JPS53143177A - Production of field effect transistor - Google Patents

Production of field effect transistor

Info

Publication number
JPS53143177A
JPS53143177A JP5772377A JP5772377A JPS53143177A JP S53143177 A JPS53143177 A JP S53143177A JP 5772377 A JP5772377 A JP 5772377A JP 5772377 A JP5772377 A JP 5772377A JP S53143177 A JPS53143177 A JP S53143177A
Authority
JP
Japan
Prior art keywords
production
field effect
effect transistor
formation
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5772377A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6160591B2 (enrdf_load_stackoverflow
Inventor
Susumu Takahashi
Seiji Ikeda
Hiroshi Kodera
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP5772377A priority Critical patent/JPS53143177A/ja
Publication of JPS53143177A publication Critical patent/JPS53143177A/ja
Publication of JPS6160591B2 publication Critical patent/JPS6160591B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
JP5772377A 1977-05-20 1977-05-20 Production of field effect transistor Granted JPS53143177A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5772377A JPS53143177A (en) 1977-05-20 1977-05-20 Production of field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5772377A JPS53143177A (en) 1977-05-20 1977-05-20 Production of field effect transistor

Publications (2)

Publication Number Publication Date
JPS53143177A true JPS53143177A (en) 1978-12-13
JPS6160591B2 JPS6160591B2 (enrdf_load_stackoverflow) 1986-12-22

Family

ID=13063852

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5772377A Granted JPS53143177A (en) 1977-05-20 1977-05-20 Production of field effect transistor

Country Status (1)

Country Link
JP (1) JPS53143177A (enrdf_load_stackoverflow)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57177572A (en) * 1981-04-24 1982-11-01 Sumitomo Electric Ind Ltd Field effect transistor and manufacture thereof
JPS5827373A (ja) * 1981-08-11 1983-02-18 Nippon Telegr & Teleph Corp <Ntt> 電界効果トランジスタの製法
JPS5834980A (ja) * 1981-08-25 1983-03-01 Sumitomo Electric Ind Ltd シヨツトキゲ−ト電界効果トランジスタ
JPS61295668A (ja) * 1985-06-25 1986-12-26 Toshiba Corp ＧａＡｓ半導体装置の製造方法
JPS6240781A (ja) * 1985-08-15 1987-02-21 Toshiba Corp シヨツトキ−ゲ−ト型電界効果トランジスタの製造方法

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57177572A (en) * 1981-04-24 1982-11-01 Sumitomo Electric Ind Ltd Field effect transistor and manufacture thereof
JPS5827373A (ja) * 1981-08-11 1983-02-18 Nippon Telegr & Teleph Corp <Ntt> 電界効果トランジスタの製法
JPS5834980A (ja) * 1981-08-25 1983-03-01 Sumitomo Electric Ind Ltd シヨツトキゲ−ト電界効果トランジスタ
JPS61295668A (ja) * 1985-06-25 1986-12-26 Toshiba Corp ＧａＡｓ半導体装置の製造方法
JPS6240781A (ja) * 1985-08-15 1987-02-21 Toshiba Corp シヨツトキ−ゲ−ト型電界効果トランジスタの製造方法

Also Published As

Publication number Publication date
JPS6160591B2 (enrdf_load_stackoverflow) 1986-12-22

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