-28 1987-09-28 Photoelectric conversion device

Publications (1)

Publication Number Publication Date
JPS6484672A true JPS6484672A (en) 1989-03-29

Family

ID=17065577

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62240846A Pending JPS6484672A (en) 1987-09-28 1987-09-28 Photoelectric conversion device

Country Status (1)

Country Link
JP (1) JPS6484672A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04226084A (en) * 1990-05-23 1992-08-14 Mitsubishi Electric Corp Solar cell and its manufacture
WO2007074683A1 (en) * 2005-12-26 2007-07-05 Kaneka Corporation Stacked photoelectric transducer
JP2014027001A (en) * 2012-07-24 2014-02-06 Toyota Gakuen Photoelectric conversion element

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59138372A (en) * 1983-01-27 1984-08-08 Canon Inc Photo sensor
JPS6042877A (en) * 1983-08-17 1985-03-07 Mitsubishi Electric Corp Photo receiving element
JPS60239072A (en) * 1984-05-11 1985-11-27 Ricoh Co Ltd Photosensor
JPS617670A (en) * 1984-06-22 1986-01-14 Ricoh Co Ltd Photoelectric conversion film
JPS6184859A (en) * 1984-10-02 1986-04-30 Matsushita Electric Ind Co Ltd Photodetector

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59138372A (en) * 1983-01-27 1984-08-08 Canon Inc Photo sensor
JPS6042877A (en) * 1983-08-17 1985-03-07 Mitsubishi Electric Corp Photo receiving element
JPS60239072A (en) * 1984-05-11 1985-11-27 Ricoh Co Ltd Photosensor
JPS617670A (en) * 1984-06-22 1986-01-14 Ricoh Co Ltd Photoelectric conversion film
JPS6184859A (en) * 1984-10-02 1986-04-30 Matsushita Electric Ind Co Ltd Photodetector

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04226084A (en) * 1990-05-23 1992-08-14 Mitsubishi Electric Corp Solar cell and its manufacture
WO2007074683A1 (en) * 2005-12-26 2007-07-05 Kaneka Corporation Stacked photoelectric transducer
US7851695B2 (en) 2005-12-26 2010-12-14 Kaneka Corporation Stacked-type photoelectric conversion device
JP2014027001A (en) * 2012-07-24 2014-02-06 Toyota Gakuen Photoelectric conversion element

Similar Documents

Publication Publication Date Title
JPS55120182A (en) Photoelectric converter
EP0236123A3 (en) A semiconductor device and method for preparing the same
JPS56125868A (en) Thin-film semiconductor device
IE802615L (en) Thin film transistor
GB2106419A (en) Growth of structures based on group iv semiconductor materials
JPS6484672A (en) Photoelectric conversion device
CA2051778A1 (en) Method for manufacturing superconducting device having a reduced thickness of oxide superconducting layer and superconducting device manufactured thereby
JPS55105361A (en) Semiconductor device
JPS5717145A (en) Semiconductor device and manufacture therefor
JPS5769778A (en) Semiconductor device
JPS56148874A (en) Semiconductor photoelectric converter
JPS5660061A (en) Semiconductor device
JPS572519A (en) Manufacture of semiconductor device
JPS56104474A (en) Silicon semiconductor device
JPS53129981A (en) Production of semiconductor device
JPS538076A (en) Production of mis semiconductor device
JPS5670530A (en) Liquid crystal panel
JPS52124860A (en) Electrode formation method for semiconductor devices
JPS57134960A (en) Semiconductor device
JPS53145485A (en) Production of semiconductor device having serrations on semiconductor surface
JPS52139377A (en) Production of semiconductor device
JPS53143183A (en) Semicondutor integrated circuit device and production of the same
JPS57177570A (en) Junction type field effect transistor
JPS52130575A (en) Semiconductor device and its preparation
JPS5742144A (en) Manufacture of semiconductor device